K4AAG165WM-BCTD vs K4AAG165WM-BCWE 比較
詳細並排比較 K4AAG165WM-BCTD 由 Samsung Electronics 與 K4AAG165WM-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4AAG165WM-BCTD | K4AAG165WM-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 組織 | 1G x 16 | 256M x 16 (1G x 16) |
| Speed | 2666 Mbps | — |
| 供應電壓 | 1.2 V (1.14 V to 1.26 V) | — |
| 工作溫度 | 0C to +85C | [DATA_NEEDED: temperature range for WM-BCWE] |
| 封裝 | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 78-ball FBGA |
| 介面 | SSTL-12 | Parallel (DDR4) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask | Yes | — |
| 安裝類型 | Surface Mount (BGA solder reflow) | Surface Mount |
| RoHS 狀態 | RoHS (per LCSC listing) | Compliant |
| 資料速率 | — | 3200 Mbps |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| CAS 延遲 | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |