K4AAG165WM-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung
Référence : K4AAG165WM-BCTD ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $75.74 | $75,74 |
| 10 | $72 | $720,00 |
| 100 | $68.5 | $6 850,00 |
| 500 | $65.2 | $32 600,00 |
| 1 000 | $62 | $62 000,00 |
K4AAG165WM-BCTD Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family. Compared with DDR3, DDR4 delivers higher speed, greater bank count, lower operating voltage (1.2 V vs 1.5 V), and improved reliability features such as CRC, ZQ calibration, dynamic on-chip termination, and an asynchronous reset function. In the memory hierarchy, it sits as the main volatile working memory between the CPU and non-volatile storage.
Key features include a 16 Gb density on a single die, x16 organization with data mask support for partial writes, 2666 Mbps/pin speed for 21.3 GB/s peak bandwidth per chip, and a low 1.2 V core supply (1.14 V to 1.26 V tolerance). Samsung's DDR4 process technology reduces standby and active power versus DDR3, enabling thermally constrained and battery-powered designs.
Architecturally, the device uses an 8n prefetch with dual-ended clocking, on-chip DLL, and programmable CAS latency per JEDEC DDR4 requirements. Auto precharge, self-refresh, and ZQ output calibration simplify controller integration.
Typical applications include embedded computing main memory, industrial controllers, networking equipment, and consumer electronics platforms that use x16-wide DDR4 memory buses.
Design consideration: route address/command and data lines as length-matched groups and follow the controller's fly-by or daisy-chain topology guidelines; refresh rate (tREFI) must be observed across the full temperature range.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternatives de remplacement direct pour K4AAG165WM-BCTD — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4AAG165WM-BCTD (même facteur de forme et même empreinte) — différant par Package, Interface, RoHS Status, Data Rate, Memory Format.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4AAG165WA-BCTD
✅ Remplacement direct✓ En stock
$60.59 / unité
Voir la fiche technique →K4AAG165WA-BCWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$62.4 / unité
Voir la fiche technique →K4AAG165WA-BCRC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$64.9 / unité
Voir la fiche technique →K4AAG165WB-MCTD
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4AAG165WM-BCRC
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$22.6 / unité
Voir la fiche technique →K4AAG165WM-BCTD Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 16 Gb |
| Organisation de la mémoire | 1G x 16 |
| Speed | 2666 Mbps |
| Tension d'alimentation | 1.2 V (1.14 V to 1.26 V) |
| Température de fonctionnement | 0C to +85C |
| Boîtier | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Interface | SSTL-12 |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| CRC Function | Yes |
| ZQ Calibration | Yes |
| Dynamic On-Chip Termination | Yes |
| Data Mask | Yes |
| Type de montage | Surface Mount (BGA solder reflow) |
| Statut RoHS | RoHS (per LCSC listing) |
Guide de configuration des broches du K4AAG165WM-BCTD 96fbga (96-ball fine-pitch ball grid array)
Configuration des broches du K4AAG165WM-BCTD (boîtier 96fbga (96-ball fine-pitch ball grid array)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K4AAG165WM-BCTD.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K4AAG165WM-BCTD convient pour 6 applications: Embedded Computing Main Memory, Networking and Communication Equipment, Industrial Automation Controllers, Consumer Electronics and Smart Home Hubs, Test and Measurement Instrumentation, Automotive Infotainment (non-safety domain).
Embedded Computing Main Memory
The K4AAG165WM-BCTD provides 2 GB of DDR4 main memory in a single 96FBGA component, ideal for embedded ARM/x86 compute modules that expose a 16-bit memory bus. Its 2666 Mbps data rate yields 21.3 GB/s peak bandwidth per chip, while the 1.2 V core supply keeps power within the thermal envelope of passively cooled industrial and edge-computing hardware. Features such as ZQ calibration and dynamic on-chip termination maintain signal integrity on moderate-length PCB traces without external termination components. Place the device within 50 mm of the SoC and follow fly-by topology for address/command lines; the asynchronous reset function allows the controller to re-initialize memory cleanly after watchdog resets.
Recommandé
Networking and Communication Equipment
Switches, routers, and telecom line cards use x16 DDR4 as packet-buffer and control-plane memory. The K4AAG165WM-BCTD's 16 Gb density in one 96-ball FBGA minimizes board area on high-density line cards, and its CRC and data-mask functions support reliable burst transactions typical of network processors. At 2666 Mbps the part provides 21.3 GB/s of bandwidth per chip, sufficient for buffering bursts on Gigabit-class ports. The 0C to +85C rating covers central-office and telecom-shelf ambient conditions. Place termination under SoC control using dynamic ODT to handle multi-load buses, and ensure refresh scheduling (tREFI) is handled by the network processor's memory controller to avoid latency spikes.
