MW4IC001NR4 vs MW4IC001MR4 比較

詳細並排比較 MW4IC001NR4 由 NXP Semiconductors 與 MW4IC001MR4 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MW4IC001NR4 MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP

MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP

MW4IC001NR4 ⚠ 最後購買機會
NXP Semiconductors
MW4IC001MR4 MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP

MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP

MW4IC001MR4 ⚠ 最後購買機會

規格比較

參數 MW4IC001NR4 MW4IC001MR4
品牌 NXP Semiconductors NXP Semiconductors
類別 RF Amplifiers RF Amplifiers
生命週期狀態 最後購買 最後購買
Manufacturer NXP Semiconductors (originally Freescale Semiconductor) —
Part Number MW4IC001NR4 —
RF Type Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA —
功能 Wideband integrated power amplifier / APD feedback amplifier —
Frequency Range 800 MHz to 2170 MHz 800 MHz to 2170 MHz
Gain (small-signal) 13 dB —
Output Power (P1dB) 900 mW (approx. 29.5 dBm) —
供應電壓 26 V (typ.) / 28 V (rated) —
Supply Current (quiescent) 12 mA (typ.) —
Technology RF LDMOS (Laterally Diffused MOSFET) LDMOS (Laterally Diffused MOS)
Input / Output Impedance Internally matched to 50 ohm 50 ohm (nominal)
封裝 / 外殼 PLD-1.5 (over-molded plastic flange-mount) —
Packaging Tape & Reel (R4 suffix = 500 pcs/reel standard) —
工作溫度 -40 C to +85 C ambient —
Termination Finish Lead-free (matte tin) —
RoHS 狀態 Compliant (N-suffix = lead-free transition marking) Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free)
Output Power (CW, P1dB typical) — 900 mW (29.5 dBm)
Power Gain at 2170 MHz — 13 dB
Drain Efficiency at 2170 MHz — 38 %
Drain Supply Voltage (VDD) — 28 V (typ)
Quiescent Current (IDQ) — 12 mA
Supported Air Interfaces — GSM, TDMA, CDMA, EDGE, W-CDMA
Operating Case Temperature — -40C to +85C
封裝 — PLD-1.5 (RF1649-4, over-molded plastic)
安裝類型 — Surface Mount
Terminal Finish — Tin/Lead (Sn/Pb)
Application Role — Analog predistortion (DPD) reference amplifier

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