BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon
MPN： BSC016N06NSATMA1 ✓ 啟用中BSC016N06NSATMA1 概覽
An N-channel power MOSFET is a voltage-controlled semiconductor switch whose drain-source channel conducts when a positive gate-source voltage (VGS) is applied above its threshold. MOSFETs are a subset of field-effect transistors (FETs) and the dominant switching element in modern switched-mode power supplies (SMPS), where they sit within the broader power-management IC ecosystem as discrete synchronous rectifiers or low-side/high-side switches.
Key features include 71 nC total gate charge (Qg), a logic-level-compatible 10 V gate drive optimized threshold, 2.5 W power dissipation at TA, and 139 W at TC, enabling either compact PCB designs or robust thermal headroom in industrial modules. The PG-TDSON-8 FL package exposes the drain via the thermal pad for low thermal resistance (θJA), which is critical when dissipating >5 W continuously.
The OptiMOS™ 5 process trades a small increase in gate charge for a substantial reduction in RDS(on) and output capacitance (Coss), giving better figures of merit (FOM = RDS(on) × Qg) than older OptiMOS™ 2/3 generations. Designers benefit from lower conduction losses at high load and reduced switching losses at high frequency, especially above 100 kHz.
Typical applications include 48 V DC-DC converters in telecom brick supplies, solar microinverters, server and datacom point-of-load (POL) regulators, motor-drive half-bridges, and battery protection circuits in e-mobility and power tools.
When designing with this device, select a gate driver with adequate sink/source current (≥1 A peak) to charge the 71 nC Qg quickly. Keep the gate-drive loop tight to minimize ringing, and provide sufficient copper area on the thermal pad to keep Tj below 125 °C at full load.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single source for parametric context, supply-chain breadth, and selection guidance.
直接替換替代品，適用於 BSC016N06NSATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： BSC016N06NSATMA1 （相同外形與佔位） — 差異在於 Package, Technology, Operating Temperature Range, Power Dissipation (Tc), Series.
BSC014N06NSATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC016N06NSXT
✅ 直接替換📋 參考替代品（不在目錄中）
BSC047N08NS3GATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSZ110N08NS5ATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC076N06NS3GATMA1
✅ 直接替換聯絡詢價
查看資料表 →FDMS86550
✅ 直接替換📋 參考替代品（不在目錄中）
IPD135N03LGATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC016N06NSATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS™ 5 60V |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 100 A |
| Continuous Drain Current (ID, TA) | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ |
| Total Gate Charge (Qg) | 71 nC |
| Power Dissipation (TA) | 2.5 W |
| Power Dissipation (TC) | 139 W |
| 工作溫度範圍 | -55 °C to +150 °C |
| 封裝 | PG-TDSON-8 FL (SuperSO8 5x6) |
| 安裝類型 | Surface Mount |
| MSL 等級 | 1 (unlimited) |
| RoHS 狀態 | Compliant |
| Gate Drive (recommended) | 10 V |
| Technology | OptiMOS™ 5 |
BSC016N06NSATMA1 腳位配置
| 腳位 1 | D — Drain |
| 腳位 2 | D — Drain |
| 腳位 3 | D — Drain |
| 腳位 4 | G — Gate |
| 腳位 5 | S — Source |
| 腳位 6 | S — Source |
| 腳位 7 | S — Source |
| 腳位 8 | S — Source |
| 腳位 EP | D — Exposed pad / Drain (thermal pad) |
安全工作區 (SOA) - DC
典型應用
BSC016N06NSATMA1 適用於 6 應用s: 48V Telecom Brick DC-DC Converter, Solar Microinverter, Server / Datacom Point-of-Load, Motor Drive / H-Bridge, Battery Protection / BMS Hot-Swap, USB-PD / High-Power Charging.
48V Telecom Brick DC-DC Converter
The BSC016N06NSATMA1 is a synchronous rectifier fit for 48V telecom brick converters where the input bus sits at 36-60V nominal. Its 60V VDS rating provides adequate transient margin for telecom surge specs (per ETSI EN 300 132-2), and the 1.6 mΩ RDS(on) keeps conduction loss below 1% at 50A load. With 71 nC total gate charge and a 10V gate drive, switching loss at 200 kHz remains modest, enabling >97% peak efficiency in half-brick and full-brick modules feeding 12V intermediate buses.
推薦
Solar Microinverter
In photovoltaic microinverters converting 25-50V panel output to 230VAC grid, the BSC016N06NSATMA1 serves as the primary low-frequency and high-frequency switch. Its 100A pulsed rating handles the 200-300% inrush of grid synchronization events, and the 1.6 mΩ on-resistance maximizes CEC-weighted efficiency. The 150°C junction rating and OptiMOS 5 robustness suit outdoor enclosure thermal profiles, while the PG-TDSON-8 FL footprint reduces PCB area by 40% versus DPAK alternatives.
推薦
Server / Datacom Point-of-Load
Server POL converters stepping 48V to 1-12V core voltages for CPUs, GPUs, and DDR memory benefit from BSC016N06NSATMA1's low RDS(on) and 71 nC Qg. In a multi-phase buck topology at 500 kHz - 1 MHz, the device minimizes both conduction loss (1.6 mΩ) and switching loss (low Qgd/Qgs ratio) per phase. Multiple devices parallel easily due to positive temperature coefficient of RDS(on), and the PG-TDSON-8 FL SuperSO8 footprint allows high-density 4-phase layouts under CPU sockets.
