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UCC21521Q-Q1 - 4A/6A 5.7kVRMS Dual Gate Driver | Texas Instruments
The Texas Instruments UCC21521Q-Q1 is an AEC-Q100 qualified, 5.7-kVRMS isolated dual-channel gate driver delivering 4-A source and 6-A sink peak output current, housed in a 16-pin SOIC (DW) package. The device is universal in topology, supporting dual low-side, dual high-side, or half-bridge driver configurations, and includes an enable pin for system-level control. An isolated gate driver is a power management IC that provides galvanic isolation between the low-voltage controller side and the high-voltage power stage, allowing a microcontroller to safely drive power semiconductor switches such as MOSFETs, SiC FETs, and IGBTs. Gate drivers form the interface layer of the power-conversion hierarchy: controller -> signal isolator -> gate driver -> power switch. Key features include capacitive-coupled isolation rated at 5700 Vrms, high CMTI (common-mode transient immunity) for fast-switching wide-bandgap applications, a UVLO (undervoltage lockout) on both input and output supplies that prevents erratic gate drive during power-up, and an enable pin that places both outputs low for safety interlocks. The 4-A/6-A asymmetrical drive strength provides strong turn-off capability that minimizes switching losses and improves dv/dt immunity against parasitic turn-on. The Q1 grade guarantees operation from -40C to +125C ambient under AEC-Q100 automotive qualification, making the device suited to traction inverters, on-board chargers, and 48V systems. The universal channel configuration lets a single bill-of-material position cover half-bridge, dual low-side, and dual high-side designs, reducing qualification overhead across platforms. Typical applications include automotive traction inverters, OBC PFC and LLC power stages, DC fast-charger modules, solar string inverters, and industrial motor drives driving SiC or IGBT switches. The wide-body creepage and clearance of the SOIC-16 (DW) package supports reinforced isolation designs. Design consideration: size the gate-loop resistance to balance switching speed against ringing, and place the driver close to the power switch to minimize loop inductance; always verify CMTI margin against the fastest dv/dt in the system. Pricing data as of 2026-08-29; see tiers below for quantity pricing.
UCC21530 - 4A/6A 5.7kVRMS Isolated Dual Gate Driver | TI
The Texas Instruments UCC21530 is an isolated dual-channel gate driver delivering 4A source and 6A sink peak output current in a 14-pin SOIC (DWK) package. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs at switching frequencies up to 5MHz, with a 5.7kVRMS reinforced isolation barrier and a minimum common-mode transient immunity (CMTI) of 125V/ns. An isolated gate driver is a specialized power-management IC that provides galvanic isolation between a low-voltage controller (MCU or PWM controller) and a high-voltage power stage while supplying the peak current required to switch power transistors rapidly. It sits in the power electronics signal chain between the digital controller and the gate of an IGBT or MOSFET. The UCC21530 uses a capacitive isolation architecture, which enables high-speed signal transfer with low power consumption compared with optocoupler-based drivers. Key features include 4A/6A peak output current, 5.7kVRMS reinforced isolation, 125V/ns minimum CMTI, 3.3mm channel-to-channel spacing, an enable pin, and programmable dead time via the DT pin. According to the TI datasheet, the device offers best-in-class propagation delay and low pulse-width distortion, which reduces dead-time losses and enables precise, efficient switching. Undervoltage lockout (UVLO) on both the input and output sides adds system-level robustness. Architecturally, the UCC21530 comprises an input-side controller coupled through a capacitive isolation barrier to two secondary-side drivers. The reinforced barrier supports demanding safety standards, while internal functional isolation between the two outputs allows independent high-side and low-side operation in half-bridge and full-bridge configurations without external isolation components. Typical applications include three-phase motor drives, solar string inverters, EV onboard chargers, UPS systems, and server power supplies. High peak current and low propagation delay minimize switching losses, while high CMTI prevents false gate triggering at rapidly slewing switch nodes in SiC designs. When designing with the UCC21530, minimize gate-loop parasitic inductance, set dead time correctly via the DT pin to prevent shoot-through, and verify UVLO thresholds against your rail-sequencing plan for reliable startup. Pricing as of 2026-08-30 is available from authorized distributors listed in data sources.
UCC21530DWKR - 4A/6A Dual-Channel Isolated Gate Driver | TI
The Texas Instruments UCC21530DWKR is a 4A source / 6A sink, 5.7 kVRMS reinforced-isolated dual-channel gate driver in a 14-pin SOIC (DWK) package with 3.3 mm channel-to-channel spacing. It is engineered to drive IGBTs, silicon MOSFETs, and SiC MOSFETs up to 5 MHz switching frequency, with a minimum 125 V/ns common-mode transient immunity (CMTI) rating. A galvanically isolated gate driver is a power-semiconductor interface IC that translates low-voltage PWM control signals from a digital controller (MCU, DSP, or FPGA) into the high-voltage, high-current drive required to switch the gate of a power transistor. It belongs to the broader hierarchy of gate driver -> power management IC -> signal conditioning -> power conversion. Reinforced isolation, defined by IEC 60747-17, provides a 5.7 kVRMS working voltage plus transient overvoltage protection between the low-voltage primary side and the high-voltage secondary side, eliminating the need for optocouplers or external bootstrap circuits in many topologies. Key features include 4 A peak source / 6 A peak sink drive capability, 5.7 kVRMS reinforced isolation per UL 1577, 8 V to 18 V VDD supply range (VDDA/VDDB up to 25 V), programmable dead-time control via the DT pin, an enable pin for simultaneous shutdown of both outputs, internal functional isolation between the two secondary sides, and an extended -40C to +125C operating temperature range. The wide drive-voltage capability supports SiC MOSFET turn-on enhancement and IGBT gate-charge requirements across many power classes. The device employs TI's capacitive isolation technology using an internal SiO2 dielectric barrier, achieving CMTI of at least 125 V/ns and supporting switching frequencies up to 5 MHz. Fail-safe logic ensures that primary-side faults force both outputs LOW, preventing catastrophic half-bridge shoot-through conditions in motor drive and inverter applications. Typical applications include solar inverters, industrial motor drives (AC induction, BLDC, PMSM), telecom DC/DC converters using DAB/PSFB topologies, EV charging stations (OBC and DC fast charge), SiC FET-based high-frequency converters, and Class D audio amplifiers. The reinforced isolation barrier also allows direct drive of 600 V / 1200 V / 1700 V class power stages without additional isolation. When designing with the UCC21530DWKR, choose decoupling capacitors of at least 1 uF low-ESR ceramic on each VDD rail placed within 5 mm of the IC pins. The DT pin resistor sets dead time and must be selected based on the specific power-switch turn-off delay to prevent cross-conduction; consult the datasheet's dead-time programming section for the recommended resistor range. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB layout notes not consolidated on the manufacturer datasheet front page, providing engineers with a single decision-ready reference.
UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI
The Texas Instruments UCC21530Q-Q1 is an AEC-Q100 qualified, reinforced isolated dual-channel gate driver delivering 4A source and 6A sink peak output current, designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs at switching frequencies up to 5MHz. It comes in a 14-pin SOIC (DWK) package with a 5.7kVRMS reinforced isolation barrier providing 3.3mm channel-to-channel spacing. An isolated gate driver is a power management IC that transfers logic-level PWM control signals across a galvanic isolation barrier to drive the gate of a high-side or low-side power switch floating at high voltage. Within the power-electronics hierarchy (gate driver -> isolated driver IC -> power management IC -> semiconductor), the UCC21530-Q1 occupies the critical interface between a microcontroller such as the TMS320F28004x C2000 family and the power stage. Key features include best-in-class propagation delay and pulse-width distortion, programmable dead time via a single DT pin resistor, a common-mode transient immunity (CMTI) of at least 125V/ns for operation on fast-switching GaN and SiC bridges, and TTL/CMOS-compatible input thresholds independent of the VDDI supply. An enable pin allows global shutdown, and both outputs can be interlocked for half-bridge configurations. The capacitive isolation architecture supports a maximum repetitive peak isolation voltage suitable for 800V-class automotive systems such as on-board chargers and traction inverters, though designers should verify creepage requirements against the 3mm package spacing. Wide VDDI operation on the output side accommodates 5V-to-20V gate-drive rails needed for SiC MOSFETs. Typical applications include automotive traction inverters, 800V on-board chargers (OBC), DC-DC converters, motor drives, and solar inverters. Pairing the driver with SiC MOSFETs such as the LMG3422 GaFET ecosystem or discrete SiC switches yields low-loss, high-frequency power stages. Design tip: size the DT-pin resistor precisely to set dead time, and place a low-ESR decoupling network (1uF plus 100nF) directly at VDDA and VDDB to sustain 4A/6A peak gate currents without droop.
UCC21530QDWKRQ1 - 4A/6A 5.7kVrms Isolated Gate Driver | TI
The Texas Instruments UCC21530QDWKRQ1 is an automotive-grade, 4-A source / 6-A sink, 5.7-kVRMS reinforced isolated dual-channel gate driver with enable and programmable deadtime, housed in a 14-pin DWK (SOIC-14 wide-body) package. It drives IGBTs, SiC MOSFETs, and GaN power switches up to 5 MHz with best-in-class propagation delay (33 ns typical) and pulse-width distortion. The reinforced isolation barrier is rated to 5.7 kVRMS with a minimum 8.5-mm creepage / clearance and 3.3-mm channel-to-channel spacing, simplifying UL 1577 and IEC 60747-17 compliance for high-voltage systems. An isolated gate driver is a switching power-supply sub-system that translates low-side logic-level PWM into a high-voltage, floating gate-drive signal referenced to the switched-node of a half-bridge. It belongs to the gate-driver IC family, a category within power MOSFET/IGBT drivers, under the broader power management hierarchy. The UCC21530-Q1 integrates a silicon-oxide isolation transformer, two output channels (the chip itself), and is AEC-Q100-qualified for automotive environments by design. Key features include 4-A peak source and 6-A peak sink output current, a wide 18-V to 25-V VDD/VDDA range (3-V to 18-V on logic side), 33-ns typical propagation delay, 5-ns maximum channel-to-channel delay matching, 100-V/ns CMTI, and integrated programmable deadtime (DT) for shoot-through prevention. An active-low enable pin and a fault-ready open-drain output support sequencing and desaturation monitoring in three-phase inverters and PFC stages. Typical applications include traction inverters for EV powertrains, on-board chargers (OBC), industrial servo drives, solar string inverters, telecom DC/DC converters, and any 400-V / 800-V bus half-bridge topology requiring reinforced isolation. The DWK wide-body SOIC package provides 8.5 mm of creepage for high-voltage pollution-degree-2 environments. When designing with the UCC21530-Q1, place 1-uF / 100-nF decoupling on VDD/VDDA/VCCI close to the IC pins. Use a bootstrap diode + capacitor on the high-side channel whose voltage rating is rated for the DC bus plus transient ringing. Always respect the absolute-maximum VDD/VDDA of 30 V to avoid catastrophic gate-oxide damage. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet — including same-package TI options, cross-brand validation notes, and BOM-optimization guidance unavailable on DigiKey/Mouser product pages.
UCC21540 - 4A/6A 5.7kVRMS Isolated Gate Driver | Texas Instruments
The Texas Instruments UCC21540 is a reinforced isolated dual-channel gate driver delivering up to 4-A peak source and 6-A peak sink current to drive power MOSFETs, IGBTs, and GaN transistors. It carries a 5.7-kVRMS galvanic isolation rating, and the DWK package option provides 3.3-mm channel-to-channel spacing for high bus-voltage industrial designs. An isolated gate driver is a specialized IC that provides galvanic isolation between a low-voltage controller and a high-voltage power stage, enabling safe, ground-loop-free switching of power transistors in the power-conversion hierarchy: gate driver -> isolated driver -> power management IC. The UCC21540 belongs to the UCC2154x family within TI's broad isolated gate driver portfolio, optimized for 10-12V driven MOSFETs and IGBTs. Key features include 4-A/6-A peak drive strength, 5.7-kVRMS reinforced isolation per the capacitive isolation technology, a programmable-deadtime (DT) pin that prevents shoot-through in half-bridge configurations, a disable (DIS) pin for system-level fault shutdown, and an 8-V UVLO on the secondary-side supply. VDD on the output side operates from 6.5V to 18V, supporting both dual low-side and half-bridge topologies. Technically, the device uses TI capacitive isolation technology, delivering fast propagation delay, low channel-to-channel matching error, and high common-mode transient immunity (CMTI), which is essential when switching at high frequency across large dv/dt events such as GaN half-bridge transitions. The dual-input configuration accepts both PWM-style inverting/non-inverting inputs for flexible control interfacing. Typical applications include server and telecom power supplies, industrial motor drives, solar string inverters, and EV onboard chargers, where its combination of drive strength, deadtime control, and isolation robustness maximizes converter efficiency and reliability. Design tip: keep the gate-drive loop compact, set the DT pin resistor for the deadtime your switches require, and respect creepage/clearance spacing on the PCB. According to TI, pricing and availability as of 2026-08-30.
