MRF6S23140HR3 vs MRF6S27085HR5 比較

詳細並排比較 MRF6S23140HR3 由 NXP Semiconductors 與 MRF6S27085HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF6S23140HR3 MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 - 28W, 2.3GHz RF Power LDMOS | NXP Semiconductors

MRF6S23140HR3 ✓ 啟用中
NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 啟用中

規格比較

參數 MRF6S23140HR3 MRF6S27085HR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 LDMOS, N-Channel Enhancement-Mode LDMOS, N-Channel RF Power
Technology Lateral N-Channel RF Power MOSFET HV6 LDMOS
Drain-Source Voltage (Rated) 68 V —
Operating Drain Voltage (Typical) 28 V —
Test Quiescent Drain Current 1.3 A —
Operating Frequency Range 2300 MHz to 2400 MHz 2500 MHz to 2700 MHz
Test Frequency 2.39 GHz 2660 MHz
Output Power (Average, 2 x W-CDMA) 28 W —
Power Gain 15.2 dB —
Drain Efficiency [DATA_NEEDED: drain efficiency %] —
封裝 / 外殼 NI-880H-2L (CASE 465B-03, STYLE 1) NI-780H-2L (ceramic acorn)
安裝類型 Chassis / Flange Mount Chassis / Flange Mount
Configuration Single, push-pull capable —
Input Matching Internally matched (per datasheet) —
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant (per distributor listing)
Lead-Free [DATA_NEEDED: lead-free status] —
Rated Drain-Source Voltage (Vdss) — 68 V
Test Supply Voltage (Vdd) — 28 V
Test Quiescent Current (Idq) — 900 mA
Output Power (Pout) — 20 W (CW)
Small-Signal Gain — 15.5 dB at 2.66 GHz
腳位數 — 2-lead + flange
Lead Free Status — Lead-free (per distributor listing)
Peak Reflow Temperature — 260 C
Time at Peak Reflow — 40 s maximum
Application — W-CDMA / multi-carrier base-station PA

資料表與資源

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