BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
MPN: BSZ180P03NS3EGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.82 | $0.82 |
| 10 | $0.74 | $7.40 |
| 100 | $0.66 | $66.00 |
| 500 | $0.59 | $295.00 |
| 1,000 | $0.52 | $520.00 |
| 3,000 | $0.45 | $1,350.00 |
Drop-in alternatives for BSZ180P03NS3EGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSZ130P03NS3GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSZ090P03NS3GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSZ180P03NS3G
✅ Drop-In📋 Reference alternative (not in catalog)
BSZ15DC02KDHXTMA1
✅ Drop-In✓ In Stock
$0.74 / Unit
View Datasheet →BSZ0901NSATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSZ180P03NS3EGATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | P-Channel MOSFET |
| Technology | OptiMOS P3 |
| Drain-Source Voltage (VDS) | -30 V |
| Continuous Drain Current (ID) - Ta | 9 A |
| Continuous Drain Current (ID) - Tc | 39.5 A |
| On-State Resistance (RDS(on)) max | 18 mΩ @ VGS = -10 V |
| Power Dissipation (Ta) | 2.1 W |
| Power Dissipation (Tc) | 40 W |
| Operating Temperature Range | -55°C to +150°C (TJ) |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Lead-Free | Yes |
BSZ180P03NS3EGATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low voltage reference for VGS) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Source — Source terminal |
| Pin 5 | Gate — Gate drive input (negative polarity for P-channel enhancement) |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin EP | Drain — Drain terminal (exposed pad - connected to high-voltage side) |
Safe Operating Area (Drain Current vs Drain-Source Voltage)
Typical Applications
BSZ180P03NS3EGATMA1 is suitable for 6 applications: USB Type-C Power Delivery Load Switch, Notebook Battery Management Protection FET, Industrial High-Side Load Switch, Hot-Swap OR-ing for Redundant Power, Motor Drive / Relay Driver, Portable Wearable / IoT Power Switching.
USB Type-C Power Delivery Load Switch
The BSZ180P03NS3EGATMA1 fits USB-PD high-side load switching with its -30 V VDS tolerating 5V/9V/15V/20V PD rails plus transients, and 18 mΩ RDS(on) keeps conduction loss under 200 mW at 5 A VBUS load. Its 3.3x3.3 mm PQFN footprint frees board area for compact dongles. Placed between VBUS and downstream load with TVS protection, it enables per-port power gating. Compared to bipolar switches, the MOSFET adds no voltage drop beyond I*R, while the small gate charge QG enables fast OVP response. Estimated: at 5 A continuous the steady-state loss is 5² × 0.018 = 0.45 W, well within the 2.1 W Ta rating with adequate copper pour.
Recommended
Notebook Battery Management Protection FET
In 2S-3S Li-ion battery packs the BSZ180P03NS3EGATMA1 serves as the discharge or charge protection FET, with -30 V VDS comfortably exceeding 12.6 V pack voltages plus inductive spike transients. The 18 mΩ RDS(on) keeps voltage drop under 90 mV at 5 A, preserving usable battery capacity. The PG-TSDSON-8 footprint fits inside the battery-pack PCB alongside the gas gauge. Pair it with a dedicated battery protector IC and TVS clamp. Thermal design is straightforward - at typical 1-3 A continuous discharge the loss is 18-162 mW. Choose Q1 automotive grade for safety-critical applications.
Recommended
Industrial High-Side Load Switch
Industrial PLC and sensor systems use the BSZ180P03NS3EGATMA1 as a logic-controlled high-side switch on 24 V rails, taking advantage of its -30 V VDS tolerance that covers 24 V nominal plus inductive transients. The 9 A continuous current handles solenoid and relay coils, while 18 mΩ RDS(on) minimizes heat dissipation in sealed enclosures. Gate drive directly from 3.3 V microcontrollers is feasible with proper VGS drive levels. Pair with a flyback diode for inductive loads. The OptiMOS P3 figure-of-merit also makes this part suited to PWM-driven proportional valves up to 1 kHz.
Recommended
Hot-Swap OR-ing for Redundant Power
In redundant -48 V telecom or -12 V to -24 V distributed systems the BSZ180P03NS3EGATMA1 implements OR-ing between supplies, with -30 V VDS tolerating most negative-rail voltages and 18 mΩ RDS(on) keeping steady-state loss low. Reverse-current blocking happens at near-zero VDS drop, outperforming Schottky diodes that typically add 0.3-0.5 V. Use it between two N+1 redundant buses to feed the load. Pair it with a controller IC that monitors VDS for fast reverse-current cutoff. The 39.5 A Tc current rating provides ample margin for short-circuit surges.
