K4AAG165WM-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung
MPN： K4AAG165WM-BCTD ✓ 啟用中K4AAG165WM-BCTD 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family. Compared with DDR3, DDR4 delivers higher speed, greater bank count, lower operating voltage (1.2 V vs 1.5 V), and improved reliability features such as CRC, ZQ calibration, dynamic on-chip termination, and an asynchronous reset function. In the memory hierarchy, it sits as the main volatile working memory between the CPU and non-volatile storage.
Key features include a 16 Gb density on a single die, x16 organization with data mask support for partial writes, 2666 Mbps/pin speed for 21.3 GB/s peak bandwidth per chip, and a low 1.2 V core supply (1.14 V to 1.26 V tolerance). Samsung's DDR4 process technology reduces standby and active power versus DDR3, enabling thermally constrained and battery-powered designs.
Architecturally, the device uses an 8n prefetch with dual-ended clocking, on-chip DLL, and programmable CAS latency per JEDEC DDR4 requirements. Auto precharge, self-refresh, and ZQ output calibration simplify controller integration.
Typical applications include embedded computing main memory, industrial controllers, networking equipment, and consumer electronics platforms that use x16-wide DDR4 memory buses.
Design consideration: route address/command and data lines as length-matched groups and follow the controller's fly-by or daisy-chain topology guidelines; refresh rate (tREFI) must be observed across the full temperature range.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 K4AAG165WM-BCTD — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K4AAG165WM-BCTD （相同外形與佔位） — 差異在於 Package, Interface, RoHS Status, Data Rate, Memory Format.
K4AAG165WA-BCTD
✅ 直接替換聯絡詢價
查看資料表 →K4AAG165WA-BCWE
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4AAG165WA-BCRC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4AAG165WB-MCTD
✅ 直接替換📋 參考替代品（不在目錄中）
K4AAG165WM-BCRC
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K4AAG165WM-BCTD 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 16 Gb |
| 組織 | 1G x 16 |
| Speed | 2666 Mbps |
| 供應電壓 | 1.2 V (1.14 V to 1.26 V) |
| 工作溫度 | 0C to +85C |
| 封裝 | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| 介面 | SSTL-12 |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| Dynamic On-Chip Termination | Yes |
| Data Mask | Yes |
| 安裝類型 | Surface Mount (BGA solder reflow) |
| RoHS 狀態 | RoHS (per LCSC listing) |
K4AAG165WM-BCTD 96fbga (96-ball fine-pitch ball grid array) 腳位配置指南
K4AAG165WM-BCTD（96fbga (96-ball fine-pitch ball grid array) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K4AAG165WM-BCTD.
請參閱 資料表 以查看完整腳位配置。
典型應用
K4AAG165WM-BCTD 適用於 6 應用s: Embedded Computing Main Memory, Networking and Communication Equipment, Industrial Automation Controllers, Consumer Electronics and Smart Home Hubs, Test and Measurement Instrumentation, Automotive Infotainment (non-safety domain).
Embedded Computing Main Memory
The K4AAG165WM-BCTD provides 2 GB of DDR4 main memory in a single 96FBGA component, ideal for embedded ARM/x86 compute modules that expose a 16-bit memory bus. Its 2666 Mbps data rate yields 21.3 GB/s peak bandwidth per chip, while the 1.2 V core supply keeps power within the thermal envelope of passively cooled industrial and edge-computing hardware. Features such as ZQ calibration and dynamic on-chip termination maintain signal integrity on moderate-length PCB traces without external termination components. Place the device within 50 mm of the SoC and follow fly-by topology for address/command lines; the asynchronous reset function allows the controller to re-initialize memory cleanly after watchdog resets.
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Networking and Communication Equipment
Switches, routers, and telecom line cards use x16 DDR4 as packet-buffer and control-plane memory. The K4AAG165WM-BCTD's 16 Gb density in one 96-ball FBGA minimizes board area on high-density line cards, and its CRC and data-mask functions support reliable burst transactions typical of network processors. At 2666 Mbps the part provides 21.3 GB/s of bandwidth per chip, sufficient for buffering bursts on Gigabit-class ports. The 0C to +85C rating covers central-office and telecom-shelf ambient conditions. Place termination under SoC control using dynamic ODT to handle multi-load buses, and ensure refresh scheduling (tREFI) is handled by the network processor's memory controller to avoid latency spikes.
