H5AN8G8NAFR-UHCR - 8Gb DDR4 SDRAM 2400 1.2V | SK Hynix
부품 번호: H5AN8G8NAFR-UHCR ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.68 | $268.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.2 | $2,200.00 |
H5AN8G8NAFR-UHCR 개요
DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory. In the memory hierarchy it sits as main system memory (DRAM), below CPU caches and above storage. Compared with DDR3, DDR4 halves the interface supply voltage to 1.2V, increases the internal bank count (typically 16 banks across 4 bank groups), and raises transfer rates, delivering higher bandwidth at lower power per bit.
Key features of the H5AN8G8NAFR-UHCR include 8Gbit density organized as 1G x 8, a 2400 Mbps/pin data rate (PC2400 per distributor listings), and a compact 78-ball FBGA footprint suited to dense PCB layouts. The part is lead-free and halogen-free and is RoHS compliant, as stated on the SK hynix datasheet title block.
The device uses CMOS process technology with a DDR4 interface: differential clock inputs, on-die termination (ODT), bank-group architecture for higher effective bandwidth, and command/address signaling consistent with the JEDEC DDR4 SDRAM standard class. As an x8 component it presents a single DQ byte lane with DQS/DQS# strobes, simplifying controller interconnect in single-rank or multi-rank designs.
Typical applications include desktop and notebook main memory modules (UDIMM/SODIMM), embedded and industrial computing boards, networking and telecommunications equipment, and server platforms using component-level DRAM. High density per component (8Gb) allows fewer devices per board, reducing BOM count and routing complexity.
Designers should observe DDR4 power-integrity requirements: a clean 1.2V VDD rail, appropriate VPP supply, and fly-by command/address routing with per-byte ODT tuning. Signal-length matching of DQS to DQ per byte lane is critical at 2400 Mbps. Verify speed-bin suffix compatibility when sourcing alternates, since the suffix encodes speed grade and packing option (the trailing R denotes tape-and-reel packing).
This page synthesizes distributor listings, cross-reference data, drop-in alternative MPNs, and practical DDR4 design notes not found in the manufacturer datasheet alone.
드롭인 대체품: H5AN8G8NAFR-UHCR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: H5AN8G8NAFR-UHCR (동일 폼 팩터 및 풋프린트) — 차이점: Interface, Package, Organization, RoHS Status, Data Rate.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
H5AN8G8NAFR-UHC
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →H5AN8G8NAFR-UHI
✅ 드롭인✓ 재고 있음
$4.1 / 개
데이터시트 보기 →H5AN8G8NAFR-VKC
✅ 드롭인✓ 재고 있음
$4.15 / 개
데이터시트 보기 →H5AN8G8NAFR-RDC
✅ 드롭인✓ 재고 있음
$2.95 / 개
데이터시트 보기 →H5AN8G8NAFR-PBC
✅ 드롭인✓ 재고 있음
$2.2 / 개
데이터시트 보기 →H5AN8G6NAFR-VKC
✅ 드롭인✓ 재고 있음
$6.25 / 개
데이터시트 보기 →H5AN8G8NAFR-UHCR 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 8 Gbit |
| 메모리 구성 | 1G x 8 |
| 데이터 속도 | 2400 Mbps/pin (PC2400) |
| Supply Voltage (VDD) | 1.2 V |
| 인터페이스 | CMOS, synchronous DDR4 |
| 패키지 | FBGA-78 (PBGA78) |
| 실장 유형 | Surface Mount |
| Packing Suffix | R = Tape & Reel |
| Speed Grade Code | -UH |
| Generation Family | H5AN8GxNAFR-xxC (DDR4) |
| RoHS 상태 | Compliant (Lead-Free & Halogen-Free) |
| Application Class | Main memory / high bandwidth |
H5AN8G8NAFR-UHCR fbga-78 (pbga78) 핀 구성 가이드
H5AN8G8NAFR-UHCR(fbga-78 (pbga78) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: H5AN8G8NAFR-UHCR.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
H5AN8G8NAFR-UHCR 적합 용도: 6 애플리케이션s: Desktop and Notebook Main Memory Modules, Embedded and Industrial Computing Boards, Networking and Telecommunications Equipment, Server and Data Center Memory Subsystems, Automotive Infotainment and Telematics (non-safety), Test, Measurement and Video Processing Equipment.
Desktop and Notebook Main Memory Modules
The H5AN8G8NAFR-UHCR is a natural fit for UDIMM and SODIMM module assembly. Each 8Gb 1G x 8 chip at 2400 Mbps provides a full byte lane, so eight devices form a 64-bit, 8GB rank - a standard module topology. Its 1.2V DDR4 interface meets JEDEC DDR4 module power budgets, and the compact FBGA-78 package keeps per-chip board area low for high-density modules. At 2400 Mbps, fly-by command/address routing with per-rank ODT tuning keeps eye margins comfortable on 8-layer module stacks; designers should match DQS/DQ trace lengths within the byte lane and run read/write leveling in the memory controller. Because the -UH bin is cost-optimized versus 2666-class bins, it suits mainstream computing platforms that do not need top-bin bandwidth.
추천
Embedded and Industrial Computing Boards
Industrial controllers, HMI panels, and edge-computing boards use component-level DDR4 such as the H5AN8G8NAFR-UHCR to provide gigabytes of main memory without SO-DIMM sockets. The 1.2V supply reduces total memory power versus DDR3 at the same bandwidth, easing thermal design in fanless enclosures, while the 8Gb density allows a compact two-chip 2GB bank on a 1G x 8 bus segment. For extended-temperature industrial programs the footprint-compatible H5AN8G8NAFR-UHI industrial bin can be swapped without any PCB change. Layout practice on industrial boards: keep the DRAM within 50 mm of the SoC, use length-matched fly-by C/A routing, and reserve series termination near the SoC to damp reflections at 2400 Mbps in 4-6 layer stacks.
