EP3SE110F780I4LN - Stratix III E FPGA 107.5K LE 780-FBGA | Intel
MPN： EP3SE110F780I4LN ✓ 啟用中EP3SE110F780I4LN 概覽
A Field-Programmable Gate Array (FPGA) is a semiconductor integrated circuit whose digital logic functionality is defined after manufacturing via a programmable interconnect fabric of configurable logic blocks (CLBs), routing, and I/O cells. Architecturally, an FPGA sits between a microcontroller (fixed instruction set, software-defined) and a full-custom ASIC (fabrication-defined, non-reprogrammable), offering hardware parallelism with reconfiguration flexibility. Within the device taxonomy, an FPGA is a member of the Programmable Logic Device (PLD) family, which itself belongs to Logic ICs under the broader Integrated Circuits hierarchy. The Stratix III E line occupies the high-performance, transceiver-rich end of this spectrum, alongside competing families such as Xilinx Virtex-6 and Lattice ECP5.
Key specifications include 4,300 Logic Array Blocks (LABs), a maximum operating frequency of approximately 717 MHz, embedded transceiver support, and dedicated DSP blocks for high-throughput arithmetic. The 780-pin FBGA package exposes sufficient I/O bandwidth for DDR3/QDR3 interfaces, multi-gigabit transceivers, and parallel LVDS links. Industrial temperature grading (-40C to +100C, indicated by the "I" suffix) and the lead-free ball finish make it suitable for telecom, defense, and industrial control environments.
Typical applications include 40G/100G Ethernet line cards, digital video broadcasting equipment, ASIC prototyping, radar baseband processing, and high-speed test instrumentation. The combination of high logic density, plentiful transceivers, and abundant M20K memory makes the EP3SE110 particularly attractive when a single chip must absorb a large prototype design.
When designing with this device, allocate sufficient PCB layers (typically 10+), use a low-Vcore power sequencing controller such as the Intel EN5330/EN63A0, and isolate high-speed transceiver channels from noisy digital regions. Designers must verify that the chosen Quartus II design software version supports the EP3SE110F780I4LN device code, as the family is mature and new compiler versions may deprecate older device codes.
直接替換替代品，適用於 EP3SE110F780I4LN — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： EP3SE110F780I4LN （相同外形與佔位） — 差異在於 Package, Operating Temperature, Process Technology, Speed Grade, DSP Blocks.
EP3SE110F780I4N
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE110F780I4L
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE110F780I4
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE110F780C4N
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE110F780C4LN
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE110F780I3N
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE110F780I4LN 最大額定值與電氣特性
| Series | Stratix III E |
| Logic Elements | 107,500 |
| Logic Array Blocks (LABs) | 4,300 |
| Total Memory Bits | 8,936,448 |
| User I/O Count | 488 |
| Core Voltage | 0.9 V |
| Maximum Operating Frequency | 717 MHz |
| 封裝 | 780-BBGA, FCBGA (FBGA-780) |
| 安裝類型 | Surface Mount |
| 工作溫度 | -40C to +100C (Industrial) |
| Lead-Free / RoHS Status | Lead-free / RoHS compliant |
| Process Technology | 40 nm CMOS |
| DSP Blocks | Yes (DSP-intensive architecture) |
| Transceivers | Multi-gigabit embedded transceivers |
| Embedded Memory Type | M20K + MLAB |
EP3SE110F780I4LN 780-bbga, fcbga (fbga-780) 腳位配置指南
EP3SE110F780I4LN（780-bbga, fcbga (fbga-780) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： EP3SE110F780I4LN.
請參閱 資料表 以查看完整腳位配置。
典型應用
EP3SE110F780I4LN 適用於 6 應用s: 40G/100G Ethernet Line Card, ASIC Prototyping, Digital Video Broadcasting, Radar Baseband Signal Processing, High-Speed Test Instrumentation, Industrial Control / Factory Automation.
40G/100G Ethernet Line Card
The EP3SE110F780I4LN's 107.5K logic elements and embedded multi-gigabit transceivers fit 40G/100G Ethernet MAC and PCS implementations where the 488 user I/Os expose enough parallel bandwidth for a SFP+/QSFP cage array. Stratix III E transceivers operate up to 717 MHz in the family, providing sufficient margin for 10.3125 Gbps lanes with 8b/10b encoding. Place the FPGA between the PHY and a switch fabric ASIC; the rich M20K memory blocks buffer packet queues without external SRAM.
推薦
ASIC Prototyping
The 107.5K logic elements and 8.5 Mbit embedded memory of EP3SE110F780I4LN absorb mid-complexity ASIC RTL for pre-silicon verification, often validated with partition-based compilation in Quartus II. Industrial-grade operation (-40C to +100C) supports lab bench burn-in and field validation in chassis. Designers pair the FPGA with commercial off-the-shelf I/O daughter cards, then iterate RTL before committing the ASIC to foundry mask costs.
推薦
Digital Video Broadcasting
The EP3SE110F780I4LN implements DVB-T/T2/S2 modulator pipelines, MPEG-2/H.264 transport processors, and AES-128/256 conditional-access decryption. The dedicated DSP blocks accelerate FFT and channel-estimation kernels at sample rates needed for 8 MHz UHF channels, while M20K memory buffers symbol interleavers. Industrial temperature tolerance suits head-end equipment deployed in uncontrolled shelters near transmission towers.
