MRF8S19260HR6 vs MRF8S19260HSR6 比較
詳細並排比較 MRF8S19260HR6 由 NXP Semiconductors 與 MRF8S19260HSR6 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF8S19260HR6 | MRF8S19260HSR6 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | LDMOS, N-Channel, Dual |
| Technology | Laterally Diffused Metal-Oxide Semiconductor (LDMOS) | — |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.96 GHz (1960 MHz) | 1.99 GHz |
| Drain-Source Voltage (V(BR)DSS) Rated | 65 V | — |
| Operating Drain Voltage (Test) | 30 V | — |
| Test Bias Current | 1.6 A | — |
| Average Output Power (Pout) | 74 W | — |
| Power Gain (Gp) | 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A | — |
| Drain Efficiency | [DATA_NEEDED: typical % at rated conditions] | — |
| Application Class | Class AB or Class C | — |
| Modulation Support | CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE | — |
| 封裝 | NI-1230-8 (ceramic bolt-down, 2-lead flange) | — |
| 安裝類型 | Chassis / heatsink mount (bolt-down flange) | Chassis / Flange Mount (through-hole RF bolt-down) |
| Lead-Free Status | Yes | — |
| RoHS 狀態 | [DATA_NEEDED: confirm from NXP product page] | Compliant |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF8S19260HSR6 |
| Frequency Band | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (Max Rated) | — | 65 V |
| Operating Drain Voltage (Typical) | — | 30 V |
| Continuous Drain Current (Test) | — | 1.6 A |
| Output Power (CW / Avg) | — | 74 W average |
| Power Gain | — | 18.2 dB at 1.99 GHz |
| 封裝 / 外殼 | — | NI-1230S-8 (ceramic air-cavity bolt-down) |
| Lead Free Status | — | Compliant (per DigiKey listing) |
| Operating Mode | — | Class AB and Class C capable |
| Application | — | W-CDMA, CDMA, multi-carrier cellular base station PA |