MT40A512M16LY-075:E vs MT40A512M16TB-062E 比較
詳細並排比較 MT40A512M16LY-075:E 由 Micron Technology 與 MT40A512M16TB-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A512M16LY-075:E | MT40A512M16TB-062E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $60.00 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit (512M x 16) | 8 Gbit |
| 資料速率 | 2666 MT/s | 1600 MHz (DDR4-3200) |
| Clock Frequency | 1.33 GHz | — |
| CAS 延遲 | 19 | — |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply | 2.5V (-125mV, +250mV) | — |
| 介面 | Parallel | Parallel |
| 封裝 | 96-FBGA (7.5x13.5mm) | 96-FBGA (7.5x13 mm) |
| 工作溫度範圍 | 0°C to +95°C | 0°C to +95°C (standard), -40°C to +95°C (IT) |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Internal Banks (x16) | 8 banks (4 groups of 2) | — |
| I/O Type | 1.2V pseudo open-drain | — |
| RoHS | Compliant | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 組織 | — | 512M x 16 |
| Supply Voltage - VDD/VDDQ | — | 1.2V ±60mV |
| Supply Voltage - VPP | — | 2.5V, -125mV, +250mV |
| tRCD | — | 19 ns |
| 功能特色 | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| RoHS 狀態 | — | Compliant |
| REACH Status | — | Compliant |