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K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung
K4A8G085WC-BIWE

K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung

The Samsung K4A8G085WC-BIWE is a high-performance DDR4 SDRAM memory IC organized as 1G x 8 bits, providing 8 Gb (1 GB) of volatile storage. Operating at a data rate of 3200 Mbps (DDR4-3200), it delivers high bandwidth with low power consumption, requiring a nominal 1.2V supply. The device is housed in a 78-ball FBGA package, designed for surface-mount assembly, and supports an industrial temperature range of -40°C to +95°C, making it suitable for demanding environments. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower voltage (1.2V vs 1.5V), and improved reliability. DDR4 is a key component in computing systems, servers, and embedded applications, where it serves as the main system memory or as a buffer for high-speed data processing. Key features of the K4A8G085WC-BIWE include a density of 8 Gb, an organization of 1G x 8, and a speed grade of 3200 Mbps. The device operates from a 1.2V power supply, with a separate VDDQ of 1.2V, and supports on-die termination (ODT) and programmable read/write latencies. It also features auto-refresh and self-refresh modes for power saving, and a burst length of 8 (BL8) with burst chop (BC4) support. The industrial temperature range (-40°C to +95°C) ensures reliable operation in harsh conditions, such as automotive and industrial control systems. Technically, the K4A8G085WC-BIWE is built on Samsung's advanced DRAM process technology, offering high cell density and low power consumption. It incorporates a pseudo-open-drain (POD) interface for the data bus, which reduces I/O power. The device supports a 1.2V supply with an on-chip voltage regulator for the core, and it includes a temperature-compensated self-refresh (TCSR) feature to adjust refresh rates based on temperature, enhancing reliability. The 78-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm. Typical applications include industrial controllers, embedded computing modules, networking equipment, and data storage systems. The wide temperature range and high speed make it ideal for use in rugged environments where standard commercial-grade memory would fail. It is also used in firmware boot, data logging, and as a buffer in high-speed communication systems. When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. The DDR4 interface requires careful PCB layout to maintain signal integrity, including matched trace lengths and controlled impedance. Also, follow the JEDEC DDR4 standard for termination and reference voltage (VREF) generation.

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K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB

K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung

The Samsung K4A8G165WB-BCPB is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a speed of 2133 Mbps (PC4-17000) with a supply voltage of 1.2V. It is housed in a 96-ball FBGA package (TFBGA-96) and is designed for a wide range of computing and embedded applications requiring high bandwidth and low power consumption. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power compared to DDR3. It uses a 1.2V supply, reducing power consumption by up to 40% over DDR3, and supports data rates from 1600 to 3200 Mbps. DDR4 is the industry standard for modern PCs, servers, and embedded systems, providing improved signal integrity and reliability. Key features include a burst length of 8 (BL8) with both sequential and interleave burst types, on-die termination (ODT), and programmable CAS latency. The device supports a temperature range of 0°C to 85°C (commercial) and is available in a 96-ball FBGA package with a 0.8mm ball pitch. The B-die variant is known for its overclocking potential and low latency, making it popular among enthusiasts. Technically, the K4A8G165WB-BCPB uses a 20nm-class process technology, enabling high density and low power. It features a 16n prefetch architecture, which allows high data rates while maintaining internal clock speeds. The device includes auto refresh and self refresh modes, supporting power-saving states. The 1.2V supply and 1.14V to 1.26V range ensure compatibility with standard DDR4 power rails. Typical applications include high-performance computing, servers, networking equipment, and embedded systems such as industrial PCs and automotive infotainment. Its x16 organization is ideal for applications requiring high bandwidth per chip, such as graphics cards and network processors. When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet for signal integrity. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.

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K4A8G165WB-BCTD - 8Gb DDR4 SDRAM x16 | Samsung
K4A8G165WB-BCTD

K4A8G165WB-BCTD - 8Gb DDR4 SDRAM x16 | Samsung

The Samsung K4A8G165WB-BCTD is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a speed grade of PC4-2666 (2666 Mbps/pin). It is housed in a 96-ball FBGA package and operates from a 1.2V supply, delivering the bandwidth and power efficiency required for modern computing and embedded systems. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher bandwidth and lower power consumption compared to DDR3. It achieves data rates up to 3200 Mbps/pin while operating at 1.2V, a 20% reduction from DDR3's 1.5V. DDR4 is the industry standard for main memory in servers, desktops, laptops, and increasingly in embedded applications such as networking and industrial computing. Key features include a 512M x 16 organization, 2666 Mbps data rate, 1.2V power supply, and support for JEDEC-standard features like on-die termination (ODT), ZQ calibration, and auto-precharge. The device also includes a data mask function and supports a temperature range of 0°C to +95°C (TC), making it suitable for a wide range of commercial and industrial environments. The K4A8G165WB-BCTD is built on Samsung's advanced B-die process technology, which is known for its high speed and low latency. The 96-ball FBGA package provides excellent signal integrity and thermal performance, while the 1.2V operation reduces power consumption by up to 25% compared to DDR3, making it ideal for power-sensitive applications. Typical applications include high-performance computing, servers, networking equipment, and embedded systems that require high memory bandwidth and capacity. The device is also used in graphics cards, set-top boxes, and automotive infotainment systems. When designing with this component, ensure proper decoupling with 0.1uF and 1uF capacitors near the power pins, and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a reference voltage (VREF) of 0.6V.

