K9DUGB8S7M - Samsung NAND Flash Memory IC | Samsung
MPN： K9DUGB8S7M ✓ 啟用中K9DUGB8S7M 概覽
NAND flash is a type of non-volatile memory that retains stored data without power. Within the memory hierarchy, NAND flash sits alongside DRAM (volatile) and NOR flash (execute-in-place); it is the workhorse technology behind SSDs, eMMC storage, USB drives, and embedded data loggers. A NAND device is organized as a array of blocks, each containing pages that are programmed whole and erased block-by-block, which is why host controllers must provide wear leveling, bad-block management, and ECC.
Key characteristics of Samsung K9-family NAND include a standard x8 I/O NAND interface, block-erasable/page-programmable organization, and surface-mount packaging suited to automated assembly. The DCK0 suffix identifies a specific speed grade and packing option within the ordering code, and buyers should confirm the full orderable part number against the vendor listing before design-in.
Typical applications include embedded controller firmware and data storage in industrial control systems, configuration and log storage in telecommunications equipment, and general-purpose non-volatile storage in embedded system boards. In these roles the NAND device typically pairs with an MCU, MPU, or dedicated NAND controller that issues the erase/program/read command sequences.
A key design consideration is that raw NAND requires external error-correcting code (ECC) and bad-block management in the host controller; it is not a plug-and-play storage device like managed eMMC. Verify the device page size, block size, and timing parameters against the manufacturer datasheet before writing controller firmware.
This page synthesizes distributor listings, ordering-code information, and sourcing guidance for the K9DUGB8S7M, including same-family alternates available on XAIPART, information not consolidated in any single manufacturer document.
直接替換替代品，適用於 K9DUGB8S7M — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： K9DUGB8S7M （相同外形與佔位） — 差異在於 Memory Type, RoHS Status, Mounting Type, Package, Package Type.
K9PKGY8S7M-CCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9PKGY8S7M-CCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9PRGY8S7M-CCK0
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9PRGY8S7M
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9HQGY8S5M
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →K9DUGB8S7M 最大額定值與電氣特性
| 記憶體類型 | NAND Flash |
| Manufacturer | Samsung Electronics |
| Ordering Code | K9DUGB8S7M-DCK0 |
| 安裝類型 | Surface Mount |
K9DUGB8S7M standard 腳位配置指南
K9DUGB8S7M（standard 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： K9DUGB8S7M.
請參閱 資料表 以查看完整腳位配置。
典型應用
K9DUGB8S7M 適用於 6 應用s: Industrial Control Systems, Embedded System Data Storage, Telecommunications Equipment, Firmware and Boot Storage, Data Loggers and Instrumentation, Legacy Board Repair and Sustainment.
Industrial Control Systems
In industrial control and factory automation equipment, the K9DUGB8S7M-DCK0 serves as non-volatile storage for firmware images, configuration parameters, and event logs. Samsung K9-family NAND provides block-erasable, page-programmable storage that survives power loss without battery backup, which is essential for controllers that may be cycled daily for years. The host MCU or NAND controller must implement the ECC scheme and bad-block management defined in the Samsung datasheet, and wear-leveling software extends endurance across the full block array. Because industrial environments span wide temperatures, verify the device operating range on the DCK0 ordering-code datasheet before final qualification, and reserve spare blocks in the bad-block table layout.
推薦
Embedded System Data Storage
Embedded boards use the K9DUGB8S7M as raw NAND storage for application data, calibration tables, and over-the-air update staging. The standard asynchronous NAND interface latches command, address, and data on the I/O bus, making it straightforward to attach to MPUs with a NAND controller or to a general-purpose MCU using GPIO bit-banging for low-rate access. A filesystem layer such as YAFFS or a flash translation layer provides wear leveling on top of the raw device. Designers should match page size and block size in the driver to the exact values in the Samsung datasheet for the DCK0 speed grade, and validate timing registers across the full voltage and temperature range before mass production.
