MRF8S18120HSR3 vs MRF8S21120HSR3 مقایسه
مقایسه دقیق کنار به کنار MRF8S18120HSR3 توسط NXP Semiconductors و MRF8S21120HSR3 توسط NXP Semiconductors. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
NXP Semiconductors
MRF8S18120HSR3 - 72W, 1.81GHz RF LDMOS | NXP | Cellular BTS
MRF8S18120HSR3 ✓ فعال
مقایسه مشخصات
| پارامتر | MRF8S18120HSR3 | MRF8S21120HSR3 |
|---|---|---|
| برند | NXP Semiconductors | NXP Semiconductors |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF8S18120HSR3 | MRF8S21120HSR3 |
| نوع ترانزیستور | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Test Drain Voltage | 28 V | — |
| Test Quiescent Current (IDQ) | 800 mA | — |
| Operating Frequency | 1805 MHz to 1880 MHz | — |
| Center Frequency | 1.81 GHz | — |
| Output Power (CW) | 72 W | — |
| Power Gain (Typ) | 18.2 dB | — |
| Drain Current (Test) | 800 mA | — |
| Package Type | NI-780S | NI-780HS (ceramic flange) |
| سبک نصب | Surface Mount (ceramic flange) | Through-hole / bolt-down flange |
| Operating Class | Class AB / Class C | — |
| Application | GSM / GSM EDGE cellular base station power amplifiers | — |
| وضعیت RoHS | Compliant | RoHS compliant |
| Device Type | — | N-Channel Enhancement-Mode Lateral RF Power MOSFET |
| Frequency Range | — | 2110-2170 MHz |
| Output Power (P1dB / average) | — | 28 W average, W-CDMA / LTE |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 65 V |
| Operating Drain Voltage | — | 28 V |
| Power Gain (Typical) | — | 17.6 dB at 2.17 GHz |
| Drain Efficiency (Typical) | — | [DATA_NEEDED: datasheet efficiency figure] |
| Operating Mode | — | Class AB / Class C |
| Case Mounting | — | Source on case (flange grounding) |
| تعداد پین‌ها | — | 2-pin (Gate, Drain) |
| سطح MSL | — | 1 (unlimited) |
| Lead-Free | — | Yes |