IPD380P06NMATMA1 - 60V P-Ch MOSFET 35A OptiMOS | Infineon
MPN: IPD380P06NMATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.83 | $8.30 |
| 100 | $0.74 | $74.00 |
| 500 | $0.66 | $330.00 |
| 1,000 | $0.58 | $580.00 |
| 3,000 | $0.49 | $1,470.00 |
Drop-in alternatives for IPD380P06NMATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IPD380P06NMA
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View Datasheet →IPD380P06NMATMA1 Maximum Ratings & Electrical Characteristics
| Polarity / Channel Type | P-Channel |
| Drain-Source Voltage V(BR)DSS | 60 V |
| Continuous Drain Current (Tc=25 C) | 35 A |
| Power Dissipation (Tc) | 125 W |
| Technology | OptiMOS P-channel trench |
| Package | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Gate Drive | Logic-level compatible |
| Avalanche Rated | Yes (per manufacturer datasheet) |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Target Applications | Reverse-polarity protection, load switch, BMS, high-side switch |
| Lead-Free | Yes |
IPD380P06NMATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (logic-level compatible) |
| Pin 2 | DRAIN — Drain terminal (also exposed tab) |
| Pin 3 | SOURCE — Source terminal |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IPD380P06NMATMA1 is suitable for 6 applications: Reverse-Polarity Protection (RPP), High-Side Load Switch, Battery Management System (BMS) Charge/Discharge Path, DC-DC Converter High-Side Switch, Motor Drive H-Bridge (Low-Side / High-Side Pair), Hot-Swap / Inrush Limiting.
Reverse-Polarity Protection (RPP)
The IPD380P06NMATMA1 is explicitly targeted by Infineon for reverse-polarity protection in 12 V and 24 V automotive and industrial systems. Place source at the input supply and drain at the load, gate tied through a resistor to ground. Under correct polarity the P-channel conducts with minimal loss; under reverse polarity it self-biases off within microseconds, blocking fault current. The 60 V V(BR)DSS exceeds ISO 7637-2 load-dump transients, and 35 A Id comfortably handles cranking inrush on automotive buses.
Recommended
High-Side Load Switch
Use the IPD380P06NMATMA1 as a high-side switch in body-control modules (BCM) and industrial control, where its P-channel polarity eliminates the charge pump required by N-channel high-side designs. Drive the gate to ground through a resistor to turn on; pull the gate to the source rail (logic-level compatible) to turn off. The 35 A current rating and 125 W power dissipation support relay-replacement duties in 12 V/24 V systems. Fast switching and low Qg minimize drive losses and PWM switching losses at high duty cycles.
Recommended
Battery Management System (BMS) Charge/Discharge Path
The IPD380P06NMATMA1 fits Li-ion and lead-acid BMS charge/discharge MOSFET positions where P-channel topology simplifies the protection FET arrangement and reduces system BOM. Its 60 V rating covers multi-cell battery packs up to 12s Li-ion (50.4 V max), and the 35 A continuous Id handles pack-level charge and discharge currents. Logic-level gate drive interfaces directly to BMS AFE ICs without level shifting. Avalanche ruggedness protects against the inductive kickback of motor and relay loads in the same battery system.
Recommended
DC-DC Converter High-Side Switch
In buck and buck-boost converters where the high-side switch must block the full input rail, the IPD380P06NMATMA1 simplifies gate drive by replacing an N-channel plus bootstrap or charge pump with a directly driven P-channel. The 60 V V(BR)DSS supports 24 V industrial bus converters and 48 V telecom point-of-load rails with margin. Low Qg reduces switching losses and improves efficiency at high switching frequencies (100 kHz to 1 MHz), making it suitable for compact POL modules.
Recommended
Motor Drive H-Bridge (Low-Side / High-Side Pair)
Pair two IPD380P06NMATMA1 devices as high-side switches with N-channel low-side switches to form a complete H-bridge for small DC and stepper motors in 12 V/24 V systems. The P-channel high-side simplifies the gate drive to a simple low-side logic signal; the 35 A rating handles stall currents of typical sub-100 W brushed motors. Fast switching enables PWM speed control up to 25 kHz without significant switching loss. The DPAK package allows compact PCB layout.
Recommended
Hot-Swap / Inrush Limiting
Insert the IPD380P06NMATMA1 between a live backplane and a downstream load card to limit inrush current during hot insertion. Drive the gate through a soft-start RC network so that Vgs ramps slowly, causing the P-channel to behave as a controlled current source during turn-on. The 60 V V(BR)DSS handles 48 V telecom backplanes; the 35 A Id supports full-load steady-state after the inrush event. Avalanche ruggedness absorbs the energy stored in cable and PCB inductance during controlled turn-off.
Recommended
Recommended Products Summary
Engineering reference data for IPD380P06NMATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD380P06NMA | BSZ180P03NS3EGATMA1 | VBE2625 | IRFR5305TRPBF |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TSDSON-8 - footprint differs | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| V(BR)DSS | 60 V | 60 V | 30 V | 60 V | 55 V |
| Continuous Drain Current (Tc=25 C) | 35 A | 35 A | [DATA_NEEDED] | 50 A | [DATA_NEEDED] |
| R_DS(on) at Vgs=-10 V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 20 mOhm | [DATA_NEEDED] |
| Technology Family | OptiMOS P-channel trench | OptiMOS P-channel trench | OptiMOS P-channel | Trench P-channel | HEXFET P-channel |
| Target Application | RPP, load switch, BMS | RPP, load switch, BMS | Battery management, load switch | Drop-in replacement for IPD380P06NMATMA1 | Load switch, DC-DC |
Key Differentiators
- OptiMOS P-channel trench technology for low R_DS(on) and Qg (vs IRFR5305TRPBF)
- Logic-level gate drive compatible (vs BSZ180P03NS3EGATMA1)
- 60 V rating matches 24 V industrial and 48 V telecom rails (vs IPD380P06NMA)
Design Notes
Estimated: at Pd=10 W steady state with the PG-TO252-3 (DPAK) thermal pad soldered to 2 oz copper over approximately 1 square inch of board area, junction-to-ambient thermal resistance is roughly 40-50 C/W. The case temperature rise above ambient will be Pd * Rth, so 10 W dissipating 1 W per C of Rth yields a 10-15 C rise. For continuous operation near 35 A on 24 V rails, design with 2-3 square inches of copper or add a small clip-on heatsink to keep Tj below 125 C.
Minimize gate-loop inductance by routing the gate trace directly from the controller output to pin 1 with the shortest possible path, and place a 10 kOhm gate-source pull-down resistor within 5 mm of the gate pin. The drain tab (pin 2) must be soldered to a continuous copper pour that extends beyond the immediate package footprint to act as a thermal heatsink. Use multiple thermal vias under the tab to lower the junction-to-case thermal resistance, typically 6-9 vias of 0.3 mm drill filled with solder.
Do not drive the gate above the source voltage by more than +/- 20 V - the gate oxide absolute maximum is typically +/- 20 V. Do not parallel this P-channel with another without considering R_DS(on) matching and thermal coupling; parallel mismatched devices can lead to thermal runaway. Finally, do not omit the gate-source resistor - without it, the gate can float during system power-up and cause partial turn-on with potentially destructive shoot-through in half-bridge topologies.
Compliance Information
RoHS and lead-free confirmed per Infineon product page; AEC-Q100 automotive grade not specified in provided data excerpt - verify with Infineon for safety-critical automotive designs.
