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IGI60L5050B1MXUMA1 - 600V GaN Half-Bridge with Integrated Driver | Infineon
The Infineon IGI60L5050B1MXUMA1 is a 600 V gallium-nitride (GaN) half-bridge power stage with two 500 mΩ enhancement-mode GaN switches, integrated high-side and low-side gate drivers, level shifting, and an integrated ultra-fast low-resistance bootstrap diode, packaged in a 27-pin PG-TFLGA-27-2 (6x8 mm) chip-scale package. It targets high-frequency, high-efficiency switched-mode power conversion where silicon MOSFETs are loss-limited. A GaN half-bridge power stage combines two GaN FETs and a high-side/low-side driver in a single package, eliminating parasitic inductance between switches and gate loop, enabling sub-nanosecond switching transitions and reducing dead-time losses compared to discrete silicon implementations. GaN (gallium nitride) is a wide-bandgap semiconductor with lower on-resistance per unit area, no reverse-recovery charge (Qrr ≈ 0), and higher switching slew rates than silicon MOSFETs, making GaN half-bridges the preferred power stage for totem-pole PFC, LLC converters, and high-frequency motor drives. Key features of the IGI60L5050B1MXUMA1 include source/sink driving current of +0.29 A / -0.7 A, application-configurable turn-on and turn-off dV/dt for EMI tuning, an integrated bootstrap diode that eliminates an external high-voltage diode, and 600 V drain-source rating. The exposed top pad provides low thermal resistance to the PCB copper, allowing sustained high-current switching without an external heatsink. Architecturally the device integrates a level shifter, low-side gate driver, high-side gate driver, two 500 mΩ GaN switches, and a bootstrap diode monolithically in CoolGaN™ technology. This integration reduces the gate-drive loop inductance to near-zero and allows switching frequencies up to several MHz, dramatically shrinking magnetics and output capacitor size in SMPS designs. The configurable gate resistors allow designers to trade switching loss against EMI margin per application. Typical applications include totem-pole bridgeless PFC front-stages in server and telecom power supplies, LLC and HF resonant converters up to 1-2 kW, photovoltaic micro-inverters and optimizers, industrial SMPS, and high-frequency BLDC motor drives. The wide 600 V rating also makes it suitable for 400 V EV auxiliary converters and on-board chargers. When designing with this part, observe the maximum junction temperature (typically 150 °C), keep high-side bootstrap voltage above UVLO threshold at all switching frequencies, and minimize the power-loop layout inductance to less than 5 nH for clean switching. Use the configurable gate resistor pins to tune dV/dt against EMI compliance limits. This page synthesizes distributor pricing, drop-in alternative analysis, and practical PCB-layout design notes that go beyond the manufacturer datasheet.
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
The Infineon IGI65D1414A3MSXUMA1 is a 650 V enhancement-mode CoolGaN™ half-bridge power stage integrating two 140 mΩ (typical R_DS(on)) GaN HEMTs in a compact 6x8 mm PG-TIQFN-32-1 (QFN-32) package. The monolithic half-bridge delivers the superior switching behavior of GaN (no reverse-recovery charge, low output capacitance, sub-ns transitions) while shrinking the PCB footprint versus discrete high-side + low-side layouts, enabling higher power density in space-constrained converters. A GaN HEMT (High-Electron-Mobility Transistor) is a wide-bandgap power transistor that conducts through a two-dimensional electron gas formed at an AlGaN/GaN heterojunction. Compared with silicon MOSFETs, GaN offers lower gate charge, zero reverse-recovery body-diode loss, and much smaller capacitances, allowing converters to switch at multi-hundred-kHz to MHz frequencies with high efficiency. The "half-bridge" configuration (one high-side + one low-side switch with a switched node) is the basic building block of synchronous buck, boost, totem-pole PFC, and Class-D audio stages. Key features include 650 V drain-source blocking voltage, 140 mΩ typical on-resistance per switch, an integrated gate-drive-optimized source connection, and a thermally enhanced QFN-32 package with exposed top-side cooling. The co-packaged half-bridge is targeted at high-density AC-DC adapters, low-power motor drives, and LED lighting. Architecturally, the two GaN FETs share a common substrate with isolated drain/source pads for high-side and low-side; the package's source-down exposed pad provides a low-impedance thermal path. This integration reduces parasitic loop inductance between the FETs and the driver, enabling cleaner switching waveforms and reduced EMI. Typical applications include 65-240 W USB-PD adapters, totem-pole PFC front ends, BLDC motor drive half-bridges, Class-D audio amplifiers, and high-frequency LLC or active-clamp flyback converters. The wide 650 V rating also supports universal-input (90-264 VAC) offline designs. When designing with this device, follow Infineon's recommended gate-drive layout (minimum power-loop inductance, isolated high-side drive return) and ensure adequate thermal copper on the exposed pad. The GaN FETs require a gate-drive supply referenced to the Kelvin-source pin to suppress source-inductance-induced turn-on losses. This page synthesizes verified distributor pricing, same-brand CoolGaN alternatives, drop-in QFN-32 options, and practical design notes not found in the standalone manufacturer datasheet.
IGK120B041SXTSA1 - 40V GaN Bidirectional Switch | Infineon
Infineon IGK120B041SXTSA1 is a 40 V normally-off, monolithic bidirectional GaN power switch (CoolGaN BDS) housed in a chip-scale SG-UFWLB-16-2 (WLCSP 1.2x1.7 mm) package, rated for 30 A continuous drain current (Tc) and 15 W power dissipation (Tc). It is built on Infineon's third-generation (G3) medium-voltage gallium nitride on silicon process, providing symmetric 40 V blocking in both polarities from a single die, which eliminates the need for back-to-back silicon MOSFETs in AC and bidirectional DC applications. The device features a 1.2 W rating at TA, a 4.4 nC total gate charge, and ultra-low on-state resistance for the 40 V class, enabling high-frequency, high-density power conversion. A bidirectional switch (BDS) is a four-quadrant semiconductor device that can block voltage and conduct current in either direction when turned on, functionally equivalent to two anti-series transistors sharing a common drain. CoolGaN BDS sits in the hierarchy: GaN FET -> wide-bandgap power device -> discrete semiconductor -> power management. Compared to silicon back-to-back MOSFETs, a monolithic GaN BDS halves the conduction path, reduces parasitic inductance, and removes the body-diode reverse-recovery loss, which is critical at high switching frequencies and in resonant topologies. Key features include 40 V symmetric VDS, monolithic bidirectional blocking without series MOSFETs, normally-off operation for fail-safe start-up, low on-state resistance, 4.4 nC gate charge for low driving loss, and a chip-scale WLCSP 1.2x1.7 mm footprint that maximizes power density on the PCB. The SG-UFWLB-16-2 package is fully Pb-free and RoHS compliant, and the wide-bandgap GaN process supports junction temperatures well above the 150 C silicon limit. Technically, the CoolGaN G3 medium-voltage platform uses a p-GaN gate structure on a silicon substrate, achieving a figure-of-merit that significantly outperforms 40 V silicon MOSFETs. The monolithic construction eliminates the source-to-source connection of two discrete MOSFETs, removing one bond-wire and one package parasitic, which directly reduces ringing, switching loss, and thermal resistance. Typical applications include high-side load switches in USB-PD, eMobility, and battery management, AC solid-state relays and circuit breakers, half-bridge and full-bridge converters in motor drives, and resonant topologies such as LLC and Class-D audio where body-diode recovery would otherwise dominate losses. The bidirectional capability is particularly attractive in battery disconnect units where the device must block both charge and discharge transients. Designers should note that the SG-UFWLB-16-2 package requires careful PCB land-pattern design and inspection - it is a wafer-level chip-scale package, not a conventional QFN. Thermal performance is heavily dependent on PCB copper area, and the gate drive must be a GaN-compatible, low-impedance, split-supply or negative-bias-off driver to ensure robust normally-off behavior and fast switching edges. This page synthesizes distributor stock and pricing, the drop-in alternative landscape (including same-package Infineon GaN BDS variants), and practical design notes not present in the manufacturer datasheet, supporting purchasing and engineering decisions in 2026.
