BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
MPN： BSC118N10NSGATMA1 ✓ 啟用中BSC118N10NSGATMA1 概覽
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate current flow between source and drain terminals. MOSFETs are core building blocks of modern switched-mode power conversion, sitting below passive components and above raw silicon in the power-electronics hierarchy: MOSFET -> power switch -> SMPS -> AC-DC or DC-DC converter. The OptiMOS 2 generation specifically targets high-frequency SMPS and synchronous rectification in telecom, server, and computing power rails.
Key features of the BSC118N10NSGATMA1 include N-channel normal-level enhancement mode operation, excellent gate-charge x RDS(on) figure of merit (FOM), very low on-state resistance, 150 C maximum operating junction temperature, Pb-free lead plating, full RoHS compliance, JEDEC qualification for the target application, and halogen-free construction. The advanced trench cell architecture enables the lowest RDS(on) in class, minimizing conduction loss in 48 V telecom bus converters and 24 V industrial point-of-load regulators.
Typical applications include high-frequency DC-DC converters, synchronous rectification in isolated half-bridge and full-bridge converters, telecom 48 V bus converters, server and datacom VRM stages, motor-drive low-side switches, and battery protection in e-mobility and power-tool packs. The PG-TDSON-8-1 footprint is one of the most common power MOSFET packages in 48 V and 24 V rails, simplifying PCB layout reuse across related rails.
When designing with this device, ensure the gate drive voltage swings fully above the threshold (typically 10 V) to achieve the rated RDS(on). For high-current paths, stitch the exposed drain pad directly to a large copper pour to keep thermal resistance below the 50 C/W range and avoid thermal runaway above 100 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 BSC118N10NSGATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： BSC118N10NSGATMA1 （相同外形與佔位） — 差異在於 Package, Technology, Operating Temperature Range, Power Dissipation (Tc), Mounting Type.
BSC123N08NS3GATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC110N10NSFGATMA1
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
BSC0902NSATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC100N10NSFGATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSZ0901NSATMA1
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
FDD86110
✅ 直接替換📋 參考替代品（不在目錄中）
BSC118N10NSGATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 2 |
| FET Type | N-Channel |
| Mode | Enhancement (Normal Level) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A |
| Continuous Drain Current (ID) at Tc=25C | 71 A |
| Power Dissipation (PD) at Tc=25C | 114 W |
| 封裝 | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| 安裝類型 | Surface Mount |
| 工作接面溫度 | -55 C to +150 C |
| Technology | Trench MOSFET |
| Lead Plating | Pb-free |
| RoHS 狀態 | Compliant |
| 無鹵素 | Yes |
| JEDEC Qualification | Qualified per target application |
| Target Application | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) |
BSC118N10NSGATMA1 腳位配置
| 腳位 1 | Source — Source terminal (pin 1 of 8) |
| 腳位 2 | Source — Source terminal (pin 2 of 8) |
| 腳位 3 | Source — Source terminal (pin 3 of 8) |
| 腳位 4 | Gate — Gate drive input |
| 腳位 5 | Source — Source terminal (pin 5 of 8) |
| 腳位 6 | Source — Source terminal (pin 6 of 8) |
| 腳位 7 | Source — Source terminal (pin 7 of 8) |
| 腳位 8 | Drain (Exposed Pad) — Drain terminal on exposed pad; thermal pad |
安全工作區 (DC)
典型應用
BSC118N10NSGATMA1 適用於 7 應用s: 48 V Telecom Bus DC-DC Converter, Synchronous Rectification in Isolated DC-DC, Server and Datacenter VRM Stages, Motor Drive Low-Side Switch, Battery Protection and Hot-Swap, Solar Inverter and Power Optimizer, Industrial 24V Solenoid and Relay Driver.
48 V Telecom Bus DC-DC Converter
The BSC118N10NSGATMA1 is well suited for 48 V telecom bus converters where its 100 V VDS rating provides comfortable margin above the nominal 48 V rail plus transient spikes. Its 71 A continuous drain current at Tc handles peak loads in half-bridge and full-bridge topologies. The OptiMOS 2 cell architecture achieves low RDS(on) at 10 V gate drive, reducing conduction loss in the primary-side switch. Placed as the primary switch in a phase-shifted full-bridge, it minimizes duty-cycle loss and improves overall efficiency. According to the Infineon OptiMOS datasheet, designers should target 100 kHz to 500 kHz switching to balance switching loss against magnetic size.
推薦
Synchronous Rectification in Isolated DC-DC
In isolated half-bridge and forward-converter secondary-side synchronous rectification, the BSC118N10NSGATMA1's trench technology and excellent FOM reduce body-diode conduction loss. The 100 V VDS rating covers 48 V-to-low-voltage isolated bus applications. With 71 A Tc-rated current capability, it can replace Schottky diode pairs in 12 V and 5 V output rails. The exposed drain tab enables direct PCB copper heatsinking, critical for continuous rectification current. Designers should pair it with a gate driver that enforces anti-cross-conduction dead-time to maximize efficiency.
推薦
Server and Datacenter VRM Stages
The BSC118N10NSGATMA1 supports server VRM and datacom power stages that step down 48 V to intermediate bus voltages. Its 100 V VDS rating and 71 A current handling are well matched to multi-phase buck topologies feeding 12 V or 5 V rails. According to the Infineon OptiMOS datasheet, the low FOM enables high-frequency operation (200 kHz+) that shrinks output inductors and capacitors. The PG-TDSON-8-1 footprint is widely adopted in 48 V-to-PoL modules, simplifying PCB reuse. For new designs targeting above 95% efficiency, the BSC100N10NSFGATMA1 (OptiMOS 5) is the recommended upgrade.