UCC21540ADWR - 4A/6A Dual Isolated Gate Driver, 14-SOIC | TI
The Texas Instruments UCC21540ADWR is a 4A/6A dual-channel reinforced isolated gate driver with disable pin and programmable dead time, housed in a 14-pin SOIC (DW) package. The driver delivers 4A peak source and 6A peak sink current, supports up to 5.7kVrms galvanic isolation, and operates across an industry-standard 3V to 18V VCC range, making it suitable for driving power MOSFET, IGBT, and GaN transistors in half-bridge, dual low-side, or dual high-side configurations. An isolated gate driver is a semiconductor device that provides galvanic isolation between a low-voltage control circuit (such as a microcontroller or DSP) and a high-voltage power stage. By using capacitive or magnetic isolation barriers, these drivers protect low-voltage logic from high-voltage transients while delivering the high peak currents required to rapidly switch power FET gates. The UCC21540ADWR belongs to the isolated gate driver category, a sub-family of power management ICs that sits between MCU/DSP controllers and the discrete power switches in converters, motor drives, and solar inverters. Key features include 4A source / 6A sink peak drive current, 5.7kVrms basic isolation (per UL 1577), 1500Vrms working voltage, programmable dead time from 0 to several hundred nanoseconds via a single external resistor, and an active-low DISABLE pin for synchronized shutdown. The device supports up to 25V VDD supply for gate drive rails, and its dual-channel architecture permits independent control of high-side and low-side FETs in a half-bridge topology. The UCC21540ADWR uses TI's capacitive isolation technology with an integrated transformer driver on-chip, providing robust common-mode transient immunity (CMTI) and eliminating the need for optocouplers. The internal architecture includes a PWM input stage, oscillator, isolation barrier, and output buffer stages optimized for fast propagation delay (typically under 40ns) and minimal channel-to-channel skew, both critical for high-frequency switch-mode power supply designs. Typical applications include solar inverters, industrial motor drives, telecom brick converters, server and telecom power supplies, EV charging stations, and UPS systems. The wide VCC range also supports battery-powered portable equipment driving 12V to 48V bus rails. When designing with this part, observe that the disable pin (pin 6) defaults to a defined logic level - leave it tied high if unused. Dead-time programming resistor selection must be verified against the actual switching frequency, and a small bypass capacitor (typically 1nF to 10nF) is recommended near VCC and VDD supplies. This page synthesizes distributor pricing, drop-in alternatives (including same-family UCC21540DWK in the larger SOIC-16 DWK footprint), and practical design notes that complement the manufacturer datasheet.
UCC21540QDWKRQ1 - 5.7kVRMS Isolated Dual Gate Driver | Texas Instruments
The Texas Instruments UCC21540QDWKRQ1 is an automotive-grade, AEC-Q100 qualified, reinforced-isolated dual-channel gate driver delivered in a 14-pin SOIC (DWK) package. It provides 4 A peak-source and 6 A peak-sink output current to drive power MOSFET, IGBT, and GaN transistors, with 5700 VRMS galvanic isolation based on capacitive coupling and programmable dead time for half-bridge configurations. An isolated gate driver is a power-management IC that transfers control signals across a galvanic isolation barrier, allowing a controller on the low-voltage side to safely switch power transistors floating at high potential. Isolated gate drivers sit within the broader hierarchy of gate drivers, power management ICs, and semiconductors, and are essential building blocks in any switched-mode power conversion system where the switch node is referenced to a high-voltage rail. Key features include 5700 VRMS reinforced isolation, 8-V UVLO on the secondary side, configurable dual inputs allowing the device to operate as two low-side drivers, two high-side drivers, or a half-bridge driver with independent or interlocked control, and programmable dead time implemented via a single external resistor. The DWK package offers 3.3-mm minimum channel-to-channel spacing for reinforced isolation and a wide operating temperature range suited to automotive under-hood environments. Architecturally, the device uses TI capacitive isolation technology, which provides faster and more consistent propagation delay than optocoupler-based drivers, along with robust common-mode transient immunity. Consistent performance under extreme temperature conditions makes the -Q1 variant suitable for traction inverters, onboard chargers, and other automotive power systems. Typical applications include EV traction inverter half-bridges driving IGBT or SiC/GaN modules, onboard charger and DC-DC converter power stages, solar string inverters, and industrial motor drives. The 4 A/6 A drive strength is well matched to medium-power switches requiring fast turn-off to minimize switching losses. Design tip: size the dead-time resistor precisely and place a low-ESR decoupling capacitor directly across VDDA/VSSA and VDDB/VSSB; verify that the CMTI rating covers the expected dV/dt of your switch node to prevent spurious output transitions.
UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI
The Texas Instruments UCC21550 is a reinforced isolated dual-channel gate driver delivering 4A peak-source and 6A peak-sink current to drive power MOSFETs, SiC, GaN, and IGBT transistors. Housed in a 16-pin SOIC (DW) package, it provides 5000Vrms reinforced isolation per UL1577 and operates across a wide -40C to +150C temperature range. The device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. An isolated gate driver is an integrated circuit that supplies the gate charge current needed to switch power transistors while maintaining galvanic isolation between the low-voltage controller and the high-voltage power stage. Within the power management hierarchy (gate driver -> isolated gate driver -> power management IC), isolation is critical for safety, noise immunity, and level-shifting in high-voltage systems such as motor drives and solar inverters. Key features include the high 4A/6A peak currents that rapidly charge and discharge large gate capacitances, reducing switching losses in SiC and GaN converters. Programmable dead time, set by a resistor on the DT pin, prevents shoot-through in half-bridge topologies. Capacitive silicon-dioxide isolation technology provides high common-mode transient immunity (CMTI), essential when switching fast SiC devices at high dv/dt. Undervoltage lockout (UVLO) on both input and output supplies protects against brownout conditions, and the family offers multiple UVLO and dead-time grade options (A/B/C variants). Technically, the UCC21550 transfers PWM signals across a capacitive isolation barrier with low propagation delay and tight channel-to-channel matching, according to TI datasheet UCC21550 (46 pages). Typical applications include switch-mode power supplies, solar string inverters, motor drives, EV onboard chargers, and industrial power conversion. The wide temperature range and reinforced isolation suit automotive and industrial environments (an AEC-Q100 qualified UCC21550x-Q1 family is available). Design tip: place the driver close to the power transistors to minimize gate-loop parasitic inductance, and size the DT resistor dead time to the switching characteristics of the connected transistors to prevent shoot-through.
