MT53E2G64D8TN-046 vs H58G66CK8BX147N 比較
詳細並排比較 MT53E2G64D8TN-046 由 Micron Technology 與 H58G66CK8BX147N 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT53E2G64D8TN-046 - 128Gbit LPDDR4X SDRAM 556-Ball | Micron
MT53E2G64D8TN-046 ✓ 啟用中
規格比較
| 參數 | MT53E2G64D8TN-046 | H58G66CK8BX147N |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Mobile LPDDR4X SDRAM | LPDDR5X SDRAM |
| 記憶體容量 | 128 Gbit (16 GB) | — |
| 組織 | 2G x 64 | x8 (single channel) |
| 介面 | Parallel | LPDDR5/LPDDR5X protocol |
| Clock Frequency | 2.133 GHz | — |
| Access Time | 3.5 ns | — |
| Speed Grade | -046 (4266 Mbps/pin) | — |
| Supply Voltage (VDD) | 1.1 V / 1.8 V (per variant) | — |
| 封裝 | 556-ball LFBGA (12.4 mm x 12.4 mm) | 315-ball FBGA |
| Ball Pitch | [DATA_NEEDED: ball pitch] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Temperature (AAT:C) | 0C to +95C | — |
| Operating Temperature (AIT:C) | -40C to +95C | — |
| Operating Temperature (AUT:C) | -40C to +105C | — |
| Automotive Qualification (AUT variant) | AEC-Q100 qualified | — |
| 資料匯流排寬度 | 64 bit | — |
| Write Cycle Time | 18 ns | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Density | — | 64 Gbit (8 GB) |
| Maximum Data Rate | — | 8533 Mbps |
| Supply Voltage Domain | — | 0.5 V to 1.8 V |
| Core Voltage Class | — | 1.05 V (LPDDR5/LPDDR5X class) |
| Standard Compliance | — | JEDEC-compliant single-channel SDRAM (per SK hynix 315-ball FBGA specification) |
| Channel Configuration | — | Single channel (x8 or x16 capable family) |
| Power Management | — | Dynamic voltage and frequency scaling (DVFSC/DVFSQ) |
| Application Domain | — | Smartphone, AI edge, server-class mobile computing |
| 工作溫度 | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh Scheme | — | LPDDR5 per-bank / all-bank refresh |