USD $37.00 联系我们
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE

K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung

The Samsung K4A8G165WB-BCWE is an 8Gb DDR4 SDRAM organized as 512M x 16, operating at 3200 Mbps data rate from a 1.2 V supply, housed in a 96-ball FBGA (96FBGA) package rated for 0C to +85C operation. DRAM (Dynamic Random Access Memory) is the mainstream volatile working memory used in virtually every computing system, sitting below CPU caches in speed but far above storage in bandwidth. DDR4 SDRAM, the fourth generation of Double Data Rate synchronous DRAM defined by the JEDEC DDR4 standard, doubles the internal prefetch of DDR3 to 8n, lowers the operating voltage from 1.5V to 1.2V, and increases bank groups to improve effective bandwidth. Within the system hierarchy, DRAM sits between the processor and non-volatile storage (NAND flash), providing the primary working set for operating systems and applications. Key features of this device include the 8 Gb B-die architecture in a x16 organization, a 3200 Mbps/pin data rate yielding up to 6.4 GB/s per device, and 1.2 V core operation that consumes up to 25% less power than comparable DDR3 parts. The x16 bus width simplifies interface routing for embedded controllers, and the commercial 0C to +85C temperature grade suits consumer, networking, and industrial-computing environments. Technically, the WB B-die uses an 8n prefetch DDR4 core with bank-group architecture, on-die termination (ODT), DLL for output timing, and programmable CAS latency per the DDR4 JEDEC interface. Power management features include a dedicated VPP rail for word-line boosting and self-refresh modes for standby power reduction. Typical applications include embedded controller memory subsystems, networking and communication equipment line cards, industrial PCs, set-top boxes, smart TVs, and desktop/commercial computing modules where a soldered-down x16 DDR4 device is preferred over a DIMM module. When designing with this device, the memory controller must support DDR4-3200 timing at 1.2 V, and signal integrity demands length-matched routing, on-die termination tuning, and VREF training per the controller calibration sequence. This page synthesizes distributor pricing, pin-compatible Samsung family alternatives, comparison tables, and practical DDR4 layout guidance not found in a single manufacturer datasheet.

USD $6.25 有现货
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC

K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung

The Samsung K4A8G165WB-BIRC is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a speed of 2400 Mbps (PC4-19200) with a supply voltage of 1.2V. It is housed in a 96-ball FBGA package, designed for space-constrained applications requiring high memory density and bandwidth. This B-die DDR4 device supports a temperature range of -40°C to +95°C, making it suitable for industrial and automotive environments. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power consumption compared to DDR3. It achieves data rates up to 3200 Mbps and operates at 1.2V, reducing power by 25% compared to DDR3's 1.5V. DDR4 is a critical component in modern computing, networking, and embedded systems, providing the high bandwidth needed for processors, AI accelerators, and high-speed data processing. Key features of the K4A8G165WB-BIRC0 include a 2400 Mbps data rate, 8Gb density, and a 512M x 16 organization. The device supports on-die termination (ODT), programmable read/write latency, and burst length of 8, ensuring signal integrity and efficient data transfer. Its 96-ball FBGA package offers a compact footprint, and the -40°C to +95°C operating temperature range enables use in harsh environments. Technically, this DDR4 SDRAM utilizes Samsung's advanced B-die process technology, which provides excellent timing margins and overclocking headroom. The device features a 1.2V core and I/O supply, with an on-chip ECC option (not available on this variant) and a pseudo-open-drain interface. It supports a burst length of 8 and a burst chop of 4, with programmable CAS latency (CL) values of 15, 16, and 17 cycles at 2400 Mbps. Typical applications include high-performance computing, servers, networking equipment, industrial automation, and automotive infotainment systems. Its high density and speed make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-resolution graphics. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a reference voltage (VREF) for optimal operation.

USD $32.50 有现货
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
K4A8G165WB-BIRC

K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps

The Samsung K4A8G165WB-BIRC is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a speed of 2400 Mbps with a 1.2V supply voltage. It is housed in a 96-ball FBGA package, designed for space-constrained applications requiring high memory density and bandwidth. This device supports a wide temperature range of -40°C to +95°C, making it suitable for industrial and automotive environments. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) to reduce power consumption, and features higher density and improved signal integrity. DDR4 is a key component in computing systems, networking equipment, and embedded applications, providing the main memory for processors and controllers. Key features of the K4A8G165WB-BIRC include a density of 8Gb, a 16-bit I/O interface, and a data rate of 2400 Mbps. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes on-die termination (ODT) for improved signal quality. It also features programmable read and write latencies, and supports burst lengths of 8 and 16, enabling efficient data transfers. The K4A8G165WB-BIRC utilizes Samsung's advanced B-die process technology, which offers lower power consumption and higher speed grades compared to previous generations. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for high-density PCB designs. The device is designed to meet JEDEC DDR4 standards, ensuring compatibility with a wide range of controllers and systems. Typical applications include high-performance computing, servers, networking switches, and industrial automation systems. The wide temperature range and high reliability make it ideal for mission-critical applications where data integrity is paramount. The 1.2V operation reduces power consumption, making it suitable for power-sensitive designs. When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The DDR4 interface requires careful PCB layout to maintain signal integrity, including impedance matching and length matching for data and address lines. Refer to the Samsung datasheet for detailed timing and layout guidelines.

