NT5CC256M16DP-DI vs H5TC4G63MFR-PBA 比較
詳細並排比較 NT5CC256M16DP-DI 由 Nanya Technology 與 H5TC4G63MFR-PBA 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT5CC256M16DP-DI | H5TC4G63MFR-PBA |
|---|---|---|
| 品牌 | Nanya Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| 組織 | 256M x 16 | 256M x 16 |
| 供應電壓 | 1.35V | — |
| 資料速率 | 1600 Mbps/pin (800MHz) | 1866 Mbps (PC3L-14900) |
| 封裝 | VFBGA-96 | 96-ball FBGA |
| 工作溫度範圍 | -40°C to +95°C (industrial) | — |
| CAS 延遲 | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | BL8, BL4 (with burst chop) |
| Number of Banks | 8 | 8 |
| 介面 | Differential clock (CK, CK#) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V (+0.100V/-0.067V) |
| CAS Latency (CL) | — | Programmable |
| CAS Write Latency (CWL) | — | Programmable |
| Additive Latency | — | Programmable |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Temperature-Compensated Self-Refresh | — | Yes |
| Process Technology | — | 30nm-class |
| RoHS Compliant | — | Yes (Lead-Free & Halogen-Free) |