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Telecommunications Equipment
Telecom line cards, gateways, and network appliances rely on NAND flash such as the K9DUGB8S7M for boot code, firmware, and configuration archives that must persist across reboots and power interruptions. The non-volatile nature of floating-gate NAND storage ensures retention without refresh, while page programming supports field firmware updates in the field. In high-availability telecom designs, the boot loader should include dual-image schemes so that a failed update can be rolled back, with the NAND bad-block table stored redundantly. Confirm the ordering code K9DUGB8S7M-DCK0 speed grade against the controller timing requirements, and budget ECC overhead in the storage capacity plan.
推薦
Firmware and Boot Storage
Many processors cannot execute directly from NAND, so the K9DUGB8S7M is commonly used as boot storage: an internal ROM copies the first pages into on-chip SRAM, which then loads the full image from NAND. This boot-from-NAND flow requires the initial loader pages to be free of bad blocks and bit errors, so manufacturers typically program the boot region with stronger ECC and duplicate it. The DCK0 suffix ordering code defines page timing that the ROM loader assumes; verify the device's page-read cycle time from the Samsung datasheet matches the ROM loader's expected timing table. Keeping a factory-programmed boot image consistent across production units simplifies manufacturing test.
推薦
Data Loggers and Instrumentation
Battery-powered and portable instrumentation uses the K9DUGB8S7M to log measurement data over long deployments. Raw NAND offers high density at low cost per bit, and its non-volatile cells retain logged data indefinitely without power. Because program operations occur at page granularity, logger firmware typically buffers samples in SRAM and flushes full pages to minimize block churn, directly extending effective endurance. The controller must apply the datasheet-specified ECC and skip factory bad blocks. Designers of long-life loggers should also model retention at maximum operating temperature, since NAND data-retention specifications shorten as junction temperature rises, and schedule periodic data offload accordingly.
推薦
Legacy Board Repair and Sustainment
For maintaining legacy industrial and telecom hardware designed around Samsung K9 NAND, the K9DUGB8S7M-DCK0 supports board-level repair where the storage device has failed or the design requires the originally qualified MPN. Raw NAND replacement is firmware-sensitive: the substitute must match the original's page size, block size, interface width, and timing registers, or the existing controller will fail to read the bad-block table. Repair workflows should image the failed device's content where possible, program a new device with the same image plus updated bad-block table, and verify read-back across the full array before returning the board to service.
推薦
推薦產品摘要
工程參考資料，適用於 K9DUGB8S7M — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | K9PKGY8S7M-CCK0 | K9PRGY8S7M | K9HQGY8S5M |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | NAND Flash | NAND Flash | NAND Flash | NAND Flash |
| Speed/Timing Suffix | S7M (DCK0 ordering code) | S7M (CCK0 ordering code) | S7M | S5M (slower grade) |
| Catalog Availability | Quote-based (spot channels) | XAIPART product page | XAIPART product page | XAIPART product page |
主要差異化特點
- Same speed suffix as available catalog alternates (對比K9PRGY8S7M)
- Quote-based sourcing protects against spot-market counterfeits (對比K9PKGY8S7M-CCK0)
- Slower-grade fallback available (對比K9HQGY8S5M)
設計說明
Raw NAND such as the K9DUGB8S7M is not a managed storage device: the host must implement ECC, bad-block management, and wear leveling. Skip factory-marked bad blocks recorded in the initial page data, erase each block fully before programming, and never program a page twice. Using the wrong ECC scheme for the device's process generation causes uncorrectable bit errors in the field even though bench tests pass.
Verify the K9DUGB8S7M supply voltage (commonly 3.3V-class VCC for K9 asynchronous NAND, but confirm on the DCK0 datasheet) and decouple VCC with at least 0.1uF ceramic close to each supply pin. NAND program operations draw short current bursts; undersized supply decoupling shows up as write errors under load. Add bulk capacitance near the device and ensure the regulator can handle program-current transients without drooping below the datasheet minimum.
Keep the NAND I/O bus, CLE, ALE, /CE, /RE, and /WE traces short and length-matched where the controller supports fast timing grades such as the S7M suffix. Avoid routing these signals near switching-regulator nodes; the DC-DC converter feeding the rail should be placed away from the memory bus. Provide solid ground return under the bus and series termination if trace lengths exceed the controller's drive specification.
合規資訊
Compliance status not stated in the verified web data retrieved for this MPN; request a certificate of conformance from the supplier for the specific date code.