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K4A8G165WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G165WB-BIWE

K4A8G165WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung

The Samsung K4A8G165WB-BIWE is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a speed grade of 3200 Mbps (PC4-25600). It is housed in a 96-ball FBGA package and operates from a 1.2V supply, delivering the bandwidth and reliability required for modern computing and embedded systems. This device supports a wide temperature range of -40°C to +95°C, making it suitable for industrial and automotive applications. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It is the successor to DDR3 and offers higher speed, lower voltage (1.2V vs 1.5V), and improved power efficiency. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded devices. Key features of the K4A8G165WB-BIWE include a density of 8Gb, a 16-bit I/O width, and a data rate of 3200 Mbps. The device supports on-die termination (ODT), programmable read/write latency, and burst lengths of 8 and 16. It also features auto-refresh and self-refresh modes for power saving. The 96-ball FBGA package ensures a compact footprint and excellent thermal performance. Technically, the K4A8G165WB-BIWE is built on Samsung's advanced DRAM process technology, offering high cell density and low power consumption. It complies with JEDEC DDR4 standards, ensuring interoperability with a wide range of memory controllers. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on die temperature, enhancing reliability in harsh environments. Typical applications include high-performance computing, networking equipment, industrial automation, and automotive infotainment systems. Its wide temperature range and high speed make it ideal for edge computing and AI inference platforms where memory bandwidth is critical. When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Also, follow the JEDEC DDR4 layout guidelines for signal integrity, especially for high-speed data lines.

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K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB

K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung

The Samsung K4A8G165WC-BCPB is an 8 Gb DDR4 SDRAM organized as 512M x 16, operating at the DDR4-2133 data rate on a 1.2 V supply (1.14 V to 1.26 V operating range), packaged in a 96-ball FBGA (TFBGA) surface-mount package. It is built on Samsung's C-die (1Y nm class) process and implements the JEDEC DDR4 SDRAM standard. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, sitting within the broader hierarchy of volatile memory -> DRAM -> synchronous DRAM -> DDR SDRAM -> power-management-intensive main-memory ICs. Compared with DDR3, DDR4 lowers the operating voltage from 1.5 V to 1.2 V, doubles bank groups for higher bandwidth, and adds features such as bank group architecture, DLL-on/off modes, and per-DRAM addressability. Key features of the K4A8G165WC-BCPB include the wide x16 data interface, which simplifies controller routing for embedded designs; auto precharge and asynchronous reset functions; CRC and parity support on critical signals; ZQ calibration for output driver impedance; dynamic on-chip termination (ODT); and a data mask (DM) function for partial writes. The 1.2 V rail reduces system power roughly 25% versus equivalent DDR3 solutions. Technically, the device uses internal bank groups that allow interleaved accesses for higher effective bandwidth, a programmable DLL for output timing alignment, and programmable CAS latency appropriate to the 2133 Mbps/pin class. The 96-ball FBGA lead-free package measures approximately 7.5 mm x 10 mm x 0.8 mm and suits high-density soldered-down memory subsystems. Typical applications include embedded industrial controllers, networking equipment line cards, set-top boxes, and FPGA-based processing systems that require soldered 8 Gb DDR4 with a 16-bit data bus, such as Xilinx Zynq UltraScale+ or AMD/Intel embedded platforms. Design consideration: DDR4 fly-by routing requires proper on-die termination tuning, length-matched address/command groups, and VTT termination supply design; verify the controller supports the x16 organization, since x8 modules use a different 78-ball footprint. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Prices as of 2026-09-04.

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K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC

K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

The Samsung K4A8G165WC-BCRC is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a data rate of 2400 Mbps (PC4-19200) with a 1.2V supply voltage. It is housed in a 96-ball FBGA package, designed for high-bandwidth memory applications in computing, networking, and industrial systems. The device supports a temperature range of 0°C to +95°C (case temperature) and includes features such as auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic on-chip termination (ODT), and data mask. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption by about 25%. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, providing high-speed temporary data storage for active programs and data. It is essential for servers, desktops, laptops, and embedded systems requiring high bandwidth and capacity. Key features of the K4A8G165WC-BCRC include a 2400 Mbps data rate, 8Gb density, and a 16-bit I/O interface. The device supports a supply voltage range of 1.14V to 1.26V, ensuring compatibility with standard DDR4 power rails. It also features programmable CAS latency, burst length of 8 (BL8), and on-die termination for improved signal integrity. The 96-ball FBGA package (9mm x 13mm) is optimized for space-constrained designs. Technically, the K4A8G165WC is based on Samsung's C-die process technology, offering improved performance and power efficiency. It includes a temperature-compensated self-refresh (TCSR) feature to reduce power consumption at high temperatures. The device supports a 1.2V VDD and VDDQ, with a separate VPP of 2.5V for wordline boost. The memory array is organized into 16 banks (4 bank groups), enabling higher concurrency and reduced latency. Typical applications include high-performance computing, servers, networking equipment, industrial controllers, and embedded systems requiring reliable, high-speed memory. The 512M x 16 organization is ideal for systems needing 16-bit wide memory buses, such as SoCs and FPGAs with DDR4 controllers. When designing with this device, ensure proper decoupling of the VDD and VDDQ rails with 0.1uF and 1uF capacitors, and follow the PCB layout guidelines for DDR4 routing to maintain signal integrity at 2400 Mbps. The device requires a stable 1.2V supply and a 2.5V VPP supply for wordline boost.