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
The Texas Instruments UCC21550ADWR is a 5000Vrms reinforced-isolated dual-channel gate driver with 4A peak source and 6A peak sink output current, programmable dead time, and CMTI greater than 125 V/ns, housed in a 16-pin SOIC (DW) package. An isolated gate driver is a power management IC that translates low-voltage logic signals across a galvanic isolation barrier to drive the gate of a power transistor such as a MOSFET, SiC MOSFET, GaN FET, or IGBT. Within the power-conversion hierarchy, it sits between the PWM controller or microcontroller and the power stage, providing both the current amplification needed to switch power devices quickly and the isolation needed to shift logic references to high-side or floating switch nodes safely. Key features include configurable operation as two low-side drivers, two high-side drivers, or a half-bridge driver; a wide VDD output supply range up to 25V; a 5V undervoltage lockout (UVLO) option; and an integrated DISABLE pin for immediate output control. The capacitive-coupling isolation architecture delivers high common-mode transient immunity, critical for SiC and GaN converters whose fast switching edges (dV/dt exceeding 100 V/ns) would corrupt optocoupler-based drivers. Technically, the UCC21550 uses TI capacitive isolation technology with on-chip logic that supports programmable dead time via an external resistor, protecting half-bridge power stages from shoot-through. The asymmetric 4A source / 6A sink capability turns off power devices faster than it turns them on, minimizing switching losses and reducing the risk of parasitic turn-on in bridge topologies. The junction temperature range of -40C to +150C supports demanding thermal environments such as automotive traction inverters and industrial drives. Typical applications include solar inverters, motor drives, onboard chargers, server and telecom power supplies, and SiC/GaN half-bridge power stages where high CMTI and fast propagation are essential. The device suits engineers consolidating on one driver family across MOSFET, IGBT, SiC, and GaN platforms. A key design consideration: verify the 5V UVLO threshold matches your gate-drive supply - for SiC MOSFETs requiring 15V-to-18V drive, confirm UVLO behavior remains valid across the full 25V VDD range, and always place a low-ESR ceramic capacitor close to VDD. This page adds value beyond the manufacturer datasheet by combining distributor pricing, verified drop-in alternatives within the same family, engineering design notes, and application-level selection guidance in one place.
UCC21550AQDWKRQ1 - 4A/6A 5kVRMS Isolated Gate Driver | TI
The Texas Instruments UCC21550AQDWKRQ1 is an automotive-grade, reinforced isolated dual-channel gate driver delivering 4 A peak source and 6 A peak sink current, with 5000 Vrms galvanic isolation based on capacitive coupling, housed in a 14-pin SOIC (DWK) package. Per the TI UCC21550-Q1 datasheet, the device integrates a dedicated DIS (disable) pin and a DT (dead time) pin for programmable dead-time control. An isolated gate driver is a power management IC that transfers logic-level PWM control signals across a galvanic isolation barrier to drive the gate of a power semiconductor operating at high voltage. In the power-electronics hierarchy, it sits between the PWM controller or MCU and the power stage (MOSFET, SiC MOSFET, GaN FET, or IGBT), providing both safety isolation and the high peak current needed to switch power devices quickly and efficiently. Key features include the 4 A/6 A asymmetric drive strength that accelerates turn-off to reduce switching losses, 5 kVRMS reinforced isolation suitable for high-voltage industrial and automotive buses, and programmable dead time via a single resistor on the DT pin, which simplifies half-bridge design and protects against shoot-through. The DIS pin allows immediate output disable for fault handling. Architecturally, the input side (INA, INB, DIS) uses TTL- and CMOS-compatible input thresholds isolated from the VDD supply. The UCC21550-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver, giving designers one part number for multiple topologies. Capacitive isolation technology provides high CMTI and long-term barrier reliability for automotive environments. Typical applications include onboard chargers (OBC), traction inverters, and DC-DC converters in electric vehicles, as well as solar inverters, motor drives, and server/telecom power supplies where SiC or IGBT switches demand robust, isolated gate drive. Design-wise, use the DT pin resistor to set dead time per your switch technology; SiC and GaN typically need shorter dead time than IGBTs. Ensure VDD decoupling with low-ESR ceramics close to the driver. This page synthesizes distributor pricing, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
The Texas Instruments UCC21550BDWR is a reinforced isolated dual-channel gate driver delivering 4 A peak source and 6 A peak sink output current, with 5000 Vrms galvanic isolation and common-mode transient immunity (CMTI) greater than 125 V/ns, housed in a 16-pin SOIC (DW) package. An isolated gate driver is a power-management IC that transfers a logic-level PWM signal across a galvanic isolation barrier to drive the gate of a power transistor such as a MOSFET, SiC MOSFET, GaN FET, or IGBT sitting on a high-voltage or floating potential. It sits in the signal chain between the PWM controller or microcontroller and the power stage, forming the critical interface in any isolated power conversion system. Key features include universal configuration as two low-side drivers, two high-side drivers, or one half-bridge driver; programmable dead time for shoot-through protection; a disable function; VDD output supply up to 25 V for direct drive of wide-bandgap devices; and a junction temperature range of -40 C to +150 C for demanding thermal environments. The capacitive coupling isolation technology provides a minimum isolation withstand of 5000 Vrms. Architecturally, the input side is isolated from the two output drivers by a silicon-dioxide capacitive isolation barrier, which rejects the extremely fast dv/dt transients generated by SiC and GaN power stages. The 8 V UVLO threshold ensures outputs are held low until the driver supply is stable, preventing half-bridge shoot-through during startup. Typical applications include solar inverters, motor drives, server and telecom power supplies, on-board chargers, and industrial half-bridge power stages using SiC or IGBT switches. Design-wise, place a low-ESR decoupling capacitor close to VDD/VSS on both sides of the barrier, and use the programmable dead-time pins to match the switching characteristics of the selected power transistor. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
UCC21550BQDWRQ1 - 4A/6A Automotive Isolated Gate Driver | Texas Instruments
