BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
MPN： BSC100N10NSFGATMA1 ✓ 啟用中BSC100N10NSFGATMA1 概覽
An N-channel power MOSFET is a voltage-driven semiconductor switch used to efficiently route or modulate current in power-conversion circuits; the OptiMOS family from Infineon belongs to the broader discrete MOSFET -> power semiconductor -> discrete component taxonomy. Lower RDS(on) reduces conduction loss (I²×R), while a low figure-of-merit (RDS(on)×Qg) reduces switching loss, allowing higher switching frequencies and smaller magnetics in SMPS designs.
Key features include 100V drain-source breakdown, 10 mΩ maximum RDS(on) at VGS=10V, an operating junction temperature range up to 150°C (per industry-standard 150°C power MOSFET practice), and a logic-compatible gate threshold suitable for standard gate drivers. The SuperSO8 5x6 footprint offers an exposed pad that minimizes thermal resistance and supports compact high-current PCB layouts.
The BSC100N10NSFGATMA1 leverages Infineon's OptiMOS trench technology to deliver a balanced switching/conduction loss profile. Its low FOM enables 100-500 kHz hard-switched topologies and synchronous rectification stages where previous-generation parts would either overheat or require paralleling.
Typical applications include telecom and server SMPS, synchronous rectifiers in 48V bus converters, DC-DC point-of-load (POL) modules, motor drive H-bridges, and hot-swap/OR-ing circuits. Its 100V rating provides ample headroom for 48V nominal rails with transient tolerance.
When designing with this device, ensure VGS is driven to 10V for the rated 10 mΩ RDS(on) — logic-level 4.5V drive will increase on-resistance and conduction loss. Use a gate-driver with sufficient peak current (≥1A source/sink) to achieve fast switching edges and minimize crossover loss.
This page synthesizes distributor pricing, drop-in same-package alternatives, parametric comparisons and design notes not collated in the manufacturer datasheet alone.
直接替換替代品，適用於 BSC100N10NSFGATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： BSC100N10NSFGATMA1 （相同外形與佔位） — 差異在於 Package, Technology, Operating Temperature Range, Part Number, Power Dissipation (Tc).
BSC090N10NS3GATMA1
✅ 直接替換📋 參考替代品（不在目錄中）
BSC042NE7NS3GATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC040N10NS5SCATMA1
✅ 直接替換📋 參考替代品（不在目錄中）
BSC123N08NS3GATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →IAUC100N04S6L020ATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →BSC093N15NS5ATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →BSC100N10NSFGATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A |
| Continuous Drain Current (ID), Tc | 90 A |
| Power Dissipation (PD), Tc | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ |
| 封裝 | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount |
| 工作溫度範圍 | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) |
| RoHS 狀態 | Compliant |
BSC100N10NSFGATMA1 腳位配置
| 腳位 1 | G — Gate |
| 腳位 2 | S — Source |
| 腳位 3 | S — Source |
| 腳位 4 | S — Source |
| 腳位 5 | D — Drain |
| 腳位 6 | D — Drain |
| 腳位 7 | D — Drain |
| 腳位 8 | D — Drain |
安全工作區 (estimated, based on PG-TDSON-8-1 100V class)
典型應用
BSC100N10NSFGATMA1 適用於 6 應用s: 48V Telecom/Server SMPS Primary-Side Switch, Synchronous Rectifier in 48V→12V DC-DC Converters, DC-DC Point-of-Load (POL) Buck Stage, Motor Drive H-Bridge / Half-Bridge, Hot-Swap / OR-ing Circuit for Redundant 48V Rails, Solar Inverter / Photovoltaic Boost Stage.
48V Telecom/Server SMPS Primary-Side Switch
The BSC100N10NSFGATMA1 fits 48V nominal telecom and server SMPS primary-side switching where 100V VDS rating tolerates 80V transient excursions on the bus rail. Its 10 mΩ RDS(on) keeps conduction loss manageable at 20-40A load currents, while the low FOM (RDS(on)×Qg) enables 100-300 kHz switching frequencies that shrink magnetic size. Paired with a gate driver such as IRS2153D or IR2127S, it achieves >96% efficiency in 48V→12V LLC or hard-switched forward converters typical of distributed power architectures.
推薦
Synchronous Rectifier in 48V→12V DC-DC Converters
In 48V bus to 12V/24V POL converter synchronous rectification stages, the BSC100N10NSFGATMA1 replaces Schottky diodes to cut conduction loss. Its 100V rating covers the rectified 48V bus with substantial margin, and its low gate charge (Qg) enables fast switching transitions that minimize dead-time loss in the complementary pair. The SuperSO8 5x6 footprint with exposed thermal pad supports the high RMS currents typical of continuous-conduction-mode (CCM) synchronous rectification at 100-300 kHz switching frequency.
推薦
DC-DC Point-of-Load (POL) Buck Stage
For 24-48V input to 3-12V output buck POL modules, the BSC100N10NSFGATMA1 serves as the high-side or low-side switch. Its 100V VDS provides headroom for 48V telecom inputs with inductive ringing, while the 10 mΩ RDS(on) at 10V VGS drive keeps full-load efficiency above 95% at moderate switching frequencies. The SuperSO8 5x6 package's small footprint and exposed thermal pad allow compact POL designs that fit beneath BGA processors in server and networking equipment.
推薦
Motor Drive H-Bridge / Half-Bridge
In 24-48V brushless DC (BLDC) and stepper motor H-bridge stages, the BSC100N10NSFGATMA1 handles PWM switching up to 50 kHz with low crossover loss thanks to its low Qgd/Qgs ratio. Its 100V rating covers back-EMF spikes from 48V motors under hard braking, and the 90A pulsed current rating supports inrush transients during motor startup. The SuperSO8 5x6 footprint allows compact multi-axis motor driver PCB designs for industrial automation and robotics.
推薦
Hot-Swap / OR-ing Circuit for Redundant 48V Rails
In hot-swap and OR-ing circuits for redundant 48V server/telecom power feeds, the BSC100N10NSFGATMA1 acts as the load-switching element. Its 10 mΩ RDS(on) minimizes steady-state voltage drop and power dissipation in the always-on conduction path, while the 100V VDS rating handles inrush transients and back-feed from parallel supplies. The device's logic-level compatible gate threshold (when driven above 10V VGS) enables simple controller ICs such as the BTS500801TEAAUMA1 to manage turn-on/turn-off sequencing.
推薦
Solar Inverter / Photovoltaic Boost Stage
In photovoltaic solar inverter boost stages operating from 24-80V panel input, the BSC100N10NSFGATMA1's 100V VDS rating tolerates open-circuit panel voltage at cold-temperature extremes while its 10 mΩ RDS(on) minimizes conduction loss in continuous PWM operation. The low FOM enables 50-100 kHz switching frequencies that shrink inductor size, and the exposed thermal pad supports sustained current at elevated ambient temperatures typical of outdoor inverter enclosures. The part's -55°C to +150°C junction rating ensures reliability across outdoor thermal cycling.
推薦
推薦產品摘要
工程參考資料，適用於 BSC100N10NSFGATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | BSC090N10NS3GATMA1 | BSC042NE7NS3GATMA1 | BSC040N10NS5SCATMA1 | BSC123N08NS3GATMA1 | IAUC100N04S6L020ATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 75 V | 100 V | 80 V | 40 V | 150 V |
| RDS(on) max at VGS=10V | 10 mΩ | 9 mΩ | 4.2 mΩ | 4 mΩ | 12.3 mΩ | 2 mΩ | 9.3 mΩ |
| Continuous Drain Current (Tc) | 90 A | 90 A | 100 A | 100 A | 90 A | 100 A | 90 A |
| Technology Generation | OptiMOS | OptiMOS | OptiMOS 3 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS 5 |
| Param Match % | 100% | 90% | 80% | 90% | 80% | 70% | 70% |
主要差異化特點
- Drop-in compatible with broader Infineon OptiMOS SuperSO8 5x6 family (對比BSC090N10NS3GATMA1)
- Higher VDS rating than competing OptiMOS 3 part (對比BSC042NE7NS3GATMA1)
- Established OptiMOS generation with proven OptiMOS 5 successor available (對比BSC040N10NS5SCATMA1)
設計說明
Estimated: At ID=30A continuous and RDS(on)=10 mΩ, conduction loss is ~9W (I²×R). On a 4-layer PCB with 1 oz copper and ~25×25 mm top-layer copper pour under the PG-TDSON-8-1 thermal pad, the resulting θJA is approximately 50°C/W, yielding a junction temperature rise of ~75°C above a 50°C ambient. This places Tj near 125°C — acceptable but tight. For continuous operation above 30A, increase copper area to 1 square inch or use forced-air cooling to maintain a >50,000-hour MTBF.
Solder the exposed thermal pad (pins 5-8 drain) to a continuous PCB copper plane with minimum 6 thermal vias (0.3 mm drill, 1 mm pitch) to inner copper layers. Place the gate-drive loop (gate resistor → MOSFET gate → driver GND) area-minimized and away from the power loop to prevent dv/dt-induced false turn-on. Use a 10-100 Ω gate resistor to control switching edge rate and reduce ringing on the gate node.
Do not drive VGS with logic-level 3.3V or 5V — the BSC100N10NSFGATMA1 requires 10V VGS to achieve the rated 10 mΩ RDS(on); under-driving will multiply conduction loss 2-3× and risk thermal runaway. Add a TVS diode or snubber across drain-source if the application has repetitive avalanche stress above 80V. Verify that the chosen gate driver can source/sink ≥1A peak current to fully switch the gate charge within 20-50 ns.
合規資訊
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified — not intended for automotive safety-critical applications.