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K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE

K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA

The Samsung K4A8G165WC-BCWE is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a data rate of 3200 Mbps (DDR4-3200) with a supply voltage of 1.2V. It is housed in a 96-ball FBGA package, designed for space-constrained applications requiring high memory density and bandwidth. This device supports a temperature range of 0°C to +95°C, making it suitable for a wide range of commercial and industrial applications. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than previous generations, reducing power consumption while delivering higher bandwidth. DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, offering improved reliability and performance over its predecessors. Key features of the K4A8G165WC-BCWE include auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check) for data integrity, ZQ calibration for improved signal integrity, dynamic on-chip termination (ODT) for better signal quality, and data mask function. These features enhance system reliability and performance, especially in high-speed data transmission environments. The device complies with JEDEC standards for DDR4 memory, ensuring interoperability with a wide range of controllers and systems. Technically, the K4A8G165WC-BCWE utilizes Samsung's advanced C-die process technology, which contributes to its high speed and low power consumption. The 96-ball FBGA package provides excellent thermal and electrical performance, with a compact footprint suitable for modern PCB designs. The device supports a burst length of 8 and burst chop of 4, and includes programmable CAS latency and additive latency for flexible timing configurations. Typical applications include high-performance computing, networking equipment, data centers, and embedded systems requiring large memory capacity and high bandwidth. The 512M x 16 organization is ideal for systems with a 16-bit data bus, such as advanced microprocessors and FPGAs. The low operating voltage and high speed make it suitable for power-sensitive applications like laptops and portable devices. When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise. Also, follow the JEDEC DDR4 layout guidelines for signal integrity, especially for high-speed signals. The device requires a stable 1.2V supply and a separate VPP of 2.5V for word line boost, which must be properly regulated.

USD $38.00 联系我们
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE

K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung

The Samsung K4A8G165WG-BCWE is a high-performance 8Gb DDR4 SDRAM organized as 512M x 16, operating at a data rate of 3200 Mbps (PC4-25600). It is supplied in a 96-ball FBGA package and operates from a 1.2V power supply, delivering the bandwidth and power efficiency required for modern computing and embedded systems. This memory IC is designed for applications demanding high density and fast data transfer, such as servers, networking equipment, and high-end consumer electronics. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, succeeding DDR3. It achieves higher speed and lower power consumption through a 1.2V operating voltage, a 16n prefetch architecture, and improved signal integrity with on-die termination (ODT) and data bus inversion (DBI). DDR4 is a volatile memory technology, meaning data is lost when power is removed, and it is widely used as main memory in computers, servers, and embedded systems where high bandwidth and capacity are critical. Key features of the K4A8G165WG-BCWE include a 3200 Mbps data rate, 8Gb density, and a 512M x 16 organization. The device supports a temperature range of 0°C to +85°C and has a typical operating current of 20mA (per LCSC data). It uses a 1.2V supply, reducing power consumption by approximately 25% compared to DDR3L. The 96-ball FBGA package enables compact PCB layouts and is compatible with standard DDR4 DIMM and embedded designs. Technically, the K4A8G165WG-BCWE is part of Samsung's B-die family, known for good overclocking headroom and stable performance. It supports standard DDR4 features such as burst length 8 (BL8), on-die termination, and programmable CAS latency. The device is designed for high-speed signaling with a 19ns typical row cycle time (tRC) and supports 3200 Mbps operation with a 1.2V VDD. The memory interface is parallel, with 16 data lines (DQ) and address/command pins, making it suitable for direct connection to memory controllers in SoCs and CPUs. Typical applications include high-performance computing, servers, networking switches, and industrial embedded systems. The 8Gb density and x16 organization make it ideal for systems requiring moderate capacity with a wide data bus, such as network processors and FPGA-based designs. Its 3200 Mbps speed supports bandwidth-intensive workloads like data analytics and real-time processing. When designing with this device, ensure proper decoupling with 0.1uF and 1uF capacitors near the VDD and VDDQ pins, and follow the layout guidelines in the datasheet for signal integrity at 3200 Mbps. The device requires a stable 1.2V supply and a reference voltage (VREF) for the command/address bus. Thermal management is important; the operating temperature range is 0°C to +85°C, so adequate airflow or heatsinking may be needed in high-density systems.