Recommandé
Industrial Automation Controllers
PLC CPU modules and motion controllers require dependable working memory with error-management features. The K4AAG165WM-BCTD delivers 2 GB per chip with CRC support and asynchronous reset, letting industrial controllers recover memory state deterministically after faults. Its 1.2 V operation (1.14 V to 1.26 V tolerance) reduces heat inside sealed control cabinets, and the surface-mount 96FBGA withstands vibration better than socketed DIMMs. Designers should derate for cabinet ambient temperatures and confirm sustained case temperatures stay below +85C. Using ZQ calibration with a 1% precision ZQ resistor keeps output impedance correct across process and temperature corners on long backplane-adjacent traces.
Recommandé
Consumer Electronics and Smart Home Hubs
Smart home hubs, IPTV set-top boxes, and smart displays use one or two 16 Gb x16 DDR4 chips as application memory. The K4AAG165WM-BCTD's low 1.2 V supply and DDR4 standby states extend battery-backed and always-on operating profiles, while 2666 Mbps bandwidth supports UI rendering and media decode buffering. Its x16 organization matches the 16-bit and 32-bit (two-chip) memory buses common in consumer SoCs, so one chip or two chips cover 2 GB and 4 GB configurations on the same PCB. Self-refresh mode allows deep sleep states; pair the part with a controller supporting DDR4 self-refresh entry/exit to minimize idle power in always-listening devices.
Recommandé
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with predictable latency. The K4AAG165WM-BCTD supplies 2 GB of DDR4 working memory per chip; its programmable CAS latency and on-chip DLL give deterministic timing needed for capture pipelines, and CRC plus data mask protect long burst writes from acquisition engines. The 0C to +85C range suits benchtop instruments. Designers should budget refresh-induced latency (tRFC) into real-time capture paths and use the asynchronous reset input to reinitialize memory between acquisition runs. Dynamic ODT simplifies point-to-point and multi-drop trace topologies inside dense instrument mainboards.
Recommandé
Automotive Infotainment (non-safety domain)
Infotainment head units and cluster-adjacent displays in the comfort domain use x16 DDR4 for graphics buffers and application memory. The K4AAG165WM-BCTD provides 2 GB per chip at 2666 Mbps, enough for 1080p frame buffers and map caching, with 1.2 V operation easing thermal design in dash-mounted enclosures. Note that this consumer-temperature (0C to +85C) part is appropriate for sheltered, climate-controlled in-cabin installations only; cold-crank and under-hood zones require AEC-Q100-qualified memory. Use self-refresh during infotainment standby to preserve state with minimal power, and enable ZQ calibration to keep impedance stable across cabin temperature swings.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4AAG165WM-BCTD — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4AAG165WA-BCTD | K4AAG165WA-BCWE | K4AAG165WB-MCTD | K4AAG165WM-BCRC |
|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Principaux différenciateurs
- 16 Gb in a single x16 component (vs K4A4G165WF-BCTD)
- Low 1.2 V operation (vs DDR3 SDRAM equivalents)
- Family sourcing flexibility (vs K4AAG165WA-BCTD / K4AAG165WB-MCTD)
Notes de conception
Route DQ0-DQ15, DM, and DQS/DQS# as length-matched groups; keep DQS pairs at 100-ohm differential impedance and match intra-pair skew tightly. Address/command lines should follow fly-by topology per the memory controller guideline, with reference plane continuity maintained along the full route. Place the 96FBGA within 50 mm of the controller for point-to-point x16 buses. Use the ZQ calibration ball with a precision 240-ohm 1% resistor to ground per JEDEC DDR4 convention.
Supply VDD and VDDQ at 1.2 V nominal (1.14 V to 1.26 V per LCSC family data). Estimated: at 2666 Mbps with typical IDD, per-chip dynamic power is on the order of 0.5-1 W during heavy traffic; budget decoupling accordingly with a bulk 47 uF plus multiple 0.1 uF ceramics close to VDD/VDDQ ball clusters. Verify exact IDD currents against the Samsung datasheet IDD tables for your speed bin and duty cycle before finalizing the power tree.
Do not exceed +85C ambient: unlike industrial-graded DDR4, this part has no extended-temperature rating, and self-refresh retention degrades if refresh rate is not doubled above +85C per JEDEC guidance. Verify the die revision suffix (WA vs WB vs WM) matches your qualification - Samsung sometimes ships multiple die revisions on the same footprint; check the date-code and fab-code marking before production ramp. Also confirm the memory controller's DDR4-2666 initialization sequence includes ZQ LFO calibration and MRS programming per Samsung's datasheet.
Informations de conformité
RoHS compliance indicated in LCSC listing for the Samsung K4AAG165 family. REACH, halogen-free, and conflict-minerals statuses must be confirmed from Samsung compliance documentation.
