PC28F640P30BF65B vs PC28F640P30BF65B-TR 比較

詳細並排比較 PC28F640P30BF65B 由 Micron Technology 與 PC28F640P30BF65B-TR 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
PC28F640P30BF65B-TR PC28F640P30BF65B-TR - 64Mb Parallel NOR Flash, 52MHz | Micron

PC28F640P30BF65B-TR - 64Mb Parallel NOR Flash, 52MHz | Micron

PC28F640P30BF65B-TR Nrnd

規格比較

參數 PC28F640P30BF65B PC28F640P30BF65B-TR
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 NRND NRND
記憶體類型 Non-Volatile FLASH - NOR (CFI) Non-Volatile Flash (NOR)
記憶體容量 64 Mbit —
Memory Organization 4M x 16 —
資料匯流排寬度 16 bit (x16) —
介面類型 Parallel —
Access Time 65 ns —
Burst Read Clock Frequency 52 MHz —
Write Cycle Time - Word, Page 65 ns —
Sector Architecture Bottom Boot (parameter/small boot blocks at low addresses) —
Supply Voltage - VCC 1.7 V to 2.0 V —
Supply Voltage - VCCQ (I/O) [DATA_NEEDED: VCCQ range per P30 datasheet, typically 1.7V-3.6V] —
工作溫度 -40C to +85C -40 C to +85 C
封裝 / 外殼 64-EasyBGA (10x13 mm) —
安裝類型 Surface Mount —
Program/Erase Endurance [DATA_NEEDED: typical 100K cycles per sector per P30 datasheet] —
RoHS 狀態 [DATA_NEEDED: per latest Alliance/Micron PCN] —
Lead-Free [DATA_NEEDED] —
MSL 等級 [DATA_NEEDED: per EasyBGA JEDEC J-STD-020 rating] —
Density — 64 Mbit (4M x 16)
Process Technology — P30-65nm Axcell
Boot Block Location — Bottom
Architecture — 128 KB uniform blocks + 4 KB parameter blocks
VCC (Core) Range — 1.7 V to 2.0 V
VCCQ (I/O) Range — 1.7 V to 3.6 V
介面 — Parallel (asynchronous + synchronous burst)
Synchronous Burst Frequency — 52 MHz
Asynchronous Access Time — 65 ns (75 ns in some datasheet revisions)
封裝 — 64-ball EasyBGA (10x13 mm)
Block Erase Time (typ.) — 0.4 s
Word Program Time (typ.) — 100 us
Endurance (per block) — 100,000 cycles
Data Retention — 20 years (typical)
Compliance — RoHS

資料表與資源

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