IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon
MPN： IPD380P06NMATMA1 ✓ 啟用中IPD380P06NMATMA1 概覽
A P-channel MOSFET (PMOS) is a voltage-controlled majority-carrier device in which the drain-source channel consists of p-type carriers. When the gate is pulled below the source by a sufficient negative Vgs, the channel conducts; returning the gate to the source potential (or higher) turns the device off. PMOS devices sit in the same transistor taxonomy as N-channel MOSFETs (NMOS) and junction FETs (JFET), but their inherent source-following nature makes them especially attractive for high-side load switching, reverse-polarity protection (RPP), and battery management where the system ground is shared. The P-channel OptiMOS family from Infineon targets 40 V to 100 V applications, reducing design complexity versus discrete N-channel + charge-pump solutions.
Key specifications include a 60 V drain-source breakdown (V(BR)DSS), 35 A continuous Id at 25 C case, low on-resistance that simplifies thermal budgets at moderate loads, logic-level gate compatibility, and fast switching for PWM and high-frequency load-shedding. The trench-cell architecture reduces both R_DS(on) and gate charge (Qg), improving conduction and switching efficiency simultaneously. Avalanche ruggedness is rated per the manufacturer datasheet, making the part suitable for inductive load dump on automotive 12 V/24 V buses.
The PG-TO252-3 (DPAK) footprint uses a large exposed tab that doubles as the drain terminal and a thermal dissipation path. With proper PCB copper-pour sizing (typically 1-2 square inches of 2 oz copper), the part can sustain significant continuous current without external heatsinking. Internal construction uses a wire-bond-free or optimized-bond layout that lowers package parasitals versus legacy DPAK generations.
Typical applications include reverse-polarity protection in 12 V/24 V automotive systems, high-side load switches for body-control modules (BCM), battery management systems (BMS) charge/discharge paths, DC-DC converter high-side switches, motor drive H-bridges, hot-swap / inrush limiting, and USB-PD / power-mux rails. The 60 V rating provides ample headroom above the 24 V automotive transient envelope (ISO 7637-2 pulses) while remaining cost-effective.
When designing in this part, ensure adequate Vgs drive (typically -10 V for lowest R_DS(on), with -4.5 V acceptable at logic-level gate), minimize gate-loop inductance to control dV/dt ringing, and verify SOA against worst-case Vds and Id combinations including avalanche energy during inductive turn-off.
直接替換替代品，適用於 IPD380P06NMATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IPD380P06NMATMA1 （相同外形與佔位） — 差異在於 Package, Operating Temperature Range, Technology, RoHS Status, Drain-Source Voltage (VDS) Max.
IPD380P06NMA
✅ 直接替換📋 參考替代品（不在目錄中）
BSZ180P03NS3EGATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSZ065N06LS5ATMA1
✅ 直接替換聯絡詢價
查看資料表 →VBE2625
✅ 直接替換📋 參考替代品（不在目錄中）
IRFR5305TRPBF
✅ 直接替換聯絡詢價
查看資料表 →IPD90N06S407ATMA2
✅ 直接替換聯絡詢價
查看資料表 →IPD380P06NMATMA1 最大額定值與電氣特性
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage V(BR)DSS | 60 V |
| 連續汲極電流 (TC=25°C) | 35 A |
| Power Dissipation (Tc) | 125 W |
| Technology | OptiMOS P-channel trench |
| 封裝 | PG-TO252-3 (DPAK), surface mount |
| 安裝類型 | Surface Mount |
| 工作溫度範圍 | -55 C to +150 C (junction) |
| Gate Drive | Logic-level compatible |
| Avalanche Rated | Yes (per manufacturer datasheet) |
| RoHS 狀態 | Compliant |
| MSL 等級 | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch |
| Lead-Free | Yes |
IPD380P06NMATMA1 腳位配置
| 腳位 1 | GATE — Gate drive input (logic-level compatible) |
| 腳位 2 | DRAIN — Drain terminal (also exposed tab) |
| 腳位 3 | SOURCE — Source terminal |
典型應用
IPD380P06NMATMA1 適用於 6 應用s: Reverse-Polarity Protection (RPP), High-Side Load Switch, Battery Management System (BMS) Charge/Discharge Path, DC-DC Converter High-Side Switch, Motor Drive H-Bridge (Low-Side / High-Side Pair), Hot-Swap / Inrush Limiting.
Reverse-Polarity Protection (RPP)
The IPD380P06NMATMA1 is explicitly targeted by Infineon for reverse-polarity protection in 12 V and 24 V automotive and industrial systems. Place source at the input supply and drain at the load, gate tied through a resistor to ground. Under correct polarity the P-channel conducts with minimal loss; under reverse polarity it self-biases off within microseconds, blocking fault current. The 60 V V(BR)DSS exceeds ISO 7637-2 load-dump transients, and 35 A Id comfortably handles cranking inrush on automotive buses.