推薦
Motor Drive Low-Side Switch
The BSC118N10NSGATMA1 is well suited as a low-side switch in 24 V and 48 V brushed and brushless DC motor drives up to about 30 A continuous. Its 100 V VDS comfortably handles 24 V bus transients and back-EMF spikes from inductive loads. The 114 W power dissipation and PG-TDSON-8-1 footprint enable compact PCB designs in power tools, e-bike controllers, and small industrial drives. According to the Infineon OptiMOS datasheet, the trenched cell design provides robust avalanche capability for repetitive motor commutation events. Pair with a gate driver such as the IR2101 or IRS2184 for full half-bridge operation.
推薦
Battery Protection and Hot-Swap
In 24 V and 48 V battery packs, e-mobility systems, and telecom battery backup, the BSC118N10NSGATMA1 functions as a low-side protection switch or hot-swap controller FET. Its 100 V VDS rating and 71 A current handling accommodate large battery packs with headroom for transient events. The exposed drain pad allows direct PCB copper heatsinking during inrush events. According to Infineon OptiMOS documentation, the cell design provides intrinsic body-diode robustness for reverse-polarity events. Designers should add a TVS across drain-source for additional avalanche protection.
推薦
Solar Inverter and Power Optimizer
The BSC118N10NSGATMA1 supports solar micro-inverter and power-optimizer applications operating from 40 V to 80 V input. Its 100 V VDS rating covers open-circuit PV strings up to about 80 V Voc. The OptiMOS 2 architecture achieves low switching loss at the 50 kHz to 100 kHz switching frequencies common in solar topologies. The PG-TDSON-8-1 footprint is widely used in residential solar electronics, simplifying layout reuse across product families. According to the Infineon OptiMOS datasheet, the device's 150 C junction rating enables operation in outdoor enclosures without active cooling.
推薦
Industrial 24V Solenoid and Relay Driver
The BSC118N10NSGATMA1 is well suited for low-side driving of 24 V industrial solenoids, relays, and actuators. Its 100 V VDS rating handles flyback spikes from inductive loads with generous margin. The 11 A Ta-rated current matches typical solenoid holding currents, and the PG-TDSON-8-1 footprint allows direct PCB mounting in industrial control modules. According to the Infineon OptiMOS datasheet, the device's avalanche rating supports repetitive flyback events. Pair with a freewheeling diode or use the intrinsic body diode for non-critical loads.
推薦
推薦產品摘要
工程參考資料，適用於 BSC118N10NSGATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | BSC123N08NS3GATMA1 | BSC110N10NSFGATMA1 | BSC0902NSATMA1 | BSC100N10NSFGATMA1 | BSZ0901NSATMA1 | FDD86110 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 - same | PG-TDSON-8-1 (TO-252 equivalent) - same |
| Drain-Source Voltage (VDS) | 100 V | 80 V (-20%) | 100 V (same) | 100 V (same) | 100 V (same) | 100 V (same) | 100 V (same) |
| Technology Generation | OptiMOS 2 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi trench |
| Operating Junction Temperature | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C | -55 C to +150 C |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
主要差異化特點
- OptiMOS 2 generation with proven reliability (對比BSC100N10NSFGATMA1 (OptiMOS 5))
- 100 V VDS for 48 V telecom and 24 V industrial rails (對比BSC123N08NS3GATMA1 (80 V))
- PG-TDSON-8-1 footprint with 5x6 mm outline (對比FDD86110 (onsemi, TO-252 equivalent))
設計說明
Estimated: at VDS=48 V, ID=11 A continuous (TA), conduction loss alone is approximately P = ID^2 x RDS(on). With a typical OptiMOS 2 RDS(on) of about 6-8 milliohm at VGS=10 V, this yields ~0.7-1.0 W. The PG-TDSON-8-1 footprint with at least 1 square inch of top-layer copper and thermal vias to inner planes keeps theta_JA near 50 C/W, limiting junction rise to about 50 C above ambient at 1 W dissipation. For continuous 71 A operation (TC reference), forced air cooling or a dedicated heatsink tab is required.
Place the gate drive loop area as small as possible - keep gate trace width below 0.5 mm and gate-source return within 5 mm to minimize parasitic inductance. According to the Infineon OptiMOS datasheet, excessive gate-loop inductance causes ringing that can breach the VGS(max) rating of +/-20 V. Stitch the exposed drain pad directly to a top-layer copper pour with at least 6 thermal vias (0.3 mm drill) to inner planes for optimal heat extraction.
Do not operate the BSC118N10NSGATMA1 below its fully-enhanced gate voltage of 10 V - partial enhancement inflates RDS(on) and can cause thermal runaway in high-current paths. Verify VGS off-state is below 1 V (logic-level signals require a gate driver). For avalanche-prone applications (solenoid, motor), add a TVS clamp or RCD snubber across drain-source to clamp VDS transients below 100 V. Per the datasheet, the device is qualified for target SMPS applications but repeated avalanche should still be characterized.
合規資訊
RoHS compliant and Pb-free lead plating per Infineon OptiMOS datasheet. Halogen-free per manufacturer datasheet. JEDEC qualified for target application. Not AEC-Q100 qualified - select automotive-grade OptiMOS variants for vehicle applications.