IGL65R080D2XUMA1 - 650V 80mΩ CoolGaN G5 Transistor | Infineon
The Infineon IGL65R080D2XUMA1 is a CoolGaN™ G5 650 V enhancement-mode gallium-nitride (GaN) power transistor in a ThinPAK 8x8 (PG-TSON-8-U06) surface-mount package with wettable flanks. It combines an 80 mΩ typical on-resistance with a 650 V drain-source voltage rating, targets up to 18 A continuous drain current at case temperature, and dissipates up to 81 W. Produced on Infineon's 200 mm GaN-on-Si production line, the device delivers narrow parameter tolerances and ultrafast switching for high-density power conversion. A GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power transistor in which current flows through a two-dimensional electron gas formed at the AlGaN/GaN heterojunction. Compared with silicon MOSFETs in the same voltage class, GaN transistors offer lower on-resistance per unit area, near-zero reverse-recovery charge (Qrr), and switching speeds roughly an order of magnitude faster. These traits enable smaller magnetics, higher switching frequencies, and efficiencies above 98 percent in hard- and soft-switched topologies. GaN HEMTs belong to the broader power-semiconductor family that sits alongside silicon MOSFETs, IGBTs, and SiC MOSFETs. Key features of the IGL65R080D2 include an 80 mΩ typical RDS(on) at 25 °C, a 650 V drain-source breakdown suitable for 400 V PFC boost and half-bridge legs, a low Qoss / Qrr that reduces dead-time losses, and an integrated gate structure compatible with standard 0–10 V gate-drive signals. The PG-TSON-8-U06 package provides a thermally efficient top-side cooling path with wettable flanks for automated optical inspection. The MG-HEMT (metal-gate HEMT) architecture used in CoolGaN G5 keeps the channel normally-off without a cascode structure, simplifying gate-drive design and eliminating the reverse-conduction diode drop of cascode GaN. The 200 mm wafer process supports tight parametric distribution, which is critical for paralleling multiple devices in high-current converters. Typical applications include telecom and server SMPS, USB-PD adapters, totem-pole bridgeless PFC, half-bridge LLC and hard-switched full-bridge converters, and on-board chargers for electric vehicles. Industrial motor drives and photovoltaic inverters in the 1–10 kW range also benefit from the 650 V rating. When designing around this device, select a gate driver rated for the G5 turn-on threshold and place the gate-loop return as close to the source Kelvin connection as possible to avoid false triggering from the power-loop di/dt. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IGLD60R070D1AUMA3 - 600V 70mΩ CoolGaN™ eMode GaN FET | Infineon
The Infineon IGLD60R070D1AUMA3 is a 600V, 70 mΩ enhancement-mode (normally-off) CoolGaN™ gallium-nitride (GaN) power transistor in a surface-mount PG-LSON-8-1 package, delivering continuous drain current of 15 A (Tc) and power dissipation of 114 W (Tc). Built on Infineon's 600 V CoolGaN™ platform, the part offers ultra-low gate charge, near-zero reverse-recovery charge, and sub-nanosecond switching transitions that collapse switching losses against silicon MOSFETs of similar Rds(on). The device is offered in tape-and-reel packaging, qualified to MSL-3, and certified through an extensive GaN-specific qualification process that exceeds industry standards. A GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power switch that conducts through a two-dimensional electron gas formed at the AlGaN/GaN heterojunction, rather than through a doped silicon channel. Because GaN has a 3.4 eV bandgap (versus 1.1 eV for silicon) and a critical electric field roughly ten times higher than silicon, GaN transistors achieve dramatically lower Rds(on) × area figures of merit, faster switching edges, and smaller output charge (Qoss, Coss, Qrr) than comparable Si MOSFETs. Enhancement-mode GaN FETs use a proprietary cascode-free normally-off structure (here, a p-GaN gate) to deliver MOSFET-like gate drive simplicity without the lossy silicon cascode. Within the power-converter hierarchy, the GaN FET sits in the high-frequency switching stage of AC-DC, DC-DC, and PFC converters that ultimately reside inside industrial, telecom, and datacenter SMPS systems. Key features include a 600 V drain-source rating, typical on-resistance of 70 mΩ at VGS=10 V, ultra-low Qrr approaching zero, very low gate charge (Qg), and a thermally efficient exposed-pad LSON-8 package. The combination enables 100 V/ns+ switching transitions, supporting converter switching frequencies in the 100 kHz–1 MHz range and shrinking magnetics by up to 5× versus 65 kHz Si-based designs. Architecturally, the IGLD60R070D1 pairs the GaN die with a Kelvin-source pin in the LSON-8-1 package, eliminating common-source inductance that would otherwise slow switching and cause gate ringing. Process-wise, the die is fabricated on a silicon substrate with a GaN-on-Si epitaxial stack, integrating a Schottky-mode p-GaN gate for normally-off operation. Performance-wise, total gate charge is typically a few nC, allowing the device to be driven from a small isolated gate-driver such as the 1EDI30I12AF or EiceDriver family. Typical applications include totem-pole PFC front ends, half-bridge and full-bridge LLC resonant converters for telecom/datacenter SMPS, high-frequency DC-DC bricks, USB-PD chargers and adapters, and industrial motor-drive auxiliary rails. The 600 V rating makes it well suited to 230 V AC rectified (≈325 V DC) or 380–400 V DC bus designs. When designing with this part, keep the gate-drive loop (gate-driver → RG → gate, and gate-driver return → Kelvin source) as small as possible to exploit the full switching-speed benefit; a 5–10 Ω series gate resistor is typical. Use a half-bridge with proper dead-time control and an isolated gate driver with 4 V/–1 V drive levels for CoolGaN™ to avoid false turn-on. This page synthesizes distributor pricing, drop-in CoolGaN™ alternatives, and practical layout guidance that go beyond the manufacturer datasheet's typical-application section.
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon
The Infineon IGLR70R200D2SXUMA1 is a 700V, 9.3A N-channel Gallium Nitride (GaN) enhancement-mode power transistor in a surface-mount PG-TSON-8-8 package with 200mΩ maximum on-resistance and 34W continuous power dissipation at Tc. It is part of Infineon's CoolGaN™ G5 high-voltage transistor family, built on 200 mm (8 inch) wafer production lines for tight tolerances and high product quality. A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap (WBG) power semiconductor that replaces conventional silicon MOSFETs and IGBTs in switched-mode power conversion. Compared to silicon, GaN transistors offer lower on-resistance per unit area, faster switching edges, zero reverse-recovery charge (Qrr), and smaller magnetic components. Within the semiconductor taxonomy, GaN HEMT sits between silicon MOSFET/IGBT and emerging silicon-carbide (SiC) MOSFETs, occupying the high-frequency, medium-to-high voltage (>600V) sweet spot. Key features include a 1.26nC total gate charge, 91pF output capacitance, 0.21pF reverse-transfer capacitance (Crss), 1.2V gate threshold typical, and a ThinPAK top-side cooling structure that pulls heat out through the PCB copper above the die. The normally-off, E-mode configuration means it behaves like a standard MOSFET from a gate-drive perspective, simplifying driver selection versus cascode GaN. Architecturally, the device uses Infineon's G5 CoolGaN technology, with a Schottky-gate structure and integrated ESD protection. Ultra-low Crss (0.21pF) suppresses the Miller-effect dv/dt-driven turn-on that plagues Si MOSFETs at 400V+ buses, allowing clean switching at multi-hundred-volt transitions without external snubbers. Typical applications include 65W to 140W USB-PD laptop and smartphone adapters, telecom rectifiers, industrial SMPS, totem-pole bridgeless PFC front-ends, and solar micro-inverters. The 700V rating provides substantial 230V AC line margin. Designers choose this device when they need a few hundred kHz switching frequency to shrink magnetics, combined with a single-package, low-inductance footprint for clean gate loops. When designing with this part, place the gate driver within 5mm of the gate pin and keep the power loop inductance below 5nH to preserve the GaN switching-edge advantage. The ThinPAK top-side cooling requires a thermal via-free copper pad directly above the die - not a standard PCB via field - to extract heat into the heatsink or inner copper plane. This page consolidates distributor pricing, drop-in alternatives, and practical design notes not available in the manufacturer datasheet alone, giving the working power-electronics engineer a single decision-ready reference.