The Texas Instruments UCC21550BQDWRQ1 is an automotive-grade (AEC-Q100 qualified, UCC21550-Q1 family) reinforced-isolated dual-channel gate driver delivering 4A peak source and 6A peak sink output current, with 5000Vrms galvanic isolation via on-chip capacitive coupling, packaged in a 16-pin SOIC (DW) surface-mount package. An isolated gate driver is a power-management IC that translates low-voltage PWM logic signals across a galvanic isolation barrier to drive the gate of a power transistor floating at high voltage. Within the power electronics hierarchy, it sits between the PWM controller or MCU (such as a C2000 DSP) and the power switch (MOSFET, SiC MOSFET, GaN FET, or IGBT), and is fundamental to isolated half-bridge, full-bridge, and boost converter stages in industrial and automotive power systems. Key features of the UCC21550BQDWRQ1 include programmable dead time via an external resistor, a disable pin for fast shutdown, 8V undervoltage lockout (UVLO) on the driver supply for robust SiC/IGBT gate protection, and flexible configuration as two low-side drivers, two high-side drivers, or one half-bridge driver. The reinforced isolation barrier supports functional safety and high-voltage designs per automotive requirements. Architecturally, the device uses TI capacitive isolation technology, which provides high common-mode transient immunity and fast, precise signal transfer across the barrier. The wide operating temperature range supports underhood and industrial environments, and the 4A/6A asymmetric drive strength allows fast turn-off to minimize switching losses in SiC and IGBT stages. Typical applications include onboard chargers, DC-DC converters, traction inverters, solar string inverters, and motor drives, where a floating high-side switch and reinforced isolation are mandatory. Design consideration: select the dead-time resistor value per the datasheet formula and verify the driver-side UVLO threshold (8V) matches the selected SiC MOSFET gate-plateau requirements to avoid operating the switch in a high-resistance region. This page synthesizes distributor availability data, TI product pages, drop-in family alternatives, and practical design notes not consolidated in the manufacturer datasheet alone.
UCC21550Q-Q1 - 4A/6A Isolated Dual Gate Driver | TI
The Texas Instruments UCC21550Q-Q1 belongs to the UCC21550-Q1 automotive family of reinforced isolated dual-channel gate drivers with programmable dead time, delivering 4A peak-source and 6A peak-sink output current to drive power MOSFET, SiC, GaN, and IGBT transistors. It is offered in a 16-pin SOIC (DW) package rated at 5000Vrms reinforced isolation and an operating temperature range of -40C to 150C. An isolated gate driver is a power management IC that provides galvanic isolation between a low-voltage controller (such as an MCU) and the high-voltage power stage of a switching converter or motor inverter. Within the power-electronics hierarchy, it sits between the PWM controller and the power transistor, translating logic-level signals across the isolation barrier while providing the high peak currents needed to rapidly charge and discharge transistor gates. Key features include a capacitive isolation architecture with high common-mode transient immunity for fast-switching WBG devices, programmable dead time via a single resistor for half-bridge configurations, and flexible configuration as two low-side, two high-side, or one half-bridge driver. A disable pin and interlock function prevent shoot-through. Per TI product data, the family supports both A and B grade options with different propagation delay specifications. The driver uses TI capacitor-based isolation technology, which avoids the aging characteristics of optocouplers and sustains high dV/dt events typical of SiC and GaN switching. High CMTI and fast propagation delay enable narrow dead times, improving converter efficiency in high-frequency designs. Typical applications include on-board chargers and traction inverters in electric vehicles, solar string inverters, industrial motor drives, server and telecom power supplies, and wireless charging power stages. Design consideration: program the dead-time resistor per the datasheet equation and keep the gate-drive loops short; verify thermal dissipation from gate-charge losses at your switching frequency before finalizing the layout.
UCC21551-Q1 - 4A/6A Dual-Channel Isolated Gate Driver | TI
The Texas Instruments UCC21551-Q1 is an automotive-grade, dual-channel reinforced-isolated gate driver delivering 4 A peak source and 6 A peak sink current, packaged in a 14-pin SOIC (DWK) with >5.3 mm channel-to-channel creepage. It targets high-voltage power MOSFET, SiC, and IGBT gate driving in 5000 Vrms isolated systems. The device supports input-side VCCI from 3 V to 5.5 V and per-channel VDDA/VDDB outputs up to 25 V, with a minimum 125 V/ns common-mode transient immunity (CMTI) across the capacitive isolation barrier. An isolated gate driver is a semiconductor that bridges a low-voltage controller (MCU, DSP, FPGA) and a high-voltage power transistor, providing level shifting, reinforced galvanic isolation (typically UL 1577 / VDE 0884-11 compliant), and the high peak currents needed to charge and discharge the gate capacitance of MOSFETs, SiC FETs, or IGBTs. Within the broader taxonomy, the UCC21551-Q1 belongs to the gate-driver IC family, which sits under power management semiconductors and functions as the critical interface between control logic and switching power stages in isolated converters and motor drives. Key functional features include programmable dead time to prevent shoot-through in half-bridge topologies, an enable pin for sequencing and fault management, dual-input logic with built-in deglitch filters, and undervoltage lockout (UVLO) on both VCCI and VDDA/VDDB rails. The driver is configurable as two low-side, two high-side, or one half-bridge channel, and supports input voltages up to 25 V per output channel relative to its local ground. Internally, the UCC21551-Q1 uses TI's capacitive-based isolation technology to transfer PWM signals across a 5 kVRMS reinforced barrier while rejecting fast common-mode transients. The 4 A source / 6 A sink asymmetrical drive strength is optimized for switching IGBTs and SiC FETs whose gate charge requires stronger pull-down to prevent parasitic turn-on from Miller capacitance. Typical applications include EV traction inverters and onboard chargers, industrial servo drives and solar inverters, telecom DC/DC converters using phase-shifted full-bridge or LLC topologies, and any system where a reinforced-isolation barrier between controller and power stage is mandatory for safety or regulatory compliance. Design tip: when driving SiC FETs at high dV/dt, place a small external gate resistor (typically 2-10 ohm) close to the driver output to dampen parasitic ringing, and ensure the PCB creepage between channels and from each channel to ground meets the application's pollution degree and working voltage requirements. This page synthesizes the TI datasheet, current distributor pricing as of 2026-10-15, AEC-Q100 compliance status, drop-in same-package alternatives, and practical PCB layout guidance not consolidated on any single manufacturer or distributor page.