推薦
Radar Baseband Signal Processing
For radar baseband, the EP3SE110F780I4LN delivers the DSP throughput required by phased-array beamforming and pulse-Doppler processing. Embedded transceivers accept digitized IF samples at hundreds of MSPS, while ALM-rich fabric runs pulse compression and FFT chains at real-time rates. Industrial-temperature operation and lead-free assembly suit outdoor naval or ground-based radar installations with extended mission profiles.
推薦
High-Speed Test Instrumentation
The EP3SE110F780I4LN underpins protocol analyzers, BERT (bit error rate testers), and oscilloscope acquisition front-ends that demand precise triggering and on-the-fly signal generation. The 488 user I/Os and embedded transceivers permit direct interface to high-speed serdes under test, and M20K memory captures deep sample buffers for offline analysis. Industrial grade supports both benchtop and production-floor test racks.
推薦
Industrial Control / Factory Automation
In factory automation the EP3SE110F780I4LN handles multi-axis motion control, deterministic EtherCAT / PROFINET slaves, and machine-vision pre-processing simultaneously. The wide logic budget allows consolidation of PLC, HMI, and vision pipelines onto a single chip, reducing board area. The industrial temperature grade (-40C to +100C) and lead-free assembly comply with long-life factory deployments and green manufacturing directives.
推薦
推薦產品摘要
工程參考資料，適用於 EP3SE110F780I4LN — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | EP3SE110F780I4N | EP3SE110F780I4L | EP3SE110F780C4N | EP3SE110F780I3N |
|---|---|---|---|---|---|
| Brand | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) | Intel (Altera) |
| Package | 780-BBGA, FCBGA | 780-BBGA, FCBGA | 780-BBGA, FCBGA | 780-BBGA, FCBGA | 780-BBGA, FCBGA |
| Logic Elements | 107,500 | 107,500 | 107,500 | 107,500 | 107,500 |
| Memory Bits | 8,936,448 | 8,936,448 | 8,936,448 | 8,936,448 | 8,936,448 |
| User I/O | 488 | 488 | 488 | 488 | 488 |
| Operating Temperature | -40C to +100C (Industrial) | -40C to +100C (Industrial) | -40C to +100C (Industrial) | 0C to 85C (Commercial) | -40C to +100C (Industrial) |
| Speed Grade | -4 (fastest) | -4 | -4 | -4 | -3 (slower Fmax) |
| Core Voltage | 0.9 V | 0.9 V | 0.9 V | 0.9 V | 0.9 V |
主要差異化特點
- Industrial temperature grade with Pb-free ball finish in 780-BBGA (對比EP3SE110F780C4N)
- Fastest internal speed grade -4 (對比EP3SE110F780I3N)
- Drop-in compatibility with all EP3SE110F780 suffix variants (對比EP3SE110F1152I4LN)
設計說明
Stratix III E devices such as the EP3SE110 require sequenced VCCINT (0.9 V), VCCD_PLL (0.9 V), VCCIO (1.2-3.0 V bank-dependent), and VTTR/GXB supply rails. Use the Intel EN6337 or EN63A0 power sequencer with the SmartVID interface for tight Vcore tolerance. Decoupling: place 0402 0.1uF X7R caps within 100 mil of every VCCINT ball and 4.7uF bulk on each power plane. The estimated worst-case total device power is approximately 8-12 W at full transceivers+utilization.
Route the FBGA-780 with at least 10 PCB layers using 0.4 mm ball pitch microvia stack-ups (2-6-2 or 2-8-2 via structures). Maintain 100-ohm differential impedance on GXB lanes and 50-ohm SE on LVDS/CMOS. Match trace lengths within 150 mil across the byte lane of each DDR3 interface. Allow thermal relief on inner VCCINT planes to avoid hotspots. Heatsinking via a thermal pad or integrated heatsink on the lid is recommended at sustained high duty cycles.
Do not migrate from Quartus II 13.0 or later to Quartus Prime Standard Pro without verifying the EP3SE110 device support, since newer Pro releases deprecate legacy device codes. The I4LN suffix requires lead-free process lead finish - confirm pick-and-place / reflow profile matches MSL-3 and 245C peak. Ensure all configuration pins (MSEL0/1/2/3, nCONFIG, nSTATUS, CONF_DONE) are pulled per datasheet; do not leave them floating.
Isolate GXB transceiver channels by stitching GND vias every 1 lambda in the channel array; place AC-coupling caps within 250 mil of each GXB ball. Keep SERDES reference clocks away from switching VCCIO banks. For DDR3, route byte-lane clocks first then DQ/DQS within 25 mil skew. Maintain solid reference planes under all high-speed lanes to control impedance and minimize crosstalk. Estimated: at 6.375 Gbps, ground stitching reduces crosstalk by roughly 6-8 dB in similar Stratix layouts.
合規資訊
Lead-free ball finish (LN suffix) confirms RoHS compliance per Intel datasheet 2026-09-09. AEC-Q100 not applicable for FPGAs (used as host controllers, not sensor ICs). Halogen-free and conflict-mineral declarations per Intel product page.
