IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
MPN: IS43TR16256AL-107MBL ✓ 啟用中IS43TR16256AL-107MBL 概覽
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 15% compared to standard 1.5V DDR3. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, networking equipment, and industrial computing where power efficiency is critical.
Key features include a parallel interface with 933 MHz clock speed, 20 ns access time, and support for 1866MT/s data rate. The device supports various burst lengths (8 and 4 with burst chop), on-die termination (ODT), and programmable CAS latency. It operates over a temperature range of 0°C to +95°C (case) and is RoHS compliant.
The IS43TR16256AL-107MBL utilizes advanced DRAM process technology, providing high reliability and performance. It features auto-refresh and self-refresh modes, which are essential for low-power standby operation. The 96-ball TWBGA package ensures excellent thermal and electrical performance, making it suitable for space-constrained designs.
Typical applications include networking routers and switches, enterprise storage systems, industrial PCs, and embedded computing platforms. Its low voltage and high density make it ideal for memory-intensive applications where power efficiency is a priority.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR3L interface requires careful PCB layout to maintain signal integrity at high speeds, including matched trace lengths and controlled impedance.
直接替換替代品,適用於 IS43TR16256AL-107MBL — 相同封裝,腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號: IS43TR16256AL-107MBL (相同外形與佔位) — 差異在於 Package, Data Rate, Burst Length, Supply Voltage, CAS Latency.
IS43TR16256AL-107MBLI
✅ 直接替換聯絡詢價
查看資料表 →IS43TR16256BL-107MBL
✅ 直接替換📋 參考替代品(不在目錄中)
IS43TR16256AL-125KBL
✅ 直接替換聯絡詢價
查看資料表 →IS43TR16256AL-107MBLI-TR
✅ 直接替換✗ 缺貨
$5.6 / 單位
查看資料表 →MT41K256M16HA-107G:E
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4B4G1646E-BYMATCV
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →H5TC4G63AFR-PBR
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$5.9091 / 單位
查看資料表 →IS43TR16256AL-107MBL 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| 記憶體容量 | 4 Gbit |
| 組織 | 256M x 16 |
| 供應電壓 | 1.35 V |
| 資料速率 | 1866 MT/s |
| Clock Frequency | 933 MHz |
| Access Time | 20 ns |
| CAS 延遲 | 13 |
| 介面 | Parallel |
| 封裝 | 96-TWBGA (9x13 mm) |
| 工作溫度 | 0°C to +95°C (case) |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant |
| Burst Length | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (ODT) |
IS43TR16256AL-107MBL 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 C1 | VDDQ — DQ power supply |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 D1 | VSSQ — DQ ground |
| 腳位 D2 | DQ6 — Data input/output 6 |
| 腳位 D3 | DQ7 — Data input/output 7 |
| 腳位 E1 | CK — Clock input |
| 腳位 E2 | CK# — Complementary clock input |
| 腳位 E3 | CKE — Clock enable |
| 腳位 F1 | CS# — Chip select |
| 腳位 F2 | RAS# — Row address strobe |
| 腳位 F3 | CAS# — Column address strobe |
| 腳位 G1 | WE# — Write enable |
| 腳位 G2 | ODT — On-die termination |
| 腳位 G3 | A0 — Address input 0 |
典型應用
IS43TR16256AL-107MBL 適用於 6 應用s: Networking Routers and Switches, Enterprise Storage Systems, Industrial PCs, Embedded Computing Platforms, Telecommunications Equipment, Consumer Electronics.
Networking Routers and Switches
The IS43TR16256AL-107MBL provides high-density, low-power memory for packet buffering and routing tables in networking equipment. Its 1866MT/s data rate ensures fast data throughput, while the 1.35V operation reduces power consumption in always-on infrastructure. The 96-TWBGA package fits compact line cards, and the wide temperature range supports reliable operation in telecom environments.
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Enterprise Storage Systems
In enterprise storage, the IS43TR16256AL-107MBL serves as cache or buffer memory, offering high bandwidth and low latency. Its 4Gb density and 256Mx16 organization enable efficient data caching, while the 1.35V supply minimizes power in large arrays. The device's auto-refresh and self-refresh modes support low-power standby, crucial for energy-efficient data centers.
推薦
Industrial PCs
The IS43TR16256AL-107MBL is ideal for industrial PCs requiring robust memory in harsh environments. Its 0°C to +95°C case temperature range ensures reliable operation in factory floors, and the 1.35V low voltage reduces heat generation. The 96-TWBGA package provides excellent thermal performance, and the high data rate supports demanding industrial applications like machine vision and process control.
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Embedded Computing Platforms
For embedded systems, the IS43TR16256AL-107MBL offers a balance of density, speed, and power efficiency. Its 4Gb capacity supports complex applications like real-time data processing, while the 1.35V operation extends battery life in portable devices. The device's small footprint and surface-mount package simplify PCB design, and its compatibility with standard DDR3L controllers makes integration straightforward.
推薦
Telecommunications Equipment
In telecom base stations and switches, the IS43TR16256AL-107MBL provides reliable memory for signal processing and protocol handling. Its high data rate and low power consumption are critical for 24/7 operation, and the wide temperature range ensures performance in outdoor enclosures. The 96-TWBGA package offers robust solder joints for vibration-prone environments.
推薦
Consumer Electronics
The IS43TR16256AL-107MBL is suitable for high-end consumer devices like smart TVs and gaming consoles, where memory bandwidth and power efficiency are paramount. Its 1866MT/s data rate supports smooth 4K video playback, while the 1.35V supply reduces heat in slim enclosures. The device's small package enables compact designs, and its RoHS compliance meets global environmental standards.
推薦
推薦產品摘要
工程參考資料,適用於 IS43TR16256AL-107MBL — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IS43TR16256AL-107MBLI | IS43TR16256BL-107MBL | MT41K256M16HA-107G:E | K4B4G1646E-BYMATCV |
|---|---|---|---|---|---|
| Package | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) | 96-TWBGA (9x13 mm) |
| Brand | ISSI | ISSI | ISSI | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 MT/s | 1866 MT/s | 1866 MT/s | 1866 MT/s | 1866 MT/s |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
主要差異化特點
- Industrial temperature grade option (對比IS43TR16256BL-107MBL)
- High data rate at low voltage (對比IS43TR16256AL-125KBL)
- Cross-brand availability (對比MT41K256M16HA-107G:E)
設計說明
For DDR3L at 1866MT/s, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The IS43TR16256AL-107MBL requires a clean 1.35V supply. Use a dedicated voltage regulator with low output noise and fast transient response. Place a 10uF bulk capacitor and multiple 0.1uF ceramic capacitors near the VDD pins. Ensure the VDDQ supply is separate and well-filtered to prevent data corruption.
The device operates up to +95°C case temperature. In high-ambient environments, ensure adequate airflow or a heatsink. The 96-TWBGA package has a thermal resistance of approximately 20°C/W (theta_JA). For a 1W power dissipation, the junction temperature rise is 20°C, so keep ambient below 75°C to stay within limits.
合規資訊
RoHS compliance confirmed from Mouser and ISSI datasheet. Other compliance data not provided.