IGLR70R270D2SXUMA1 - 700V GaN Transistor, 270mΩ CoolGaN G5 | Infineon
The Infineon IGLR70R270D2SXUMA1 is a 700V enhancement-mode Gallium Nitride (GaN) power transistor belonging to the CoolGaN™ G5 family, featuring a typical on-state resistance of 270 mΩ and continuous drain current of 7.3 A (Tc), packaged in a thermally-enhanced surface-mount PG-TSON-8-8 outline. A GaN FET (Gallium Nitride Field-Effect Transistor) is a wide-bandgap power semiconductor that uses a GaN-on-silicon heterojunction instead of silicon. Within the power-converter hierarchy, GaN FETs sit between silicon MOSFETs (slower, higher losses) and silicon carbide (SiC) MOSFETs (higher voltage, more expensive); CoolGaN™ specifically targets high-frequency, high-density switched-mode power supplies in the 100-700 V class. The defining characteristics of this part are its 700 V drain-source blocking voltage, 270 mΩ typical RDS(on), and ultrafast switching capability enabled by GaN's absence of a body diode and small gate/output charges. The PG-TSON-8-8 (also referred to as ThinPAK in Infineon literature) is a chip-scale, bottom-source package that minimises parasitic source inductance and provides low thermal resistance from junction to PCB. It is produced on fully-automated 200 mm (8-inch) wafer lines, which translates into tight production tolerances and consistent parametric distributions. Architecturally, CoolGaN™ G5 uses an integrated internal gate diode to simplify gate-drive design and to enable normally-off operation from a standard 0-12 V gate drive. The very low gate charge (Qg) and zero reverse-recovery charge (Qrr) permit hard-switched half-bridge operation at multi-hundred-kilohertz frequencies with substantially lower switching losses than silicon super-junction MOSFETs of similar RDS(on). Typical applications include high-density AC-DC flyback and totem-pole PFC converters, 400 V EV onboard chargers, telecom and server SMPS, USB-PD adapters above 100 W, and photovoltaic micro-inverters. The wide 700 V rating specifically targets universal-mains (85-264 VAC) rectified-bus operation up to 400 V bus rails. When designing with this part, place the gate driver within millimetres of the gate pin to contain the high di/dt loop, and route the source-return of the gate-driver supply directly to the bottom source pad to avoid common-source inductance that would otherwise slow switching and induce unwanted Vgs overshoot. This page consolidates distributor pricing, in-family CoolGaN drop-in alternatives, and practical layout notes that complement (but do not replace) the manufacturer datasheet.
IGLT65R025D2 - 650V CoolGaN G5 e-mode GaN Transistor 25mΩ | Infineon
The Infineon IGLT65R025D2 is a 650 V enhancement-mode gallium-nitride (GaN) power transistor from the CoolGaN™ G5 family, housed in a top-side cooled PG-HDSOP-16-8 (TOLT) surface-mount package. It combines a 650 V drain-source blocking rating with a typical on-state resistance of 25 mΩ and continuous drain current capability of 67 A at case temperature, delivering 219 W of power dissipation for high-density industrial switched-mode power supplies. A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap semiconductor switching device that operates as a normally-off, enhancement-mode transistor. Unlike silicon MOSFETs, GaN transistors use a two-dimensional electron gas channel on a GaN-on-Si substrate, providing much higher switching frequency capability, lower switching losses, zero reverse-recovery charge (Qrr), and superior figure-of-merit (FOM). GaN transistors belong to the wider power semiconductor taxonomy: GaN HEMT → wide-bandgap semiconductor → power discrete → discrete semiconductor. They are increasingly displacing silicon super-junction MOSFETs and IGBTs in high-frequency, high-efficiency conversion. The IGLT65R025D2 features ultra-low gate charge (Qg), a small output capacitance (Coss), and ultrafast switching edges enabled by the low parasitic source-inductance top-side cooled TOLT package. According to the Infineon datasheet, the part supports hard- and soft-switching half-bridge topologies including totem-pole PFC and high-frequency LLC. Compared with a silicon super-junction MOSFET of equivalent Rds(on), the GaN transistor typically reduces switching losses by 60-80% and enables switching frequencies above 1 MHz in compact adapter and charger designs. Typical applications include industrial and telecom SMPS, datacenter AC-DC front ends using totem-pole PFC, high-frequency LLC resonant converters, USB-PD chargers and adapters, and on-board EV charging modules. The wide 650 V rating provides ample margin for 380 VDC bus rails common in three-phase PFC outputs and 400 V EV architectures. When designing with this part, observe the strict gate-drive requirements of e-mode GaN: a tightly regulated 0-6 V drive with respect to source, low loop inductance (< 5 nH), and absence of a body diode mean dead-time must be controlled to avoid shoot-through. Layout the gate drive return directly across the source-kelvin pad to suppress ringing at dV/dt above 100 V/ns. This page synthesizes distributor pricing, drop-in cross-brand GaN equivalents, and practical design considerations not consolidated in the manufacturer datasheet, including pinout mapping for the PG-HDSOP-16-8 TOLT footprint.
IGLT65R035D2ATMA1 - 650V 47A CoolGaN™ G5 Transistor | Infineon
The Infineon IGLT65R035D2ATMA1 is a 650 V enhancement-mode GaN (gallium nitride) power transistor from Infineon's CoolGaN™ G5 TOLT family, housed in a top-side-cooled PG-HDSOP-16-8 surface-mount package. It is rated for 47 A continuous drain current at Tc and 154 W power dissipation, delivering a low on-resistance figure targeted at high-frequency power-conversion stages where silicon MOSFETs lose efficiency. The part is fabricated on Infineon's 200 mm GaN-on-Si production line and integrates an isolated gate structure that allows standard gate-drive ICs to be used without a negative bias supply. An enhancement-mode GaN HEMT (high-electron-mobility transistor) is a wide-bandgap power switch whose two-dimensional electron gas (2DEG) channel conducts only when a positive gate voltage is applied. Compared to silicon MOSFETs and IGBTs, GaN transistors offer lower gate charge (Qg), lower output charge (Qoss), zero reverse-recovery charge (Qrr), and switching speeds one to two orders of magnitude faster, enabling smaller magnetics, higher switching frequencies (100 kHz to >1 MHz), and higher system efficiency (>98% in well-designed LLC and totem-pole PFC stages). The CoolGaN™ G5 generation specifically targets industrial and telecom power-supply designs that require both high reliability and compact form factors. Key features of the IGLT65R035D2ATMA1 include 650 V drain-source blocking voltage, 47 A continuous drain current, 154 W maximum power dissipation, a Kelvin-source pin for low-inductance gate driving, and top-side cooling via a large exposed pad on the upper surface of the HDSOP-16-8 package. The top-cool configuration enables direct attachment to a heatsink or cold plate, removing thermal bottlenecks that constrain bottom-cooled DFN packages in planar layouts. Architecturally, the device uses a normally-off cascode-free GaN-on-Si HEMT with an integrated gate clamp, enabling robust behaviour during transients and simplified gate-drive requirements. The very low Qg × Rds(on) figure of merit (FOM) translates directly into reduced switching losses at high dV/dt, which is critical for hard-switched and soft-switched topologies such as totem-pole PFC, LLC, and active-clamp flyback converters used in server, telecom, and renewable-energy applications. Typical applications include 1 kW to 6 kW AC-DC power supplies using totem-pole PFC, high-density server and hyperscaler power-supply units (PSUs), telecom rectifier modules, solar inverters and energy-storage DC-DC stages, and industrial motor drives. The wide Vds rating also makes it suitable for 380-400 V DC-bus systems found in e-mobility charging and industrial automation. When designing with this part, ensure the gate-drive loop inductance is minimised by routing the gate and Kelvin-source traces as a tightly-coupled differential pair, and place a small ferrite bead or gate resistor (typically 5-15 ohm) close to the gate pin to dampen ringing. The top-side thermal pad should be soldered or thermally-attached to a heatsink; thermal-interface material (TIM) with high conductivity (>5 W/mK) is recommended for best results. This page synthesises distributor pricing, pin-compatible CoolGaN drop-in alternatives, and practical thermal and gate-drive design notes that are not collated in the manufacturer datasheet alone, helping engineers quickly evaluate the IGLT65R035D2ATMA1 for next-generation high-density power-conversion designs.
IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon
The Infineon IGT65R025D2ATMA1 is a 650 V, 70 A N-channel Gallium-Nitride (GaN) power transistor from Infineon's CoolGaN Gen2 (G5) family, packaged in a bottom-cooled surface-mount PG-HSOF-8 case. Designed for high-frequency high-density power conversion, it offers a typical on-state resistance around 25 mΩ at room temperature and supports continuous drain current of 70 A at case, with a power dissipation of 236 W (Tc). It enables higher switching frequencies than Si MOSFETs, reducing magnetics and bulk capacitance, and supports miniaturised form factors with reduced system BOM cost. A GaN power transistor (gallium-nitride HEMT) is a wide-bandgap semiconductor switching device in which an AlGaN/GaN heterostructure forms a high-electron-mobility two-dimensional electron gas channel. Compared with silicon MOSFETs and IGBTs at the same voltage class, GaN FETs deliver lower on-resistance per area, near-zero reverse-recovery charge (Qrr), and dramatically lower gate and output charge (Qg, Qoss), enabling hard-switched topologies from tens of kHz up to multi-MHz with very low switching loss. GaN belongs to the wide-bandgap semiconductor family alongside SiC, sitting above silicon in voltage, frequency, and efficiency capability. Key features of the IGT65R025D2 include enhancement-mode (normally-off) operation with a low gate-threshold around 1.0-1.5 V, a small package inductance from the source-down PG-HSOF-8 land pattern, and a Kelvin-source connection that suppresses gate-loop parasitic inductance. The bottom-cooled package routes heat directly into the PCB copper, allowing top-side PCB space to be used for snubbers, gate drivers, and signal traces. According to the manufacturer datasheet, the device is rated for 650 V drain-source blocking and supports avalanche-robust switching. The internal structure uses Infineon's Gen2 GaN-on-Si 200 mm platform, integrating gate protection, ESD cells, and a source-connected Kelvin pin for clean gate drive. The PG-HSOF-8 source-down footprint allows the user PCB copper to act as both electrical ground and primary thermal interface. Operation is characterised by very low Qg (typically single-digit nC) and Qoss in the tens-of-nC range, which directly enables soft-switched and hard-switched PFC, LLC, and totem-pole PFC topologies at 100-500 kHz. Typical applications include high-density telecom rectifiers (PFC + LLC stage), industrial SMPS with 380/400 V DC link, server and hyperscaler data-centre PSU modules, on-board EV chargers and DC/DC stages for traction auxiliary, solar inverters with high-frequency isolation stages, and motor drives for HVAC compressors. The 650 V rating provides ample margin across 230 V AC PFC outputs and 400 V DC-link rails. When designing with this part, place a 5-10 ohm gate resistor and keep the gate-drive loop tight to the gate-Kelvin source pins. Maintain Vgs within the absolute maximum ratings window (commonly -10 V to +18 V for GaN) and use a negative turn-off bias if the topology risks dv/dt-induced false turn-on. Ensure the PCB top-side keep-out under the device accommodates the bottom-side thermal copper. This page synthesises distributor stock and pricing, drop-in CoolGaN alternatives, application-focused design guidance, and parametric comparison data not found in the manufacturer datasheet, providing a one-stop engineering reference for the IGT65R025D2ATMA1.
IGW25N120H3FKSA1 - 1200V 25A TRENCHSTOP IGBT3 | Infineon
The Infineon IGW25N120H3FKSA1 is a 1200 V, 25 A single high-speed TRENCHSTOP IGBT3 in a TO-247-3-1 (PG-TO247-3-1) through-hole package, designed for the best compromise between switching and conduction losses. It is a Trench Field Stop IGBT featuring MOSFET-like turn-off switching behavior for low turn-off losses, with a 1200 V collector-emitter breakdown voltage and 50 A peak collector current capability. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor switch that combines the high-current drive capability of a bipolar transistor with the voltage-driven simplicity of a MOSFET. Within the broader power semiconductor hierarchy, an IGBT sits between MOSFETs (used at lower voltages) and thyristors (used at very high power). It belongs to the family of discrete power transistors, which themselves are a category of discrete semiconductors that includes MOSFETs, BJTs, and diodes. TRENCHSTOP IGBT3 is Infineon's third-generation IGBT technology, optimized for hard-switching topologies up to 1200 V. Key features of the IGW25N120H3FKSA1 include 1200 V VCE breakdown, 25 A nominal collector current (50 A pulsed), 326 W maximum power dissipation, and a typical VCE(sat) of 2.05 V. The Trench Field Stop structure provides low saturation voltage combined with fast switching, which is the key engineering trade-off in IGBT design. This device is also co-packed as a single IGBT (no anti-parallel diode), recommended for use in combination with an external SiC diode such as the IDH15S120 for high-frequency rectification. Typical applications include industrial inverters, uninterruptible power supplies (UPS), solar inverters, welding equipment, and induction heating. The high-speed switching characteristics make it especially suitable for resonant and hard-switching converters operating at 8-40 kHz where switching loss dominates. The TO-247 package provides robust mechanical strength and good thermal performance for through-hole mounting in power modules. When designing with the IGW25N120H3FKSA1, ensure adequate heatsinking for the 326 W power dissipation and respect the safe operating area (SOA) at high currents. Gate drive should be a 15 V turn-on with strong gate resistor selection to balance EMI and switching loss. This part is lead-free, RoHS compliant, and qualified for industrial-grade temperature ranges. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes beyond what is in the manufacturer datasheet.