推薦
Motor Drive / H-Bridge
The BSC016N06NSATMA1 forms high-side and low-side switches in 24-48V brushed DC and BLDC motor drive H-bridges for robotics, e-bikes, and power tools. Its 100A continuous rating handles inrush at motor startup, and 60V VDS provides 25% margin above 48V battery packs. The 71 nC Qg allows >50 kHz PWM for smooth torque control. Used in pairs, the part delivers up to 6 kW peak per phase in 48V e-mobility traction inverters, with PG-TDSON-8 FL footprint enabling compact ESC designs.
推薦
Battery Protection / BMS Hot-Swap
In 48V lithium battery packs and telecom hot-swap OR-ing controllers, BSC016N06NSATMA1 acts as the disconnect switch during fault events. Its 1.6 mΩ RDS(on) minimizes voltage drop during normal conduction (only ~80 mV at 50A), preserving battery runtime. The 60V VDS rating tolerates 48V bus transients during load-dump, while the 100A continuous rating handles 10x momentary inrush safely. PG-TDSON-8 FL allows dense BMS layouts in 19-inch rack battery shelves.
推薦
USB-PD / High-Power Charging
USB Power Delivery 3.1 Extended Power Range (EPR) chargers delivering 240W operate on a 28-48V bus where BSC016N06NSATMA1 shines as the synchronous rectifier. Its 1.6 mΩ RDS(on) keeps full-load efficiency above 97% at 5A output, and the 71 nC Qg supports 250 kHz switching for compact magnetics. The PG-TDSON-8 FL 5x6 mm footprint fits GaN-replacement designs targeting slim laptop adapters, while the 60V VDS comfortably handles USB-PD Programmable Power Supply (PPS) transients.
推薦
推薦產品摘要
工程參考資料，適用於 BSC016N06NSATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | BSC014N06NSATMA1 | BSC016N06NSXT | BSC047N08NS3GATMA1 | BSZ110N08NS5ATMA1 | BSC076N06NS3GATMA1 | FDMS86550 | IPD135N03LGATMA1 |
|---|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PQFN-8 (5x6 mm) - equivalent | PG-TDSON-8 FL - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 80 V | 80 V | 60 V | 60 V | 30 V |
| RDS(on) max @ VGS=10V | 1.6 mΩ | 1.4 mΩ | 1.6 mΩ | 4.7 mΩ | 11 mΩ | 7.6 mΩ | 2.0 mΩ | 1.35 mΩ |
| Continuous Drain Current (ID @ TC) | 100 A | 100 A | 100 A | 100 A | 100 A | 100 A | 110 A | 120 A |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 | OptiMOS 3 | onsemi PowerTrench | OptiMOS 5 |
| Power Dissipation (TC) | 139 W | 139 W | 139 W | 139 W | 139 W | 139 W | 125 W | 139 W |
| Automotive Grade | No (Industrial) | No (Industrial) | No (Industrial) | No (Industrial) | No (Industrial) | No (Industrial) | No (Industrial) | No (Industrial) |
主要差異化特點
- Industry-leading RDS(on) × Qg figure-of-merit for the 60V class (對比FDMS86550 (onsemi))
- Higher peak current capability than similar RDS(on) parts (對比BSC076N06NS3GATMA1 (Infineon))
- Modern OptiMOS 5 process with tighter threshold voltage distribution (對比BSC047N08NS3GATMA1 (OptiMOS 3, 80V))
設計說明
Estimated: at VIN=48V, VOUT=12V, and 30A load in a synchronous-rectifier position, the BSC016N06NSATMA1 dissipates approximately 1.4W (1.6 mΩ × 30A²). Using θJA of ~50°C/W (1 oz 1 in² copper pad on JEDEC EIA/JESD51 4-layer test board), junction temperature rise above ambient is roughly 70°C, allowing operation up to 80°C ambient before Tj = 150°C derating. For continuous operation above 40A, add thermal vias under the exposed pad and increase copper area to ≥2 in² to drop θJA below 35°C/W.
Place the gate-drive loop (gate driver output → MOSFET gate → MOSFET source → gate driver ground return) over the shortest possible path, ideally with the driver return directly tied to the MOSFET source pin rather than chassis ground. Keep the power loop (input cap → high-side switch → low-side switch → input cap) tight and symmetric. Use at least 2 oz copper on top and bottom layers for the PG-TDSON-8 FL thermal pad with 9 thermal vias (0.3 mm drill, 1 mm pitch) to inner copper planes.
Do not exceed VDS of 60V even transiently - avalanche breakdown is destructive. Add a TVS or RC snubber (≥10 nF + 10 Ω) across the drain-source if inductive kickback from transformers or motors exceeds 48V. Confirm VGS does not exceed ±20V absolute maximum; 10V gate drive is recommended but 12V may be used with margin. Do not parallel more than 4 devices without gate-source resistors on each unit to suppress parasitic oscillation.
合規資訊
Industrial grade per Infineon OptiMOS 5 datasheet. RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - choose IAUC-series automotive variants for AEC-Q100 applications.
