MRF8S18120HSR3 vs MRF8S21120HSR3 比較
詳細並排比較 MRF8S18120HSR3 由 NXP Semiconductors 與 MRF8S21120HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF8S18120HSR3 | MRF8S21120HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S18120HSR3 | MRF8S21120HSR3 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Test Drain Voltage | 28 V | — |
| Test Quiescent Current (IDQ) | 800 mA | — |
| Operating Frequency | 1805 MHz to 1880 MHz | — |
| Center Frequency | 1.81 GHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (Typ) | 18.2 dB | — |
| Drain Current (Test) | 800 mA | — |
| Package Type | NI-780S | NI-780HS (ceramic flange) |
| 安裝方式 | Surface Mount (ceramic flange) | Through-hole / bolt-down flange |
| Operating Class | Class AB / Class C | — |
| Application | GSM / GSM EDGE cellular base station power amplifiers | — |
| RoHS 狀態 | Compliant | RoHS compliant |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | — | 2110-2170 MHz |
| Output Power (P1dB / average) | — | 28 W average, W-CDMA / LTE |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 65 V |
| Operating Drain Voltage | — | 28 V |
| Power Gain (Typical) | — | 17.6 dB at 2.17 GHz |
| Drain Efficiency (Typical) | — | [DATA_NEEDED: datasheet efficiency figure] |
| Operating Mode | — | Class AB / Class C |
| Case Mounting | — | Source on case (flange grounding) |
| 腳位數 | — | 2-pin (Gate, Drain) |
| MSL 等級 | — | 1 (unlimited) |
| Lead-Free | — | Yes |