USD $29.53 联系我们
K4AAG085WM-BCTD - 16Gb DDR4-2666 SDRAM, 1.2V | Samsung
K4AAG085WM-BCTD

K4AAG085WM-BCTD - 16Gb DDR4-2666 SDRAM, 1.2V | Samsung

The Samsung K4AAG085WM-BCTD is a 16Gb (2G x 8) DDR4 SDRAM memory IC operating at DDR4-2666 data rates from a 1.2V supply, housed in a 78-ball FBGA package. It belongs to Samsung's DDR4 SDRAM family of volatile, synchronous dynamic random-access memory components used as main system memory. DDR4 SDRAM is a type of synchronous DRAM that transfers data on both clock edges (double data rate) and uses a command/address bus with bank-group architecture to achieve high bandwidth. In the memory hierarchy, DDR4 SDRAM sits between embedded SRAM caches and non-volatile storage such as NAND flash, serving as the primary working memory for CPUs, SoCs, and FPGA-based systems. Key features of the K4AAG085WM-BCTD include a x8 organization (2G addresses x 8 bits), DDR4-2666 speed grade (BCTD bin), low 1.2V core supply for reduced power versus DDR3, and the space-saving FBGA-78 ball grid array package. Samsung part numbering encodes the configuration: K4AAG = 16Gb DDR4, 08 = x8 organization, WM = die/package revision, BCTD = 2666 Mbps speed bin with 0C to +85C operating range. Architecturally, DDR4 introduces bank groups (up to 4), a lower operating voltage, and a DBI (data bus inversion) capable interface that reduces I/O power. The x8 organization makes the device well suited for ECC-based systems where x8 devices enable single-device data correction (SDDC) on server memory controllers. Typical applications include industrial controllers, embedded computing modules, data storage appliances, firmware boot buffers, and logging memory in networking and server platforms where 16Gb density and 2666 Mbps bandwidth are required. Design considerations: DDR4 requires careful signal-integrity work including length-matched fly-by routing of the command/address bus, per-byte termination (ODT) tuning, and VTT termination supply design. Verify controller compatibility for the BCTD timing bin before substitution. This page synthesizes distributor sourcing data, same-family drop-in alternatives, and practical DDR4 design notes not found in a single manufacturer datasheet.

USD $9.95 有现货
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB

K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung

The Samsung K4AAG165WA-BCPB is a 16 Gbit DDR4 SDRAM DRAM component organized as 1G x 16, operating at data rates up to 3200 Mbps from a 1.2 V supply in a 96-ball FBGA package. It belongs to Samsung's DDR4 family supporting capacities up to 32GB component densities and 25% lower power consumption versus DDR3. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of DDR DRAM, sitting within the memory hierarchy as a volatile DRAM technology under the broader semiconductor memory category. It transfers data on both clock edges, doubling effective bandwidth compared to SDR memory, and uses a low-voltage 1.2 V interface with programmable termination to reduce power. Key features of the K4AAG165WA family include a 16 Gb density organized 1G x 16, data rates up to 3200 Mbps per the Samsung DDR4 product guide, 1.2 V core operation, and an internal bank group architecture that improves effective bandwidth. The x16 organization suits systems needing 16-bit-wide memory interfaces without byte-lane steering complexity. Architecturally, the device uses DDR4 bank groups, on-die termination (ODT), and a command/address training mechanism. Samsung's DDR4 devices consume roughly 25% lower power than equivalent DDR3 parts thanks to the reduced 1.2 V supply and refined process node, improving battery life and thermal margins in mobile and embedded systems. Typical applications include laptop and notebook memory modules, embedded systems, industrial computing, networking equipment, and select Samsung-equipped consumer platforms requiring high-density DDR4 in discrete component form. When designing with this device, follow the Samsung DDR4 product guide for PCB routing rules, fly-by termination, and power sequencing of the 1.2 V VDD and VDDQ rails, and verify the operating temperature grade indicated by the suffix letter on your specific speed/temp ordering code. This page synthesizes distributor pricing, same-family drop-in variants, and practical design notes not found in the manufacturer datasheet, with all pricing cited as of 2026-09-04.

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K4AAG165WA-BCWE - 16Gb DDR4 3200Mbps SDRAM | Samsung
K4AAG165WA-BCWE

K4AAG165WA-BCWE - 16Gb DDR4 3200Mbps SDRAM | Samsung

The Samsung K4AAG165WA-BCWE is a 16Gb DDR4 SDRAM DRAM component organized as 1G x 16, operating at 1.2V with a data rate of 3200 Mbps (DDR4-3200), housed in a 96-ball FBGA package measuring 13 x 9 mm with 0.8 mm ball pitch. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family, a type of volatile semiconductor memory that stores each bit in a capacitor-based cell and transfers data on both clock edges. Within the memory hierarchy, DDR4 sits in the main-memory tier between cache memories (SRAM) and storage (NAND flash), and it succeeds DDR3 by lowering operating voltage from 1.5V to 1.2V and raising per-pin bandwidth. Samsung is the worlds largest DRAM manufacturer, and its DDR4 family spans densities from 4Gb to 32Gb in x4, x8, and x16 organizations. Key features of the K4AAG165WA-BCWE include the 16Gb density in a x16 organization - which halves the bus width requirement compared to x8 parts and suits systems needing 16-bit or 32-bit memory buses - the 3200 Mbps speed bin for maximum DDR4 bandwidth, and 1.2V operation delivering roughly 25% lower power than DDR3 at equivalent performance. According to Samsung, DDR4 also brings improved bank-group architecture (bank groups with per-group activation) that raises effective bandwidth over DDR3. The device uses standard DDR4 core architecture with 8n prefetch, on-die termination (ODT), DLL for output timing, and a command/address training interface. Bank groups allow staggered column access to boost data throughput without increasing core frequency. The BCWE speed bin with a 1600 MHz clock supports the DDR4-3200 JEDEC data rate. Typical applications include laptop and desktop PC main memory (as discrete DRAM components on SO-DIMM or soldered-down designs), embedded computing boards, industrial gateways, networking equipment, and set-top-box platforms requiring 2 GB per chip with a 16-bit interface. Design consideration: DDR4-3200 requires length-matched, impedance-controlled routing (single-ended 40 ohm traces, fly-by command/address topology) and VTT/DDQ termination - budget stackup and decoupling early. The x16 organization increases data-pin count, so plan power integrity for simultaneous switching output noise. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