Recommended
Motor Drive / Relay Driver
BSZ180P03NS3EGATMA1 drives small DC motors, solenoids, and relays on the high side up to 9 A continuous, replacing bulky relay contacts with silent solid-state switching. The -30 V VDS handles 24 V motor rails and inductive flyback when paired with a flyback diode. The 18 mΩ RDS(on) keeps coil-driving dissipation under 0.5 W at 5 A. Drive the gate from logic-level signals via a simple gate resistor for slew-rate control. In H-bridge configurations, use complementary N-channel parts like BSC050N03LSGATMA1 on the low-side. The OptiMOS P3 low QG also supports PWM speed control above 20 kHz for quiet motor operation.
Recommended
Portable Wearable / IoT Power Switching
Wearable fitness bands, hearables, and IoT sensor nodes benefit from BSZ180P03NS3EGATMA1's 3.3x3.3 mm PG-TSDSON-8 footprint which fits inside space-constrained enclosures while delivering 9 A peak capability for sensor pulse loads. The 18 mΩ RDS(on) ensures battery life is preserved by minimizing the voltage drop on critical rails like RF PA supply or LED driver. Drive the gate directly from a low-power MCU GPIO at 1.8 V or 3.3 V with proper logic-level threshold. The OptiMOS P3 low leakage (typical I_GSS below 100 nA) preserves standby battery life. Pair with a small LDO for downstream rail regulation.
Recommended
Recommended Products Summary
Engineering reference data for BSZ180P03NS3EGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ130P03NS3GATMA1 | BSZ090P03NS3GATMA1 | BSZ180P03NS3G | BSZ15DC02KDHXTMA1 | BSZ0901NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8 (PQFN 3.3x3.3) | PG-TSDSON-8 (PQFN 3.3x3.3) - same | PG-TSDSON-8 (PQFN 3.3x3.3) - same | PG-TSDSON-8 (PQFN 3.3x3.3) - same | PG-TSDSON-8 (PQFN 3.3x3.3) - same | PG-TSDSON-8 (PQFN 3.3x3.3) - same |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel (dual) | N-Channel (different) |
| Drain-Source Voltage (VDS) | -30 V | -30 V | -30 V | -30 V | -20 V | 30 V (N-ch) |
| RDS(on) max at VGS=10V | 18 mΩ | 13 mΩ (-28%) | 9 mΩ (-50%) | 18 mΩ (identical) | [DATA_NEEDED] | [DATA_NEEDED] |
| Continuous Drain Current (Tc) | 39.5 A | 40 A (similar) | 40 A (similar) | 39.5 A (identical) | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS P3 | OptiMOS P3 | OptiMOS P3 | OptiMOS P3 | OptiMOS (dual) | OptiMOS N |
| 1-piece Price (USD) | 0.82 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-leading OptiMOS P3 figure-of-merit at 30 V P-channel rating (vs BSZ090P03NS3GATMA1)
- Compact PQFN 3.3x3.3 with high continuous current 39.5 A (Tc) (vs BSZ15DC02KDHXTMA1)
- Drop-in identical pinout to entire BSZ-series PQFN 3.3x3.3 family (vs BSZ0901NSATMA1)
Design Notes
Estimated: at 5 A continuous load with 18 mΩ RDS(on), conduction loss is I² × R = 5² × 0.018 = 0.45 W. The PG-TSDSON-8 (PQFN 3.3x3.3) has theta_JA of approximately 60°C/W on a 1 oz 1-square-inch copper pour, yielding a 27°C rise above ambient - well within the 150°C junction limit. For 10 A continuous operation, increase copper area to 2-3 square inches or use thermal vias to inner planes. Above 2 W dissipation, forced airflow or copper spreading becomes mandatory.
Place the BSZ180P03NS3EGATMA1 with its exposed drain pad soldered to a copper pour that extends across multiple inner layers with thermal vias. Keep the gate-trace short and surround it with ground to minimize parasitic inductance - excessive gate inductance causes ringing that can exceed VGS absolute maximum rating (±20 V). Place a 10 kΩ gate-source pull-down resistor directly at the gate pin to prevent accidental turn-on during power-up sequencing when the MCU GPIO is in high-impedance state.
Do not drive the gate at voltages above the absolute maximum VGS rating of ±20 V - this will permanently damage the gate oxide. For P-channel MOSFETs, ensure VGS stays within 0 to -20 V during steady state. Avoid body-diode conduction in reverse-polarity events; add a TVS diode or Schottky for reverse-battery protection. The OptiMOS P3 process requires careful ESD handling - use wrist straps and ESD-safe workstations when handling loose components.
Use a land pattern that matches the Infineon PG-TSDSON-8 (PQFN 3.3x3.3) recommended footprint with 0.5 mm pitch source pads and a central thermal pad. Stencil aperture for the central pad should be split into multiple smaller openings to prevent solder voids. Use ENIG or OSP surface finish for best solderability. The drain pad is the primary thermal path - ensure it has at least 6 thermal vias to inner ground planes for 1-2 W dissipation.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified in this suffix; for automotive, request the Q1-grade variant directly from Infineon.