IGW30N60H3FKSA1 - 600V 60A TRENCHSTOP IGBT3 TO-247 | Infineon
The Infineon IGW30N60H3FKSA1 is a 600 V, 60 A single TRENCHSTOP IGBT3 in a TO-247 (PG-TO247-3-1) through-hole package, rated at 187 W maximum power dissipation. Built on Infineon's third-generation Trench Field Stop technology, it targets high-frequency switching power topologies where a MOSFET-like turn-off signature is required to minimize switching losses. An IGBT (Insulated Gate Bipolar Transistor) is a minority-carrier power semiconductor that combines a MOSFET gate drive with a bipolar collector output stage. Within the discrete power semiconductor taxonomy, IGBTs sit between MOSFETs (faster, lower current) and thyristors (slower, higher current). The TRENCHSTOP IGBT3 family specifically optimizes the trade-off between conduction loss (VCE(sat)) and switching loss (Eoff), making it well-suited to hard-switched converters up to roughly 100 kHz. Key features include a 600 V collector-emitter breakdown voltage, a 60 A continuous collector current rating (TC = 25 °C), a low VCE(sat) typical of Trench Field Stop cells, and a square reverse-bias safe operating area (RBSOA) that is essentially independent of collector current up to 60 A. The part is co-packaged without an anti-parallel diode, simplifying designs where a separate ultrafast rectifier is preferred. The Trench Field Stop cell structure creates a thin, lightly-doped N- drift region terminated by a field-stop buffer, which simultaneously shrinks Eoff and tightens the fall-time distribution. This yields low turn-off losses and predictable switching behaviour across the full current range, simplifying snubber design and EMI filtering. Typical applications include uninterruptible power supplies (UPS), solar inverters, welding inverters, industrial motor drives, induction heating, and PFC boost stages operating from 230 V or 400 V rectified mains. Designers commonly pair the IGW30N60H3FKSA1 with gate driver ICs such as 1EDN7550B or 2ED2106S06F and a dedicated antiparallel diode. When designing with this part, gate-drive voltage must swing from 0 V (or negative bias) to +15 V to fully enhance the channel and minimize VCE(sat); a gate resistor of 5-20 Ω controls ringing and dV/dt-induced turn-on. PCB layout must keep the gate loop area minimal to preserve the MOSFET-like turn-off behaviour. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, with all parameters verified against Infineon's published sources.
IGW40N120H3FKSA1 - 1200V TrenchStop IGBT3 80A TO-247 | Infineon
The Infineon IGW40N120H3FKSA1 is a 1200 V, 40 A (collector current) high-speed single IGBT3 in a TO-247-3-1 through-hole package, leveraging Infineon's TRENCHSTOP™ technology for an optimum balance of switching and conduction losses. The device is rated for a pulsed collector current of 160 A, total power dissipation of 483 W, and operates over a junction temperature range of -40 °C to +175 °C, suiting it for hard-switched industrial power topologies. An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the voltage-driven, low-conduction-loss characteristics of a MOSFET gate with the high-current, low-saturation-voltage behavior of a bipolar junction transistor. IGBTs sit at the boundary between discrete power transistors and power modules and form the active switching element in the majority of medium-to-high power converters from 600 V to 1700 V. They belong to the broader power semiconductor hierarchy: transistor -> bipolar device -> IGBT -> discrete switching device -> power management building block. Key features of the IGW40N120H3FKSA1 include its Trench Field Stop cell structure with a gate charge of 185 nC, a MOSFET-like turn-off switching behavior that yields low Eoff, and a robust short-circuit withstand capability suited for inverter and welder duty cycles. The TO-247-3-1 package provides a tab that can be bolted to a heatsink for direct thermal extraction, while the through-hole leads support hand-soldering and wave-solder assembly. The part is qualified to industrial reliability standards and offers stable switching parameters across temperature, enabling repeatable EMI signature in production. Typical applications for this part include motor drives for industrial automation, solar inverters, uninterruptible power supplies (UPS), induction heating, welding equipment, and switched-mode power supplies operating at switching frequencies between 8 kHz and 40 kHz. The 1200 V collector-emitter breakdown rating gives it ample headroom for 380-480 V AC rectified bus rails up to 700 V DC link voltage. When designing with this IGBT, gate-drive resistor selection, desaturation (DESAT) short-circuit protection, and thermal management at the case-to-heatsink interface are the critical design considerations. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone. Engineers evaluating TRENCHSTOP™ third-generation devices for new designs or as second-source parts can use the comparison_table, design_notes, and selection_guide below.
IHW30N160R5XKSA1 - 1600V 30A RC-IGBT Diode | Infineon TO-247
The Infineon IHW30N160R5XKSA1 is a 1600 V, 30 A reverse-conducting IGBT (RC-IGBT) with monolithically integrated anti-parallel diode, housed in a TO-247-3 through-hole package. Built on Infineon's R5/RC-H5 trench-stop field-stop technology, it combines the main IGBT switch and its freewheeling diode in a single silicon die, eliminating the need for an external anti-parallel diode in half-bridge and single-switch topologies. The device is rated for 1600 V collector-emitter voltage (VCES), 60 A continuous collector current (IC at TC=25°C) and 263 W maximum power dissipation. Reverse-conducting IGBTs are a class of IGBTs that integrate a fast-recovery diode on the same die as the IGBT, optimized for hard-switching topologies where the body diode must conduct reverse current. They sit in the device hierarchy: IGBT -> reverse-conducting IGBT -> power semiconductor -> discrete semiconductor. RC-IGBTs reduce parasitic loop inductance, lower conduction losses from monolithic diode, and shrink the BOM by eliminating an external diode component. The R5 family is specifically engineered for the high-frequency, high-current demands of induction cooking resonant half-bridges. Key features include low VCE(sat) of 1.85 V at IC=30 A (per Newark listing), easy parallel switching thanks to positive temperature coefficient in VCE(sat), and a rugged short-circuit withstand capability. The TO-247-3 package provides industry-standard mounting compatibility and superior thermal performance, making it straightforward to replace discrete IGBT + diode pairs with a single part. Operating junction temperature spans -40°C to +175°C. The IHW30N160R5XKSA1 uses Infineon's RC-H5 reverse-conducting cell design with a thin-wafer field-stop layer, achieving a balanced trade-off between conduction losses, switching losses, and diode reverse-recovery softness. The monolithically integrated diode has matching current and voltage ratings to the IGBT section, simplifying gate-drive design. The result is a single part number that replaces two discrete components (IGBT + ultrafast diode) in many circuits, reducing PCB area and assembly cost. Typical applications include induction cooking appliances (resonant half-bridge inverter), microwave ovens, rice cookers, and other home appliance inverter stages that demand high-frequency switching at high currents. The wide VCES rating of 1600 V also supports industrial soft-start and welding inverter front-ends, where the integrated diode simplifies layout and reduces EMI from diode recovery transients. When designing with this part, ensure sufficient gate-drive voltage (typically 15 V) and gate resistance (10-47 ohm) to control switching speed. A snubber across collector-emitter is recommended for very high di/dt applications. The positive temperature coefficient of VCE(sat) makes thermal paralleling feasible for high-power designs.
IHW40N120R5XKSA1 - 1200V 40A RC-H5 IGBT | Infineon
The Infineon IHW40N120R5XKSA1 is a 1200 V, 40 A Reverse-Conducting (RC-H5) trench-field-stop IGBT with a monolithically integrated anti-parallel diode, housed in a TO-247-3 through-hole package. The device is rated for 1200 V collector-emitter blocking voltage and 80 A pulsed collector current, with a maximum power dissipation of 394 W. Optimized specifically for induction cooking, the R5 family combines very low VCE(sat) with soft switching behavior and an integrated freewheeling diode to simplify resonant converter design. An IGBT (Insulated-Gate Bipolar Transistor) is a voltage-controlled semiconductor switch that merges the high input impedance of a MOSFET gate with the low conduction loss of a bipolar junction transistor. The RC-H5 variant adds a monolithically integrated anti-parallel diode on the same silicon die, eliminating the need for an external flyback diode and reducing parasitic inductance in the commutation loop. In the broader hierarchy, an IGBT sits between power MOSFETs (used below ~600 V) and higher-voltage thyristors, occupying the mid-voltage (>600 V, <1700 V) switching converter niche. Key features include low VCE(sat) for reduced conduction loss, soft-switching-optimized trench-field-stop technology, integrated reverse-conducting diode, low EMI signature, and very tight parameter distribution for parallel operation. The TO-247-3 package provides industry-standard mounting, isolated tab, and a wide safety operating area (SOA) suitable for resonant half-bridge topologies. Infineon's recommended derating ceiling is 80% of maximum ratings for optimum lifetime. Typical applications include induction cooking appliances, resonant half-bridge converters, soft-switching topologies, induction heating inverters, and home appliances such as rice cookers and microwave ovens. The high current and voltage ratings also suit industrial induction heaters and welding power supplies where the integrated diode simplifies the heatsink layout. When designing with this part, ensure the gate driver can supply the IGBT's gate charge and the snubber layout minimizes stray inductance at the switching node. Use the integrated diode for resonant current paths; an external ultra-fast diode is generally not required but may improve reverse-recovery behavior in non-resonant stages.