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K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCH90

K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BCH90 is a 4Gb DDR3L SDRAM memory device organized as 32M x 16 bits across 8 internal banks, designed for high-speed data transfer up to 2133Mb/s per pin. It operates from a 1.35V supply (1.283V to 1.45V range) and is housed in a 96-ball FBGA package, making it suitable for space-constrained applications. DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems. Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C. The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks. Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks. When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.

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K4B4G1646D-BCK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BCK0

K4B4G1646D-BCK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646D-BCK0 is a 4Gb DDR3L SDRAM device organized as 256M x 16 bits across 8 internal banks. It operates at DDR3-1600 (800 MHz) with a data rate of 1600 Mbps per pin, supporting high-speed data transfer up to 2133 Mb/s per pin. The device is housed in a 96-ball FBGA package (13 x 9 mm, 0.8 mm pitch) and is designed for commercial temperature range (0°C to 95°C). It is lead-free and halogen-free, RoHS compliant. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. DDR3L is backward compatible with DDR3, allowing flexible system design. Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and features auto-refresh and self-refresh modes for power saving. The 96-ball FBGA package provides excellent thermal and electrical performance, making it suitable for space-constrained designs. The K4B4G1646D-BCK0 utilizes Samsung's advanced D-die process technology, offering improved performance and lower power consumption compared to previous generations. The device includes a temperature-compensated self-refresh (TCSR) feature that adjusts refresh rate based on temperature, enhancing reliability in varying thermal conditions. Typical applications include DDR3L memory modules for laptops, servers, networking equipment, and embedded systems. It is also used in industrial and automotive applications where low power and high reliability are critical. The device's 1.35V operation makes it ideal for battery-powered devices. When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The VDD and VDDQ supplies should be filtered with 0.1uF and 10uF capacitors. Also, follow the PCB layout guidelines in the datasheet to maintain signal integrity at high speeds.

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K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00

K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BCK00 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at DDR3-1600 (800 MHz) speed grade. It comes in a 96-ball FBGA package (13 x 9 mm, 0.8 mm pitch) and is lead-free and halogen-free, RoHS compliant. This memory device is designed for high-performance computing, networking, and industrial applications requiring low power consumption and high bandwidth. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high data rates. DDR3L is backward compatible with DDR3 and is widely used in mobile, embedded, and server systems where power efficiency is critical. Key features include a 4Gb density, x16 organization, and a data rate of 1600 Mbps/pin. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). It operates over a commercial temperature range of 0°C to 95°C (Tcase). The 96-ball FBGA package with 0.8mm pitch enables compact PCB layouts, and the lead-free and halogen-free construction meets environmental standards. Technically, the K4B4G1646D uses Samsung's D-die process technology, which offers improved performance and power efficiency. It features eight internal banks, auto refresh and self refresh modes, and a programmable refresh rate. The device supports DLL (Delay-Locked Loop) for precise timing and includes a temperature sensor for thermal management. The low voltage operation (1.35V) reduces power dissipation, making it suitable for thermally constrained designs. Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment (routers, switches), and industrial PCs. Its high density and x16 organization make it ideal for applications requiring large memory capacity with a narrow bus width, such as SoC-based designs. The low power consumption is particularly beneficial for battery-powered devices and energy-efficient servers. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet for signal integrity. The 96-ball FBGA requires careful routing of the high-speed data lines to maintain signal quality. Also, verify the memory controller supports DDR3L voltage levels (1.35V) to avoid damage.

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K4B4G1646D-BCMA0 - 4Gb DDR3 SDRAM 256Mx16 | Samsung
K4B4G1646D-BCMA0

