UCC21521DWR vs UCC21550Q-Q1 比較
詳細並排比較 UCC21521DWR 由 Texas Instruments 與 UCC21550Q-Q1 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | UCC21521DWR | UCC21550Q-Q1 |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 類別 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Channel Count | 2 | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Rating | 5700 Vrms | 5000 Vrms (reinforced) |
| CMTI | 100 V/ns (minimum) | — |
| Propagation Delay | 19 ns (typical) | — |
| Delay Matching | 5 ns (maximum) | — |
| Pulse-Width Distortion | 6 ns (maximum) | — |
| Minimum Pulse Width | 10 ns | — |
| Max Switching Frequency | 5 MHz | — |
| Isolation Technology | Capacitive coupling | Capacitive coupling |
| Input Threshold | TTL and CMOS compatible (3.3 V logic) | — |
| Enable / Disable Pin | Yes (DIS) | — |
| 工作溫度 | -40C to +125C | -40C to +150C |
| 封裝 | SOIC-16 (DW) | 16-SOIC (DW) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configurations | Dual low-side, dual high-side, or half-bridge | Dual low-side, dual high-side, or half-bridge |
| RoHS 狀態 | Compliant | Compliant |
| Product Type | — | Reinforced isolated dual-channel gate driver |
| Number of Channels | — | 2 |
| Programmable Dead Time | — | Yes (single resistor) |
| Target Transistors | — | Power MOSFET, SiC, GaN, IGBT |
| Automotive Qualification | — | AEC-Q100 qualified (Q1) |
| Disable Function | — | Yes |
| 供應電壓 | — | [DATA_NEEDED: VDD range] |