推薦
High-Side Load Switch
Use the IPD380P06NMATMA1 as a high-side switch in body-control modules (BCM) and industrial control, where its P-channel polarity eliminates the charge pump required by N-channel high-side designs. Drive the gate to ground through a resistor to turn on; pull the gate to the source rail (logic-level compatible) to turn off. The 35 A current rating and 125 W power dissipation support relay-replacement duties in 12 V/24 V systems. Fast switching and low Qg minimize drive losses and PWM switching losses at high duty cycles.
推薦
Battery Management System (BMS) Charge/Discharge Path
The IPD380P06NMATMA1 fits Li-ion and lead-acid BMS charge/discharge MOSFET positions where P-channel topology simplifies the protection FET arrangement and reduces system BOM. Its 60 V rating covers multi-cell battery packs up to 12s Li-ion (50.4 V max), and the 35 A continuous Id handles pack-level charge and discharge currents. Logic-level gate drive interfaces directly to BMS AFE ICs without level shifting. Avalanche ruggedness protects against the inductive kickback of motor and relay loads in the same battery system.
推薦
DC-DC Converter High-Side Switch
In buck and buck-boost converters where the high-side switch must block the full input rail, the IPD380P06NMATMA1 simplifies gate drive by replacing an N-channel plus bootstrap or charge pump with a directly driven P-channel. The 60 V V(BR)DSS supports 24 V industrial bus converters and 48 V telecom point-of-load rails with margin. Low Qg reduces switching losses and improves efficiency at high switching frequencies (100 kHz to 1 MHz), making it suitable for compact POL modules.
推薦
Motor Drive H-Bridge (Low-Side / High-Side Pair)
Pair two IPD380P06NMATMA1 devices as high-side switches with N-channel low-side switches to form a complete H-bridge for small DC and stepper motors in 12 V/24 V systems. The P-channel high-side simplifies the gate drive to a simple low-side logic signal; the 35 A rating handles stall currents of typical sub-100 W brushed motors. Fast switching enables PWM speed control up to 25 kHz without significant switching loss. The DPAK package allows compact PCB layout.
推薦
Hot-Swap / Inrush Limiting
Insert the IPD380P06NMATMA1 between a live backplane and a downstream load card to limit inrush current during hot insertion. Drive the gate through a soft-start RC network so that Vgs ramps slowly, causing the P-channel to behave as a controlled current source during turn-on. The 60 V V(BR)DSS handles 48 V telecom backplanes; the 35 A Id supports full-load steady-state after the inrush event. Avalanche ruggedness absorbs the energy stored in cable and PCB inductance during controlled turn-off.
推薦
推薦產品摘要
工程參考資料，適用於 IPD380P06NMATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPD380P06NMA | BSZ180P03NS3EGATMA1 | VBE2625 | IRFR5305TRPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TSDSON-8 - footprint differs | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| V(BR)DSS | 60 V | 60 V | 30 V | 60 V | 55 V |
| Technology Family | OptiMOS P-channel trench | OptiMOS P-channel trench | OptiMOS P-channel | Trench P-channel | HEXFET P-channel |
| Target Application | RPP, load switch, BMS | RPP, load switch, BMS | Battery management, load switch | Drop-in replacement for IPD380P06NMATMA1 | Load switch, DC-DC |
主要差異化特點
- OptiMOS P-channel trench technology for low R_DS(on) and Qg (對比IRFR5305TRPBF)
- Logic-level gate drive compatible (對比BSZ180P03NS3EGATMA1)
- 60 V rating matches 24 V industrial and 48 V telecom rails (對比IPD380P06NMA)
設計說明
Estimated: at Pd=10 W steady state with the PG-TO252-3 (DPAK) thermal pad soldered to 2 oz copper over approximately 1 square inch of board area, junction-to-ambient thermal resistance is roughly 40-50 C/W. The case temperature rise above ambient will be Pd * Rth, so 10 W dissipating 1 W per C of Rth yields a 10-15 C rise. For continuous operation near 35 A on 24 V rails, design with 2-3 square inches of copper or add a small clip-on heatsink to keep Tj below 125 C.
Minimize gate-loop inductance by routing the gate trace directly from the controller output to pin 1 with the shortest possible path, and place a 10 kOhm gate-source pull-down resistor within 5 mm of the gate pin. The drain tab (pin 2) must be soldered to a continuous copper pour that extends beyond the immediate package footprint to act as a thermal heatsink. Use multiple thermal vias under the tab to lower the junction-to-case thermal resistance, typically 6-9 vias of 0.3 mm drill filled with solder.
Do not drive the gate above the source voltage by more than +/- 20 V - the gate oxide absolute maximum is typically +/- 20 V. Do not parallel this P-channel with another without considering R_DS(on) matching and thermal coupling; parallel mismatched devices can lead to thermal runaway. Finally, do not omit the gate-source resistor - without it, the gate can float during system power-up and cause partial turn-on with potentially destructive shoot-through in half-bridge topologies.
合規資訊
RoHS and lead-free confirmed per Infineon product page; AEC-Q100 automotive grade not specified in provided data excerpt - verify with Infineon for safety-critical automotive designs.