K4B4G1646D-BCMA0 - 4Gb DDR3 SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646D-BCMA0 is a 4Gb DDR3 SDRAM organized as 256M x 16, operating at 1.5V with a data rate of 1866 Mbps. It comes in a 96-ball FBGA package, designed for high-density memory applications in computing, networking, and consumer electronics. This device is part of Samsung's D-die DDR3 family, offering reliable performance and compatibility with DDR3-1866 memory controllers. DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate compared to DDR2. It features a prefetch buffer of 8n, enabling high bandwidth while operating at lower voltages (1.5V) than previous generations. DDR3 is widely used in PCs, servers, and embedded systems where high speed and capacity are required. Key features include a 256M x 16 organization, 1866 Mbps data rate, and 1.5V supply voltage. The device supports auto precharge, asynchronous reset, ZQ calibration, data mask, and dynamic on-chip termination (DTC), enhancing signal integrity and system reliability. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs. Technically, the K4B4G1646D-BCMA0 utilizes Samsung's advanced DRAM process technology, ensuring low power consumption and high-speed operation. The D-die revision offers improved timing margins and reduced latency compared to earlier dies. The device operates over a temperature range of 0°C to 85°C, making it suitable for commercial and industrial applications. Typical applications include main memory in laptops and desktops, networking equipment such as routers and switches, and embedded systems like set-top boxes and industrial controllers. Its high density and speed make it ideal for applications requiring large memory footprints and fast data access. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device is RoHS compliant and halogen-free, meeting environmental standards.

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K4B4G1646D-BCNB0 - 4Gb DDR3L SDRAM 2133Mbps | Samsung
K4B4G1646D-BCNB0

K4B4G1646D-BCNB0 - 4Gb DDR3L SDRAM 2133Mbps | Samsung

The Samsung K4B4G1646D-BCNB0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at a data rate of 2133 Mbps per pin. It is housed in a 96-ball FBGA package and is lead-free and halogen-free, compliant with RoHS. This memory device is designed for high-speed double-data-rate transfer, supporting DDR3L-2133 with a supply voltage of 1.35V, making it suitable for low-power applications. DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical. Key features include a 4Gb density, 256M x 16 organization, 2133 Mbps data rate, and 1.35V supply voltage. The device supports programmable CAS latency, on-die termination (ODT), and internal self-calibration, ensuring signal integrity and reliable operation. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs. Technically, the K4B4G1646D-BCNB0 utilizes Samsung's advanced DRAM process technology, providing high-speed performance with low power consumption. It includes features such as posted CAS, programmable CWL, and asynchronous reset, which enhance system flexibility and reliability. The device operates over a temperature range of 0°C to 85°C, making it suitable for commercial applications. Typical applications include laptops, servers, networking equipment, and embedded systems requiring high-density, low-power memory. Its 1.35V operation makes it ideal for battery-powered devices where power efficiency is paramount. When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and proper termination for the address/control lines.

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K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung
K4B4G1646D-BFMA

K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BFMA is a 4Gb (256M x 16) DDR3 SDRAM device in a 96-ball FBGA package, designed for high-performance computing, mobile, and consumer applications. It operates at a data rate of 1866 Mbps (DDR3-1866) with a supply voltage of 1.5V, and is lead-free and halogen-free (RoHS compliant). DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock, doubling the data rate of its predecessor DDR2. It is widely used in PCs, servers, and embedded systems due to its high bandwidth and low power consumption. The K4B4G1646D-BFMA is part of Samsung's D-die family, offering improved performance and reliability. Key features include a 16-bit I/O width, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). It features on-die termination (ODT), programmable CAS latency, and a temperature-compensated self-refresh (TCSR) mode. The device is packaged in a 96-ball FBGA (Fine-Pitch Ball Grid Array) with a 0.8mm ball pitch, enabling compact PCB designs. The K4B4G1646D-BFMA uses a 4Gb D-die architecture with a 1.5V core and I/O supply, achieving a typical operating current of [DATA_NEEDED: IDD] and standby current of [DATA_NEEDED: IDD2]. It supports a wide operating temperature range of 0°C to 95°C (case temperature), making it suitable for industrial and consumer environments. Typical applications include DDR3 memory modules for desktop and laptop computers, networking equipment, set-top boxes, and automotive infotainment systems. Its high density and speed make it ideal for systems requiring large memory capacity with moderate power consumption. When designing with this device, ensure proper signal integrity by following the layout guidelines in the datasheet, including controlled impedance traces and adequate decoupling capacitors near the VDD and VDDQ pins. The device requires a 1.5V supply and a separate VREFCA and VREFDQ reference voltage, which should be generated with low-noise sources.

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K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BHMA

K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung

The Samsung K4B4G1646D-BHMA is a 4Gb DDR3L SDRAM device organized as 256M x 16, operating at 1.35V with a data rate of 1866 Mbps. It is housed in a 96-ball FBGA package, designed for high-density memory applications in embedded systems, computing platforms, and networking equipment. This D-die DDR3L SDRAM is lead-free and halogen-free, RoHS compliant, and supports industrial temperature ranges. DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate signaling to transfer data on both edges of the clock, achieving high data rates. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical. Key features include a 4Gb density, 256M x 16 organization, 1866 Mbps data rate, and 1.35V operation. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto refresh and self refresh modes, and is compatible with JEDEC DDR3L standards. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs. Technically, the K4B4G1646D-BHMA uses a D-die process, which offers improved performance and power characteristics compared to earlier dies. It supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for signal integrity. The device operates over a temperature range of -40°C to +95°C (TC), making it suitable for industrial applications. Typical applications include personal computing devices, mobile phones, tablets, digital cameras, printers, networking equipment, industrial machinery, medical devices, automotive electronics, and solid-state drives. Its low voltage and high density make it ideal for power-sensitive portable devices and high-performance computing platforms. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 1866 Mbps. Also, verify the timing parameters for your specific application, as DDR3L timing is critical for reliable operation.