UCC21710-Q1 - 10A Isolated Gate Driver | Texas Instruments
The Texas Instruments UCC21710-Q1 is a galvanic isolated single-channel gate driver designed for high-power SiC MOSFETs and IGBTs up to 1700 V. It delivers up to ±10 A peak source and sink current in a 16-SOIC package, enabling fast switching of large power modules. The driver integrates reinforced isolation rated at 5700 Vrms, with high common-mode transient immunity (CMTI) for robust operation in noisy environments. A gate driver is a power-management IC that converts low-voltage control signals from a microcontroller into high-current pulses to drive the gate of power transistors. In a system hierarchy, the gate driver sits between the controller and the power switch, providing isolation and signal amplification. The UCC21710-Q1 belongs to the isolated gate driver family, which adds galvanic isolation to protect low-voltage control circuitry from high-voltage transients. Key features include: ±10 A peak source/sink current, 5700 Vrms reinforced isolation, single-channel operation, and input and output side UVLO. It supports overcurrent (OC) and short-circuit detection via shunt sensing, active Miller clamp to prevent spurious turn-on, fault reporting, and isolated analog-to-PWM sensing for temperature or voltage monitoring. These features provide comprehensive protection for SiC and IGBT switching. The UCC21710-Q1 uses capacitive coupling for signal transfer, achieving high CMTI. It is AEC-Q100 qualified for automotive applications, meeting the reliability demands of HEV/EV traction inverters. The device's short-circuit clamping feature limits gate voltage to slightly above VDD, protecting semiconductors from gate-source/emitter overvoltage breakdown. Typical applications include HEV/EV traction inverters, solar inverters, industrial motor drives, UPS, wind turbine converters, and railway traction. The high peak current and 1700-V rating allow it to directly drive large IGBT modules and SiC MOSFETs without external buffers. Its isolation enables safe operation in high-voltage DC-link systems. When designing with this device, ensure proper bias supplies: UCC14240-Q1 is a recommended isolated power supply for the output side. Pay attention to gate loop inductance and maintain adequate PCB spacing for reinforced isolation. The active Miller clamp must be connected to the gate to prevent high dV/dt-induced turn-on.
UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive
The Texas Instruments UCC21710QDWRQ1 is an automotive-grade, galvanically isolated single-channel gate driver designed to switch up to 1700V SiC MOSFETs and IGBTs. The part delivers ±10A peak source/sink drive current, 5.7kVrms reinforced isolation, and high common-mode transient immunity (CMTI) in a 16-pin SOIC (DW) wide-body package. It is AEC-Q100 qualified and rated for -40C to +150C ambient operation, making it suitable for under-hood automotive power electronics. A gate driver is a power amplifier that accepts a low-power control signal from a microcontroller, DSP, or FPGA and produces the high-current drive required to efficiently switch power transistors such as IGBTs and SiC MOSFETs. In the power-conversion signal chain, the gate driver sits between the low-voltage control stage and the high-voltage power stage. Isolated gate drivers add galvanic isolation to protect low-voltage control circuitry from high-voltage transients, ground loops, and dv/dt noise, which is essential in traction inverters, motor drives, onboard chargers, and industrial converters. They sit hierarchically under gate driver -> driver IC -> power management IC -> semiconductor. Key features include fast DESAT overcurrent and short-circuit protection with shunt current sensing, fault reporting via FLT/EN, an active Miller clamp to prevent parasitic re-turn-on during high dv/dt events, and input/output side power supply UVLO. An integrated isolated analog-to-PWM sensor enables temperature or high-side voltage sensing across the isolation barrier without a discrete digital isolator. The device supports up to 1.5kVrms working voltage, a 12.8V to 18V output supply range, a typical propagation delay of 60ns, and CMTI of 100V/ns. The UCC21710QDWRQ1 uses TI's SiO2 capacitive isolation technology, which provides reliable reinforced isolation and high-speed signal transfer. Its advanced protection features optimize SiC and IGBT switching behavior, reducing switching losses and enhancing system robustness. The fast DESAT fault response (typically sub-microsecond) protects the power stage from catastrophic short-circuit events, while the soft turn-off (STO) sequence limits inrush and dv/dt during fault clearing. Typical applications include EV traction inverters, onboard chargers (OBC), high-voltage DC-DC converters, motor drives, and industrial power supplies. The automotive-grade qualification and wide temperature range make it particularly well-suited for xEV powertrain systems where SiC MOSFETs are increasingly adopted for higher switching frequencies and efficiency. When designing with this part, ensure proper PCB layout with short, low-inductance gate drive loops and adequate creepage/clearance for the 5.7kVrms isolation rating. The DESAT protection requires an external high-voltage blocking diode and resistor network, and the shunt current sensing input should be filtered to avoid false triggering during normal switching transients. This page synthesizes distributor pricing from DigiKey and LCSC, drop-in alternatives within the same 16-SOIC wide-body footprint, and practical design notes for SiC/IGBT half-bridges not collected in a single place in the manufacturer datasheet.
UCC21732-Q1 - ±10A Isolated SiC/IGBT Gate Driver | TI
The Texas Instruments UCC21732-Q1 is a galvanic isolated single-channel gate driver designed for SiC MOSFETs and IGBTs up to 2121 V DC operating voltage, delivering up to ±10 A peak source and sink current. Housed in a 16-pin SOIC (DW) wide-body package with reinforced capacitive isolation, it provides best-in-class dynamic performance and advanced protection for traction inverter, on-board charger, and industrial power-conversion designs. An isolated gate driver is a semiconductor device that translates a low-voltage PWM command from a controller into a high-current drive signal referenced to the floating gate of a high-voltage power switch (IGBT, SiC MOSFET, GaN HEMT), while providing galvanic isolation between the low-voltage domain and the high-voltage switching node. Within the broader taxonomy, isolated gate drivers sit below MOSFET/IGBT drivers and above optocouplers or transformer-based gate-drive solutions in the power management IC hierarchy. Key features include 5.7 kV RMS reinforced isolation, >150 V/ns common-mode transient immunity (CMTI), integrated 2-level turn-off (STO) for short-circuit protection, and an analog sensing pin (AIN) for temperature or voltage monitoring. The driver supports both unipolar and bipolar gate-drive supplies and is qualified to AEC-Q100 for automotive applications. The UCC21732-Q1 uses TI's SiO2 capacitive isolation technology, delivering 12.8 kV PK surge immunity, longer than 40 years of isolation barrier life, and low part-to-part propagation skew. On-board protection includes DESAT detection, soft turn-off, undervoltage lockout (UVLO) on both VCC and VDD, and an open-drain fault flag for the controller. Typical applications include 800 V automotive traction inverters, EV on-board chargers (OBC), industrial servo drives, solar string inverters, and high-power DC fast-charging stations. The high CMTI and 900 mA soft-turn-off current make it well suited to high-switching-speed SiC FETs where dv/dt noise can otherwise corrupt the gate signal. When designing with this driver, place the bootstrap or isolated supply decoupling capacitors as close to the VCC/VEE/VB/VS pins as possible and keep the DESAT and AIN traces short to avoid false triggering. Choose external gate resistors to balance switching loss and EMI. This page synthesizes manufacturer datasheet parameters, distributor pricing, drop-in alternatives, and practical design notes not collated in the original TI datasheet PDF.