추천
Networking and Telecommunications Equipment
Switches, routers, and telecom line cards buffer packet data in large DRAM pools, making the 8Gb H5AN8G8NAFR-UHCR a strong candidate: 1G x 8 organization maps cleanly to byte-wide packet engines, and 2400 Mbps per pin gives about 2.4 GB/s per chip of peak bandwidth for queue management. Multi-rank designs double capacity by stacking a second byte lane on the shared C/A bus, leveraging DDR4 bank-group architecture to sustain throughput between ranks. Networking equipment often runs 24/7 at elevated ambient temperatures, so designers should derate refresh (1x to 2x) above 85C per DDR4 rules, allocate solid VDD/VDDQ planes, and qualify the -UHI industrial variant where screening and temperature grade matter more than unit cost.
추천
Server and Data Center Memory Subsystems
Component DRAM like the H5AN8G8NAFR-UHCR is used in server baseboard designs, memory daughter cards, and storage controllers where standard RDIMMs are impractical. The 8Gb density minimizes device count per GB, and DDR4's 1.2V operation helps contain total server memory power - a dominant contributor to data-center energy budgets. In multi-rank, multi-channel server topologies, mixing speed bins is not acceptable: all devices on a channel must run at the slowest bin timing, which is why qualifying the same -UH 2400 Mbps bin across ranks (using -UHC tray stock and -UHCR reel stock interchangeably) simplifies supply. Signal integrity at server trace lengths requires per-byte ODT optimization and read/write leveling; run IBIS simulations with the SK hynix models before layout release.
추천
Automotive Infotainment and Telematics (non-safety)
DDR4 components are widely used in automotive head units, digital clusters, and telematics ECUs for OS and multimedia memory. The H5AN8G8NAFR-UHCR's 8Gb density supports Linux/QNX-based infotainment stacks with 2-4 GB footprints from just two to four chips, and its 1.2V interface reduces memory-rail power in always-on cabin electronics. Note that the standard -UHCR is not AEC-Q100 qualified; for automotive programs requiring qualified DRAM, use the vendor's automotive-grade bin and verify PPAP availability with SK hynix. Infotainment designs should implement the controller's automatic temperature-compensated refresh, follow the fly-by routing discipline, and place the DRAM away from RF/GNSS modules in the telematics unit to avoid switching-noise coupling into receivers.
추천
Test, Measurement and Video Processing Equipment
Oscilloscopes, video frame buffers, and data-acquisition systems need deep, fast streaming buffers, and the H5AN8G8NAFR-UHCR delivers 8Gb per chip at 2400 Mbps - roughly 2.4 GB/s peak per device for capture pipelines. Its x8 byte-lane organization lets designers scale buffer width in byte increments, e.g., four chips forming a 32-bit, 4GB capture buffer. DDR4 bank-group architecture sustains sequential write streams from high-speed ADCs better than earlier generations, but burst-write efficiency depends on bank interleaving in the memory controller; schedule refresh via the controller's deferred-refresh mechanisms to avoid overrun during long captures. Use low-jitter clock distribution to CK/CK# and keep the DRAM clock tree short to preserve setup/hold timing across temperature.
추천
추천 제품 요약
엔지니어링 참조 데이터: H5AN8G8NAFR-UHCR — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | H5AN8G8NAFR-UHC | H5AN8G8NAFR-UHI | H5AN8G8NAFR-VKC | H5AN8G8NAFR-RDC | H5AN8G8NAFR-PBC | H5AN8G6NAFR-VKC |
|---|---|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS Compliance | Compliant (lead-free, halogen-free) | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- Identical die at tray-packing price (vs H5AN8G8NAFR-UHC)
- Industrial screening option in the same footprint (vs H5AN8G8NAFR-UHI)
- Balanced speed-bin economics (vs H5AN8G8NAFR-VKC)
설계 노트
At 2400 Mbps, DDR4 timing budgets are tight. Route command/address in fly-by topology terminated at the last device, and keep DQS/DQS# to DQ length matching within the byte lane per the controller vendor's layout guide (typical target +/-10 mil intra-lane). Simulate with SK hynix IBIS models before releasing the stackup; 6-layer boards with solid VDDQ reference planes are the practical minimum for a 64-bit interface. Enable read/write leveling and VrefDQ training in the controller during bring-up.
Provide a dedicated 1.2V VDD/VDDQ rail and the DDR4 VPP rail (typically 2.5V) per the JEDEC DDR4 power class. Decouple each DRAM ball cluster with a combination of bulk (10-22 uF) and high-frequency (0.1 uF, 0.01 uF) ceramics placed within 2 mm of the package. Burst write currents on 64-bit x8 buses can exceed 1 A transiently; size the VRM transient response accordingly and check rail droop against the DDR4 AC/DC specification under worst-case ODT settings.
Do not mix speed bins (e.g., -UHCR with -VKC) on the same channel - the controller must run all ranks at the slowest bin timing, which wastes the faster bin's bandwidth. The trailing R suffix only denotes tape-and-reel packing, so -UHCR and -UHC are electrically identical. Verify the exact die revision and the datasheet's speed-bin table when qualifying second sources, and confirm temperature-compensated refresh (AC/extended range) settings if the board operates above 85C.
규정 준수 정보
Per SK hynix datasheet title block: Lead-Free & Halogen-Free (RoHS Compliant). REACH, conflict minerals, and AEC-Q100 status not stated in provided data.