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K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BMH9

K4B4G1646D-BMH9 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BMH9 is a 4Gb DDR3L SDRAM device organized as 256M x 16 bits across 8 internal banks, designed for high-speed data transfer up to 2133Mb/s per pin. It operates at a low voltage of 1.35V, reducing power consumption by up to 20% compared to standard DDR3 (1.5V), making it ideal for power-sensitive applications. The device is housed in a 96-ball FBGA package (9x13mm) with lead-free and halogen-free construction, compliant with RoHS standards. DDR3L SDRAM is a type of dynamic random-access memory that uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. It is part of the DDR3 family, which is a successor to DDR2 and offers higher bandwidth and lower power consumption. DDR3L specifically operates at 1.35V, distinguishing it from standard DDR3 (1.5V) and enabling its use in mobile and embedded systems where power efficiency is critical. Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration for signal integrity. The device supports burst lengths of 8 and 4, and includes auto-refresh and self-refresh modes for power management. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, suitable for high-density PCB designs. Technically, the K4B4G1646D-BMH9 utilizes Samsung's advanced D-die process technology, which enhances speed and reduces power consumption. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing, and includes features like write leveling and read leveling for improved signal integrity in high-speed systems. The memory is organized with 8 banks, allowing for efficient interleaving and reduced latency. Typical applications include embedded systems, networking equipment, industrial computing, and consumer electronics such as set-top boxes and routers. Its low voltage and high density make it suitable for DDR3L SODIMM modules and on-board memory in space-constrained designs. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2133Mb/s. The device requires a 1.35V supply and a separate VDDQ supply, which should be regulated accurately.

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K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0

K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung

The Samsung K4B4G1646D-BMK0 is a 4Gb DDR3L SDRAM organized as 256M x 16, operating at a speed of 1600 Mbps (PC3L-12800). It is a D-die DDR3L device designed for low-voltage operation at 1.35V, making it ideal for power-sensitive applications. The component is housed in a 96-ball FBGA package, specifically the 96FBGA (TFBGA) form factor, and is lead-free and halogen-free, compliant with RoHS standards. DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by approximately 15-20% while maintaining similar performance. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BMK0 is a key component in the memory hierarchy, providing high-speed data storage and retrieval for processors and controllers. Key features include a density of 4Gb, an organization of 256M x 16, and a data rate of 1600 Mbps. The device supports a temperature range of -40°C to 95°C, making it suitable for industrial applications. The 96FBGA package offers a compact footprint with excellent thermal and electrical performance. The device is also lead-free and halogen-free, ensuring environmental compliance. Technically, the K4B4G1646D-BMK0 utilizes Samsung's advanced D-die process technology, which enhances performance and reliability. The device features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. It supports auto self-refresh and partial array self-refresh for power saving. The 1.35V operation reduces power dissipation, making it ideal for battery-powered and thermally constrained systems. Typical applications include industrial computing, networking equipment, automotive infotainment, and medical devices. The wide temperature range and low power consumption make it suitable for harsh environments. In networking, it provides high-bandwidth memory for routers and switches; in automotive, it supports advanced driver-assistance systems (ADAS) and infotainment; in medical, it enables reliable data processing in diagnostic equipment. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.35V supply and a separate VDDQ, and the reference voltage (VREF) should be carefully routed. For high-speed operation, impedance matching and trace length matching are critical.

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K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90

K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

The Samsung K4B4G1646D-BPH90 is a 4Gb DDR3L SDRAM device organized as 32M x 16 bits across 8 internal banks, designed for high-speed data transfer up to 2133Mb/s per pin. It operates at 1.35V (DDR3L) and is housed in a 96-ball FBGA package, offering a compact footprint for space-constrained designs. This memory component supports advanced DDR3 features such as programmable CAS latency, write latency, on-die termination, and internal calibration for signal integrity. DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which is widely used in computing, networking, and embedded systems. The K4B4G1646D-BPH90 is specifically a 4Gb density device with a 16-bit data bus, making it suitable for applications requiring moderate memory capacity with high-speed data access. Key features include a data rate of 2133Mb/s per pin, 8 internal banks, and support for burst lengths of 8 and 4 (with burst chop). The device includes on-die termination (ODT) for improved signal integrity, ZQ calibration for output driver calibration, and a programmable CAS latency of up to 14. It also features auto precharge, asynchronous reset, and data mask functions. The 96FBGA package measures 13mm x 11.5mm with a 0.8mm ball pitch, enabling high-density PCB layouts. Technically, the K4B4G1646D-BPH90 uses Samsung's D-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. The device supports a wide operating temperature range of 0°C to +85°C, making it suitable for commercial and industrial applications. It is lead-free and halogen-free, complying with RoHS regulations. Typical applications include networking equipment (routers, switches), embedded computing systems, industrial automation, and consumer electronics such as set-top boxes and smart TVs. Its high-speed interface and low power consumption make it ideal for systems requiring reliable memory performance. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high data rates. The device requires a 1.35V supply and a separate VDDQ supply, which should be carefully regulated.

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