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Industrial Automation Controllers
PLC CPU modules and motion controllers require dependable working memory with error-management features. The K4AAG165WM-BCTD delivers 2 GB per chip with CRC support and asynchronous reset, letting industrial controllers recover memory state deterministically after faults. Its 1.2 V operation (1.14 V to 1.26 V tolerance) reduces heat inside sealed control cabinets, and the surface-mount 96FBGA withstands vibration better than socketed DIMMs. Designers should derate for cabinet ambient temperatures and confirm sustained case temperatures stay below +85C. Using ZQ calibration with a 1% precision ZQ resistor keeps output impedance correct across process and temperature corners on long backplane-adjacent traces.
推薦
Consumer Electronics and Smart Home Hubs
Smart home hubs, IPTV set-top boxes, and smart displays use one or two 16 Gb x16 DDR4 chips as application memory. The K4AAG165WM-BCTD's low 1.2 V supply and DDR4 standby states extend battery-backed and always-on operating profiles, while 2666 Mbps bandwidth supports UI rendering and media decode buffering. Its x16 organization matches the 16-bit and 32-bit (two-chip) memory buses common in consumer SoCs, so one chip or two chips cover 2 GB and 4 GB configurations on the same PCB. Self-refresh mode allows deep sleep states; pair the part with a controller supporting DDR4 self-refresh entry/exit to minimize idle power in always-listening devices.
推薦
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with predictable latency. The K4AAG165WM-BCTD supplies 2 GB of DDR4 working memory per chip; its programmable CAS latency and on-chip DLL give deterministic timing needed for capture pipelines, and CRC plus data mask protect long burst writes from acquisition engines. The 0C to +85C range suits benchtop instruments. Designers should budget refresh-induced latency (tRFC) into real-time capture paths and use the asynchronous reset input to reinitialize memory between acquisition runs. Dynamic ODT simplifies point-to-point and multi-drop trace topologies inside dense instrument mainboards.
推薦
Automotive Infotainment (non-safety domain)
Infotainment head units and cluster-adjacent displays in the comfort domain use x16 DDR4 for graphics buffers and application memory. The K4AAG165WM-BCTD provides 2 GB per chip at 2666 Mbps, enough for 1080p frame buffers and map caching, with 1.2 V operation easing thermal design in dash-mounted enclosures. Note that this consumer-temperature (0C to +85C) part is appropriate for sheltered, climate-controlled in-cabin installations only; cold-crank and under-hood zones require AEC-Q100-qualified memory. Use self-refresh during infotainment standby to preserve state with minimal power, and enable ZQ calibration to keep impedance stable across cabin temperature swings.
推薦
推薦產品摘要
工程參考資料，適用於 K4AAG165WM-BCTD — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K4AAG165WA-BCTD | K4AAG165WA-BCWE | K4AAG165WB-MCTD | K4AAG165WM-BCRC |
|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
主要差異化特點
- 16 Gb in a single x16 component (對比K4A4G165WF-BCTD)
- Low 1.2 V operation (對比DDR3 SDRAM equivalents)
- Family sourcing flexibility (對比K4AAG165WA-BCTD / K4AAG165WB-MCTD)
設計說明
Route DQ0-DQ15, DM, and DQS/DQS# as length-matched groups; keep DQS pairs at 100-ohm differential impedance and match intra-pair skew tightly. Address/command lines should follow fly-by topology per the memory controller guideline, with reference plane continuity maintained along the full route. Place the 96FBGA within 50 mm of the controller for point-to-point x16 buses. Use the ZQ calibration ball with a precision 240-ohm 1% resistor to ground per JEDEC DDR4 convention.
Supply VDD and VDDQ at 1.2 V nominal (1.14 V to 1.26 V per LCSC family data). Estimated: at 2666 Mbps with typical IDD, per-chip dynamic power is on the order of 0.5-1 W during heavy traffic; budget decoupling accordingly with a bulk 47 uF plus multiple 0.1 uF ceramics close to VDD/VDDQ ball clusters. Verify exact IDD currents against the Samsung datasheet IDD tables for your speed bin and duty cycle before finalizing the power tree.
Do not exceed +85C ambient: unlike industrial-graded DDR4, this part has no extended-temperature rating, and self-refresh retention degrades if refresh rate is not doubled above +85C per JEDEC guidance. Verify the die revision suffix (WA vs WB vs WM) matches your qualification - Samsung sometimes ships multiple die revisions on the same footprint; check the date-code and fab-code marking before production ramp. Also confirm the memory controller's DDR4-2666 initialization sequence includes ZQ LFO calibration and MRS programming per Samsung's datasheet.
合規資訊
RoHS compliance indicated in LCSC listing for the Samsung K4AAG165 family. REACH, halogen-free, and conflict-minerals statuses must be confirmed from Samsung compliance documentation.