IKB20N60H3ATMA1 - 600V 20A TRENCHSTOP™ IGBT3 D2PAK | Infineon
The Infineon IKB20N60H3ATMA1 is a high-speed 600 V, 20 A hard-switching TRENCHSTOP™ IGBT3 co-packaged with a free-wheeling diode in a surface-mount PG-TO263-3 (D2PAK) package, rated for 170 W of total power dissipation. It is qualified to 175°C virtual junction temperature and optimized for hard-switching topologies where the best compromise between switching and conduction losses is required. An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. IGBTs sit in the power-converter device hierarchy as: IGBT -> power transistor -> discrete semiconductor -> power management building block. They are the workhorse switches in hard-switched power conversion between roughly 400 V and 1700 V, where MOSFETs become inefficient and thyristors cannot be self-commutated. The TRENCHSTOP™ IGBT3 generation adds a thin-wafer trench field-stop cell that shrinks Eoff and VCE(sat) simultaneously versus the older NPT (Non-Punch-Through) generation. The headline characteristics of the IKB20N60H3ATMA1 include a 600 V collector-emitter breakdown rating, a 20 A nominal collector current (40 A pulsed per the distributor listings), and a co-packed single anti-parallel diode that handles the inductive free-wheeling current. Its key differentiator versus standard 600 V IGBTs is MOSFET-like turn-off behavior: a clean current tail with low Eoff, which lets designers raise switching frequency without paying a thermal penalty. The part also includes a diode with controlled diF/dt = 1000 A/μs reverse-recovery softness for low EMI in motor drives. Architecturally, the IGBT3 die uses a punch-through field-stop buffer layer and trench-gate cell, which keeps VCE(sat) low at high current density and reduces turn-off losses by roughly 20-30% versus the previous IKB20N60H2 generation. The co-packaged EmCon3 free-wheeling diode is a monolithically integrated emitter-controlled structure that matches the IGBT switching speed, enabling low reverse-recovery charge (Qrr) and therefore low switching losses in continuous hard-switched PWM. Typical applications include uninterruptible power supplies (UPS), photovoltaic string and micro-inverters, welding inverters, server and telecom SMPS power factor correction (PFC) stages, induction-heating resonant converters, and industrial motor drives from 0.5 kW to 5 kW. The D2PAK surface-mount package enables high-volume automated assembly while maintaining a creepage distance compatible with reinforced insulation when an RTV-filled PCB slot is provided under the tab. When designing with this part, observe the maximum 175°C virtual junction temperature and derate switching losses against the actual case-to-ambient thermal resistance of the PCB footprint. The exposed tab must be soldered to a minimum copper area (typically ≥ 6 cm² on FR-4 with 2 oz copper) to keep RthJA below 40 K/W at full load. A gate drive of +15 V Vge with a -5 V to -8 V negative turn-off bias is recommended to prevent parasitic turn-on in bridge topologies. This page synthesizes distributor pricing, drop-in alternatives in the same D2PAK footprint, and practical thermal/layout design notes that go beyond the headline datasheet block diagram.
IKB30N65EH5ATMA1 - 650V 30A TRENCHSTOP 5 IGBT, D2Pak | Infineon
The Infineon IKB30N65EH5ATMA1 is a 650 V, 30 A TRENCHSTOP 5 high-speed switching IGBT co-packed with a full-rated RAPID 1 anti-parallel diode, delivered in a surface-mount PG-TO263-3 (D2Pak) package. It features a trench field-stop cell design, 188 W maximum power dissipation, and a collector current rating of 55 A pulsed, making it suitable for hard-switching topologies up to several tens of kilohertz. What is an IGBT? An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor that combines the high input impedance and fast switching of a MOSFET with the low conduction loss of a bipolar transistor. It belongs to the power semiconductor family, sitting between MOSFETs (used at lower voltages and higher frequencies) and thyristors (used at very high currents). IGBTs are the workhorse devices in modern power electronics for voltages from 600 V to 6.5 kV, bridging the MOSFET and thyristor hypernyms and forming part of the broader semiconductor taxonomy. Key features of the IKB30N65EH5ATMA1 include low VCE(sat) for reduced conduction loss, soft switching behavior that minimizes EMI, integrated anti-parallel diode for half-bridge simplicity, and a wide operating temperature range of -40C to +175C. The TRENCHSTOP 5 thin-wafer technology reduces both turn-on and turn-off losses, enabling higher switching frequencies and smaller magnetics in the overall converter design. Architecturally, the device uses Infineon's fifth-generation trench field-stop cell with an optimized emitter structure, providing a tight trade-off between VCE(sat) and Eoff. The co-packaged RAPID 1 diode eliminates the need for an external anti-parallel diode in half-bridge and inverter legs, simplifying PCB layout and reducing parasitic inductance that can otherwise cause voltage overshoot during diode reverse recovery. Typical applications include uninterruptible power supplies (UPS), solar inverters, welding equipment, industrial motor drives, and power factor correction (PFC) stages. The 650 V blocking voltage comfortably supports 400 V rectified mains and 480 V industrial bus systems with adequate derating margin. When designing with this part, ensure the gate driver can supply the recommended +15 V / -8 V gate drive and that the PCB layout minimizes stray inductance in the power loop to avoid over-voltage spikes during switching. Thermal management must account for up to 188 W dissipation in the D2Pak package, which typically requires a substantial copper pad area or external heatsink.