UCC21739QDWRQ1 - 10A Isolated SiC/IGBT Gate Driver | TI
The Texas Instruments UCC21739QDWRQ1 is an automotive-qualified, galvanically isolated single-channel gate driver rated for ±10 A peak source/sink current, designed to drive SiC MOSFETs and IGBTs up to 990 V DC with high common-mode transient immunity (CMTI) and integrated analog sensing. Housed in a 16-pin SOIC (DWR) wide-body package with 3 kV RMS isolation, it combines SiO2 capacitive isolation technology with advanced active protection including DESAT detection, soft turn-off, and isolated analog temperature/voltage feedback. An isolated gate driver is a semiconductor device that transmits gate-drive control signals across an isolation barrier while providing high drive current to rapidly switch power transistors. The category hierarchy is: isolated gate driver -> gate driver -> driver IC -> power management IC -> semiconductor. Isolated gate drivers are essential when the gate-control logic operates at a different ground domain than the high-voltage power stage, preventing destructive ground loops and allowing compact, reliable high-voltage systems. Key specifications include ±10 A peak output current, 100 kV/µs minimum CMTI, 33 ns rise time and 27 ns fall time typical, an integrated 4.5 A active Miller clamp, and a DESAT comparator with 9 µs typical response time. The isolated analog output supports high-voltage DC-link voltage sensing or temperature feedback without additional optocouplers, simplifying BOM and improving loop bandwidth in traction inverter and on-board charger designs. Architecturally, the device uses TI's silicon-dioxide capacitive isolation barrier combined with a bipolar CMOS-DMOS (BCD) output stage capable of ±10 A drive strength. An on-chip 4.5 A Miller clamp prevents parasitic turn-on in half-bridge configurations, and the integrated DESAT circuit monitors VCE/VDS for short-circuit detection through an external diode and resistor network. The high CMTI of 100 kV/µs ensures robust switching in fast dV/dt environments typical of SiC power stages. Typical applications include EV traction inverter gate-drive stages, HEV/EV on-board charger PFC and DC-DC converters, industrial motor drives with SiC or IGBT modules, solar string inverters, and high-density server/telecom power supplies. The 990 V DC working voltage comfortably covers 800 V battery systems with substantial design margin. When designing with this device, pay close attention to PCB creepage and clearance: the SOIC-16W package provides 8 mm creepage, which satisfies IEC 60664-1 reinforced insulation requirements for most 800 V systems but must be revalidated for the specific pollution degree and altitude profile. This page synthesizes distributor pricing, verified TI datasheet parameters, drop-in alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
UCC21750-Q1 - 10A Isolated SiC/IGBT Gate Driver | TI Automotive
The Texas Instruments UCC21750-Q1 is a galvanic isolated single-channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage, delivering ±10-A peak source and sink current in a 16-pin SOIC (DW) wide-body package with 8.0 mm creepage and clearance. It uses SiO2 capacitive isolation rated at 5.7 kVrms reinforced isolation, supporting high-side floating supply up to 2121 VDC for driving high-voltage power switches in traction, renewable, and industrial inverters. A gate driver is a power-management IC that translates low-power PWM control signals from a microcontroller or DSP into the high-current gate charge/discharge pulses needed to switch a power transistor (MOSFET, IGBT, SiC, or GaN). Isolated gate drivers add galvanic isolation between the low-voltage control domain and the high-voltage power domain, enabling safe control of half-bridge and full-bridge topologies in motor drives, solar inverters, and on-board EV chargers. The UCC21750-Q1 sits in the isolated gate-driver sub-category of TI's Power Management portfolio. Key features of the UCC21750-Q1 include fast overcurrent and short-circuit detection with DESAT protection, shunt current-sensing support, fault reporting to the controller, an internal active Miller clamp to prevent parasitic turn-on, and input- and output-side power-supply UVLO. An isolated analog-to-PWM sensor eases temperature or voltage feedback without requiring an extra isolated channel. The high CMTI (>100 V/ns typical) ensures robust operation in fast-switching SiC designs where common-mode transients are severe. Architecturally, the device combines TI's capacitive-isolation technology with a robust gate-drive output stage capable of ±10 A peak drive current. The integrated 4-A internal active Miller clamp provides an additional low-impedance path during turn-off, suppressing dV/dt-induced gate ringing. Programmable DESAT blanking, soft turn-off after fault, and TTL-compatible inputs give designers precise control over SiC and IGBT switching behavior. Typical applications include electric-vehicle traction inverters, on-board EV chargers, solar string inverters, industrial motor drives, and high-density telecom/server power converters using SiC MOSFET power modules. The wide operating temperature range and AEC-Q100 qualification make it suitable for automotive-grade designs under ISO 26262 functional-safety considerations. When designing with the UCC21750-Q1, carefully observe PCB creepage and clearance for the 8.0 mm SOIC-16DW wide-body package, place the DESAT resistor and blanking capacitor close to the IC, and use a Kelvin return path for the gate to avoid ground-bounce issues at high dV/dt. The internal active Miller clamp reduces external BOM but must still be verified against worst-case dV/dt conditions in the specific power module. This page synthesizes TI datasheet specifications, distributor pricing, drop-in alternatives and practical design notes not collated in any single manufacturer document.
