MT40A512M16JY-083E vs K4A4G165WG-BCWE 比較
詳細並排比較 MT40A512M16JY-083E 由 Micron Technology 與 K4A4G165WG-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ 啟用中
規格比較
| 參數 | MT40A512M16JY-083E | K4A4G165WG-BCWE |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $16.90 |
| 記憶體類型 | DDR4 SDRAM (Automotive) | DDR4 SDRAM (volatile DRAM) |
| Density | 8 Gbit | — |
| 組織 | 512M x 16 | — |
| Clock Frequency | 1.2 GHz (tCK = 0.83 ns) | [DATA_NEEDED: clock frequency / tCK range] |
| 資料速率 | 2400 MT/s (speed grade -083E) | 3200 Mbps |
| VDD Supply Voltage | 1.2 V +/- 60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/- 60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV, +250 mV | — |
| I/O Interface | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal adjustable generation | — |
| Refresh Structure | 8192-cycle refresh | — |
| Refresh Window | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C | — |
| 封裝 | 96-FBGA (8 x 14 mm) | FBGA-96 |
| 安裝類型 | Surface Mount | Surface Mount |
| ECCN | EAR99 | — |
| 無鹵素 | Compliant | — |
| Country of Origin | China | — |
| 記憶體容量 | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| 介面 | — | Parallel |
| Access Time | — | 19 ns |
| 供應電壓 | — | 1.2 V |
| 工作溫度 | — | 0C to +85C |
| Memory Format | — | DRAM |
| Technology | — | DDR4 |
| Product Status | — | Active |
| RoHS 狀態 | — | Compliant (per JLCPCB listing) |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh interval] |