MT40A1G8SA-062E vs K4A8G085WB-BCTD 比較
詳細並排比較 MT40A1G8SA-062E 由 Micron Technology 與 K4A8G085WB-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A1G8SA-062E | K4A8G085WB-BCTD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $8.53 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| 組織 | 1G x 8 | 1G x 8 |
| 資料速率 | 3200 MT/s (DDR4-3200) | 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Access Time (CAS Latency) | CL22 at 3200 MT/s | — |
| Row Access Time | 19 ns | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV, +250 mV | — |
| Internal Banks | 16 banks (4 bank groups x 4 banks) | — |
| Refresh | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) | — |
| 工作溫度 | 0C to +95C (CT range; IT: -40C to +95C) | [DATA_NEEDED: operating temperature range] |
| I/O Type | 1.2 V pseudo open-drain | — |
| Burst Length | BL8, BC4 (burst chop) | BL8 |
| 封裝 | 78-ball FBGA (7.5 x 11 mm) | FBGA-78 (78-ball TFBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 功能特色 | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ | ZQ calibration, CRC, CA parity, asynchronous reset |
| 供應電壓 | — | 1.2 V |
| Die Revision | — | B-die |
| Bank Structure | — | 16 banks, 4 bank groups |
| Termination | — | On-Die Termination (ODT), dynamic ODT |
| Speed Bin | — | -BCTD (CL-tRCD-tRP bin) |
| Terminations | — | 78 |
| JEDEC-30 Package Code | — | R-PBGA-B78 |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS status] |