IKD04N60RATMA1 - 600V 8A RC-Drives IGBT w/ Diode | Infineon
The Infineon IKD04N60RATMA1 is a 600 V, 8 A trench Field Stop IGBT with an integrated anti-parallel diode, housed in a surface-mount PG-TO252-3 (DPAK) package with 75 W of power dissipation. It belongs to Infineon's RC-Drives IGBT technology family, which has been developed as a cost-optimized solution for sensitive consumer drives and small appliance markets. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that combines the high-input impedance of a MOSFET gate with the low conduction loss of a bipolar transistor. IGBTs occupy the middle ground in the power-switch hierarchy between MOSFETs (best for low-voltage, high-frequency) and thyristors (best for very high power). They are commonly used in motor drives, induction heating, and switched-mode power supplies operating at 400 V to 1200 V bus voltages. The integrated co-packaged diode provides a freewheeling path for inductive loads, eliminating the need for an external anti-parallel rectifier. Key features include a low saturation voltage VCE(sat) optimized for low switching losses, a robust short-circuit ruggedness, and a gate threshold voltage compatible with standard 15 V gate-drive signals. The PG-TO252-3 (DPAK) package provides a low thermal-resistance path via its exposed metal tab, enabling surface-mount assembly while still dissipating up to 75 W when properly soldered to a sufficient copper land area. The part is qualified for consumer and white-goods applications and is widely used in appliance motor control. The RC-Drives technology uses Infineon's field-stop trench cell design, which shrinks the die area while preserving low conduction loss. This part is specifically targeted at hard-switching topologies in continuous-conduction mode, such as variable-frequency drives (VFD) for washing machines, dishwashers, HVAC fans, and small industrial pumps. The integrated diode also reduces BOM cost and PCB area in half-bridge and three-phase inverter stages. Typical applications include BLDC motor control in refrigerators and fans, PFC + inverter stages in air-conditioner outdoor units, low-power solar micro-inverters, and induction-cooking assist circuits. The 8 A continuous rating matches sub-1 HP (sub-750 W) motor drives at 230 V AC rectified bus voltage. Designers benefit from a single part number covering both the switching transistor and the freewheeling diode, simplifying sourcing and reducing assembly errors. When designing with this part, ensure the PCB copper pad under the tab is sized for the expected dissipation. A 1 oz copper, 1 square inch pad keeps junction-to-ambient thermal resistance around 50 C/W, supporting continuous operation at moderate loads. Always add a gate resistor of 10 to 47 ohm to limit ringing, and confirm the gate driver can sink enough current to rapidly discharge the Miller capacitance at turn-off. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon
The Infineon IKD06N60RATMA1 is a 600 V, 12 A TRENCHSTOP Reverse Conducting (RC) IGBT3 with an integrated anti-parallel diode, housed in a PG-TO252-3 (DPAK) surface-mount package. It combines a 600 V collector-emitter breakdown rating with a 12 A continuous collector current and 100 W maximum power dissipation, making it a cost-optimized hard-switching platform for sensitive consumer drive applications. The integrated reverse-conducting monolithic diode eliminates the need for an external freewheeling diode, reducing BOM count and parasitic inductance in the switching loop. An IGBT (Insulated-Gate Bipolar Transistor) is a minority-carrier power semiconductor that combines the high-current drive capability of a bipolar transistor with the voltage-controlled gate of a MOSFET. In the reverse-conducting variant (RC-IGBT), the anti-parallel diode is monolithically integrated into the same silicon die, providing a single-chip solution for half-bridge and totem-pole switching stages. The IGBT sits in the power semiconductor hierarchy: IGBT -> power transistor -> discrete semiconductor -> active component, and serves as the workhorse for medium-power (kW range) switching applications operating from 400 V to 1200 V DC bus rails. Key features include TRENCHSTOP IGBT3 cell technology, monolithic reverse-conducting diode, low VCE(sat) for reduced conduction loss, and a robust short-circuit withstand capability. The field-stop layer minimizes tail current during turn-off, allowing switching frequencies in the 4 kHz to 20 kHz range typical of small motor drives. The PG-TO252-3 (DPAK) package delivers an industry-standard surface-mount footprint with a metal tab that serves as the collector terminal and provides direct PCB heatsinking. Typical applications include low-power motor drives (drain pumps, fans, mixer motors), washing-machine universal-motor controllers, air-conditioner compressor inverters, and small home-appliance SMPS PFC stages. The wide 600 V rating provides sufficient margin for 230 VAC rectified-bus applications, while the 12 A rating supports motor outputs in the 100 W to 750 W range. When designing with this device, ensure adequate copper area on the DPAK tab for heatsinking and respect the dv/dt limits during turn-off to avoid parasitic turn-on of the high-side device in half-bridge configurations. A gate resistor of 10-47 ohm is typically recommended for EMI control.
IKD10N60RC2ATMA1 - 600V 10A RC2 IGBT w/ Diode | Infineon
The Infineon IKD10N60RC2ATMA1 is a 600 V, 10 A TRENCHSTOP RC2-series IGBT with monolithically integrated reverse-conducting diode, housed in a surface-mount PG-TO252-3 (DPAK) package. It combines a Trench Field Stop IGBT cell with a co-packed anti-parallel diode optimized for hard-switching topologies, delivering 18.8 A pulsed collector current and 79 W maximum power dissipation. An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor that combines the high-input-impedance, voltage-driven gate of a MOSFET with the low-conduction-loss output stage of a bipolar transistor. As a discrete single-device solution, it sits in the power-management hierarchy between signal-level logic ICs and high-power modules, enabling efficient switching in the 600 V class for industrial and consumer applications. The RC2 family integrates the freewheeling diode inside the same silicon die, eliminating the need for an external anti-parallel diode and reducing parasitic inductance. Key features include 600 V collector-emitter breakdown voltage, 10 A continuous DC collector current (I_C nom), 18.8 A pulsed collector current, low V_CE(sat) typical values in the 1.5 V range for reduced conduction loss, and a monolithically integrated diode co-packed for hard-switched bridge topologies. The trench field-stop cell technology delivers a tight trade-off between V_CE(sat) and switching losses, suiting it to 10-30 kHz switching frequencies typical of motor drives and SMPS. Typical applications include low-power motor drives (drum motors, small fans, appliance pumps), induction-cooking and microwave-oven inverters, PFC boost switches in SMPS, welding-machine primary stages, and uninterruptible power supply (UPS) inverter legs. The PG-TO252-3 surface-mount package enables high-density PCB designs and is compatible with automated SMT assembly. When designing with the IKD10N60RC2, gate-drive considerations are critical: a +15 V gate-emitter voltage is recommended to fully enhance the IGBT, and a gate resistor in the 10-47 ohm range controls switching speed and dv/dt. Thermal management should assume that the integrated diode contributes additional conduction loss in inverter legs, and the PG-TO252-3 footprint requires adequate copper pour on the drain tab to keep junction temperature below 175 C. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IKD15N60RATMA1 - 600V 30A Trench Field-Stop IGBT | Infineon
The Infineon IKD15N60RATMA1 is a 600V, 30A trench field-stop IGBT with integrated anti-parallel diode, housed in a surface-mount PG-TO252-3 (DPAK) package. It combines a 1.65V low-saturation VCE(sat) with 250W total power dissipation and nanosecond-class switching (16ns typical fall time), optimized for cost-sensitive consumer drives and appliance motor control. An IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor that merges the high-input-impedance, voltage-driven gate of a MOSFET with the low conduction loss of a bipolar junction transistor. Within the power-device hierarchy, IGBTs sit between MOSFETs (used at lower voltages/higher frequencies) and thyristors (used at very high currents), making them the dominant switch for 400V-1200V medium-power conversion. The Trench Field-Stop cell architecture used in the IKD15N60R family shrinks die area per ampere while keeping tail-current low during turn-off. Key features include 600V collector-emitter breakdown, 30A continuous DC collector current at TC=100C, 2.1V VCE(sat) at 15V VGE and 15A IC, 90nC typical gate charge, and an integrated reverse-conducting diode qualified for hardswitched bridge legs. The PG-TO252-3 footprint is the industry-standard DPAK land pattern, allowing direct replacement of competing 600V-class single-IGBT discretes in the same copper pad layout. Typical applications include permanent-magnet synchronous motor (PMSM) and brushless DC (BLDC) drives in washing machines, refrigerator compressors, fans, pumps, and small industrial inverters up to ~3 kW. Infineon's RC-Drives technology targets consumer-grade price points without sacrificing the ruggedness needed for inductive loads. For reliable operation, keep the gate-emitter drive at 15V with a 10 ohm gate resistor, place a 100nF CGE Miller clamp close to the gate pin, and ensure the exposed tab is soldered to a copper area of at least 100 mm^2 to keep junction temperature below 175C. According to the manufacturer datasheet, thermal resistance junction-to-case is 0.5 C/W, so derate from 250W at TC=25C toward lower dissipation at higher case temperatures. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical switching-layout notes not found in the manufacturer datasheet alone, helping engineers source a second-source part or evaluate substitutes quickly.
IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon
The Infineon IKD15N60RFATMA1 is a 600 V, 15 A TRENCHSTOP IGBT3 with an integrated anti-parallel diode, housed in a 3-pin (2 + tab) PG-TO252-3 (DPAK) surface-mount package and rated for 250 W maximum power dissipation. Built on Infineon's field-stop trench technology, this RC-Drives Fast variant targets hard-switching consumer drive applications such as washing machines, refrigerator compressors, fans, and small industrial motor drives. The integrated co-pack diode eliminates the need for an external freewheeling rectifier, simplifying the BOM and reducing reverse-recovery losses in the inverter stage. An IGBT (Insulated-Gate Bipolar Transistor) is a power semiconductor that combines the high input impedance of a MOSFET gate with the low conduction (saturation) loss of a bipolar junction transistor. Within the broader taxonomy, IGBTs sit between power MOSFETs (better for low-voltage/high-frequency) and thyristors (better for very high voltage/current), making them the dominant switch for 400 V to 1200 V motor drives, UPS systems, and induction-heating converters. The TRENCHSTOP IGBT3 generation specifically optimizes the VCE(sat)/Eoff trade-off curve compared with the older IGBT2 generation, yielding lower switching losses in hard-switched 600 V bridge topologies. Key features include a 600 V collector-emitter breakdown voltage (VCES), 30 A continuous collector current (IC at TC = 25 C), a typical VCE(sat) of around 1.5 V at nominal current, and a maximum operating junction temperature of 175 C. The integrated emitter-controlled diode supports reverse-conduction operation in half-bridge and full-bridge inverters, removing the need for a separate ultrafast rectifier across the IGBT. The DPAK (TO-252-3) package is qualified for high-volume surface-mount manufacturing and offers a tab that doubles as the collector terminal, simplifying PCB layout and thermal sinking to a copper pad. In typical application, the IKD15N60RF is used in a 3-phase IGBT inverter stage supplied by a rectified 230 VAC or 310 VDC bus, switching at 4 kHz to 20 kHz to drive a 3-phase induction or BLDC motor. The integrated anti-parallel diode simplifies the bridge layout and reduces dead-time requirements. Compared with discrete IGBT + diode solutions, the co-pack version reduces component count by 33% in a 3-phase bridge and improves thermal coupling between the IGBT and its diode, enabling smaller heatsinks in cost-sensitive consumer appliances. When designing with this part, ensure that the gate drive voltage reaches at least 15 V during turn-on (VGE(th) is typically 5.5 V; full enhancement requires 15 V) and that the layout keeps the gate loop inductance below 30 nH. The tab is electrically connected to the collector, so a thermal interface material or solder-filled thermal via under the tab is required to keep Tj below 150 C at full 15 A load. Avoid paralleling these parts without external gate-source balancing resistors, as the VCE(sat) tolerance can cause current imbalance. This page synthesizes distributor pricing, pin-compatible drop-in alternatives (same Infineon family, then cross-brand options), and practical thermal and gate-drive design notes not found in the manufacturer datasheet, with a focus on the consumer appliance motor-drive market segment that this IKD15N60RF was developed to serve.
IKN06N60RC2ATMA1 - 600V 8A RC2 Reverse-Conducting IGBT | Infineon
The Infineon IKN06N60RC2ATMA1 is a 600 V, 8 A reverse-conducting IGBT from Infineon's RC2 (Reverse Conducting 2) technology family, housed in a surface-mount PG-SOT223-3 package. It integrates a monolithically co-packed anti-parallel diode within the IGBT die, providing a single-chip solution for half-bridge and hard-switched power stages. The device is rated for 8 A continuous collector current and 7.2 W maximum power dissipation, optimized for cost-effective medium-frequency switching. An RC (Reverse Conducting) IGBT is a single-die power switch that combines the IGBT transistor and a freewheeling diode on the same silicon substrate, eliminating the need for an external anti-parallel diode. This integration reduces parasitic inductance, simplifies PCB layout, lowers BOM cost, and improves reliability by removing the diode-to-IGBT bond-wire connection that often fails in discrete designs. RC-IGBTs are widely used in home-appliance motor drives, induction cooking, and welding inverters where cost-sensitive, high-volume power conversion is required. The IKN06N60RC2ATMA1 features a typical VCE(sat) of 2 V at rated current, low switching losses optimized for hard-switched topologies, and a 600 V collector-emitter breakdown voltage that provides 100 V safety margin above standard 400 V rectified mains. The monolithically integrated diode delivers robust reverse-recovery behavior matched to the IGBT's switching characteristics, eliminating the diode selection step from the design cycle. The device is also known as part of Infineon's 600 V RC2 product family. Typical applications include induction cooking inverter half-bridges, low-power motor drives for pumps and fans, electronic ballasts for fluorescent and HID lighting, and small uninterruptible power supplies (UPS). The 8 A current rating and 600 V blocking voltage suit 1-phase rectified mains (220-240 VAC) and 3-phase 400 V rectified bus designs. The PG-SOT223-3 surface-mount package supports high-volume automated assembly while providing sufficient thermal performance for these moderate-power applications. When designing with this device, ensure adequate copper area on the PCB for the tab to act as a heat spreader. The gate drive should use a 15 V supply with a gate resistor in the 10-47 ohm range to control switching speed and EMI. The integrated diode's reverse-recovery characteristics are tuned for hard switching, so this part is not recommended for zero-voltage-switching (ZVS) or zero-current-switching (ZCS) resonant topologies. This page synthesizes distributor pricing, SOT-223 drop-in alternatives, and practical thermal design notes not found in the standalone manufacturer datasheet, helping engineers shorten selection time and avoid common design pitfalls in cost-sensitive 600 V switching applications.
IKP15N60T - 600V 15A TRENCHSTOP IGBT TO-220 | Infineon
The Infineon IKP15N60T is a 600 V, 15 A hard-switching TRENCHSTOP™ and Fieldstop IGBT3 copacked with a full-rated free-wheeling Emitter Controlled HE anti-parallel diode, housed in a TO-220 (PG-TO220-3-1) through-hole package with very low typical VCE(sat) of 1.5 V and a maximum junction temperature of 175 °C. It is qualified to withstand short-circuit operation for 5 microseconds and delivers significant static and dynamic performance gains versus prior-generation NPT IGBTs due to the combination of trench-cell and field-stop layers. The device targets cost-sensitive, hard-switched topologies that demand a clean co-packed diode and a robust thermal envelope. An IGBT (Insulated Gate Bipolar Transistor) is a voltage-controlled bipolar power semiconductor that combines the high-input-impedance gate drive of a MOSFET with the low conduction loss of a bipolar transistor. Within the power semiconductor hierarchy, the IGBT sits between MOSFETs and thyristors: above MOSFETs for high-voltage (>400 V) applications where Rdson losses become excessive, and below thyristors where latching and conduction are desired. The "TRENCHSTOP" generation uses an etched-gate trench structure to improve channel density and reduce VCE(sat), while the "fieldstop" buffer minimises tail switching loss, which together push switching energies down by 40-50% versus planar PT devices. The co-packed EmCon HE freewheeling diode (HE = high efficiency) is reverse-recovery-soft, which reduces EMI and dv/dt stress on the companion switch. Key features include: VCE(sat) of 1.5 V typical at rated current, VCE of 600 V (collector-emitter blocking), IC of 15 A continuous (DC collector current 26-30 A pulsed), anti-parallel EmCon HE diode rated to match the IGBT, 5 microsecond short-circuit withstand time, 175 °C maximum operating junction temperature, and 130 W maximum power dissipation. The TO-220 package provides a tab that serves as an exposed heatsink surface and a single mounting hole for a clip or screw. The IKP15N60T is intended for hard-switched converter topologies at switching frequencies in the 4-30 kHz band. Typical deployments include uninterruptible power supplies (UPS), solar inverters, induction heating, and welding machine primary-side switches. The 600 V class rating leaves comfortable margin above rectified 230 V AC (peak 325 V DC) and 400 V rectified three-phase rails (≈565 V DC), allowing non-critical snubbers to be simplified. The 5 microsecond short-circuit withstand rating supports industrial motor drives that must survive transient overload conditions per IEC 60134-1. For the design engineer, the critical decision is whether a co-packaged diode is wanted. The IKP15N60T includes the diode internally; bare IGBTs of the same generation (e.g. IGB15N60T, if available separately) require an external anti-parallel rectifier. The TO-220 package is footprint-compatible with virtually every discrete 600 V IGBT and MOSFET in the industry, simplifying PCB layout. Power dissipation must be checked: at 15 A and VCE(sat) of 1.5 V, conduction loss is ≈22.5 W; a clip-on or PCB-mount heatsink is mandatory. This page synthesizes current distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select, source, and lay out the IKP15N60T with confidence.