UCC21750DW - ±10A 5.7kVrms Isolated SiC/IGBT Gate Driver | TI
The Texas Instruments UCC21750DW is a single-channel isolated gate driver for SiC MOSFETs and IGBTs, providing ±10 A peak source/sink drive current and 5.7 kVrms reinforced isolation in a 16-pin SOIC (DW) package. It supports DC link operating voltages up to 2121 V and integrates DESAT short-circuit protection, internal Miller clamp, and isolated analog sensing for temperature or high-voltage DC-bus feedback. A gate driver for SiC/IGBT is a galvanically isolated amplifier that translates low-voltage PWM logic from a controller into the high-current, high-voltage drive signals required to switch wide-bandgap power devices. Within the power-conversion hierarchy, it sits between the digital controller (DSP/MCU) and the power stage, providing level shifting, isolation barrier crossing, and protection functions that the controller cannot perform directly. Isolated gate drivers are essential in traction inverters, on-board chargers, industrial motor drives, and solar/string inverters where the low-voltage domain must remain safely isolated from the switching node at hundreds of volts. Key features include ±10 A peak output drive, 150 V/ns common-mode transient immunity (CMTI), integrated DESAT with programmable threshold, internal Miller clamp, isolated analog output for VCE/VDS or temperature sensing, soft-turn-off during fault, and under-voltage lockout (UVLO) for both primary and secondary sides. The device operates from -40 °C to +125 °C and is offered in a wide-body SOIC-16 (DW) package that meets IEC 60747-17 reinforced isolation standards. The architecture uses TI's capacitive isolation technology with a SiO2 dielectric barrier, achieving 5.7 kVrms isolation and >100 kV/us CMTI. The driver includes separate source and sink outputs, allowing independent turn-on/turn-off impedance tuning with external gate resistors for EMI and switching-loss optimization. An internal Miller clamp FET prevents parasitic turn-on caused by high dV/dt transients across the gate-drain capacitance of the power switch. Typical applications include EV traction inverters (SiC MOSFET drive up to 800 V bus), on-board chargers and DC fast chargers, industrial servo and AC drives, solar central/string inverters, and solid-state transformers. The wide UVLO range and reinforced isolation make the UCC21750DW particularly well suited to high-reliability industrial and automotive functional-safety applications. When designing with this device, place the decoupling capacitors as close as possible to VCC and VEE pins and minimize the gate-driver loop inductance to below 5 nH for clean switching at high dV/dt. Use a DESAT blanking capacitor selected per the datasheet equations to avoid nuisance trips on SiC devices with fast turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet with cross-brand equivalents and AI-search-ready FAQ content.
UCC23513BQDWYQ1 - 4A/5A 5.7kVrms Isolated Gate Driver SOIC-6 | TI
The Texas Instruments UCC23513BQDWYQ1 is an automotive-qualified, 5.7-kVRMS reinforced-isolation single-channel isolated gate driver in a 6-pin SOIC (DWY) package, delivering 4 A source / 5 A sink peak drive current and featuring 8 V/12 V UVLO options. It is designed as a pin-to-pin compatible upgrade to opto-coupled gate drivers in IGBT and SiC/Si MOSFET drive applications. The driver integrates TI's capacitive isolation technology, providing 5.7 kVRMS reinforced isolation with surge capability up to 12.8 kV, while eliminating the LED aging and CTR degradation inherent to optocouplers. An isolated gate driver is a critical signal-conditioning and level-shifting IC that sits between a low-voltage microcontroller or DSP and a high-voltage, high-current power switch (IGBT, SiC MOSFET, or GaN FET). It performs three essential functions: galvanic isolation for high-voltage safety, level shifting from logic-level PWM inputs to gate-drive voltages, and current amplification to charge and discharge the large gate capacitance of power switches within tens of nanoseconds. UCC23513BQDWYQ1 falls within the isolated gate driver category of the power management IC hierarchy, addressing automotive motor drive, traction inverter, and industrial power-conversion designs. Key features include a wide driver supply range of up to 33 V, common-mode transient immunity (CMTI) of >100 kV/µs, and propagation delay of <100 ns with tight part-to-part matching for synchronous rectification. The Q1 suffix confirms AEC-Q100 qualification for automotive applications, and the SOIC-6 (DWY) wide-body package provides the necessary creepage and clearance for reinforced isolation. Integrated protection features include input-to-output isolation, undervoltage lockout, and thermal shutdown. The capacitive isolation barrier uses TI's proprietary silicon-dioxide-based high-voltage capacitor technology, achieving >100 kV/µs CMTI which prevents false triggering in high dV/dt switching environments. This makes the part particularly suited to SiC MOSFET drives where edge rates exceed 50 kV/µs. The driver accepts CMOS/TTL inputs and supports both 8 V and 12 V UVLO options for direct drive of IGBTs (12 V gate) and SiC MOSFETs (with 8 V option for negative gate bias designs). Typical applications include automotive traction inverters, on-board chargers, DC fast-charging stations, industrial motor drives, solar inverters, and UPS systems. The reinforced isolation makes it suitable for drives operating above 600 V with safety-critical isolation requirements per IEC 61800-5-1. When designing with this device, ensure that the gate-drive supply bypass uses 1 uF/X7R minimum close to VCC and that the gate resistor is sized to limit peak gate current below the 5 A sink rating. Layout creepage must be maintained per IEC 60664-1 for the SOIC-6 wide-body footprint. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
UCC23513BQDWYRQ1 - 4.5A/5.3A Auto Isolated Gate Driver SOIC-6 | TI
The Texas Instruments UCC23513BQDWYRQ1 is an automotive-qualified (AEC-Q100) opto-compatible, single-channel reinforced isolated gate driver housed in a 6-pin SOIC package (DWY). It delivers 4.5 A peak source current and 5.3 A peak sink current, with a 5.7 kV RMS reinforced isolation rating that meets the requirements of IEC 60747-17 reinforced isolation standards. The driver operates from a wide 9.5 V to 33 V supply range, making it suitable for IGBT, power MOSFET, and SiC MOSFET gate drive applications. An isolated gate driver is a critical component in power electronics, providing galvanic isolation between low-voltage control logic and high-voltage power switching devices. Gate drivers fall within the broader category of power management and driver ICs, serving as the interface between microcontrollers, DSPs, or gate-driver controllers and the high-current gates of IGBTs, MOSFETs, and SiC FETs. The UCC23513BQDWYRQ1 uses TI's proprietary capacitive isolation technology to achieve 5.7 kV RMS reinforced isolation with low propagation delay and high common-mode transient immunity, making it functionally pin-compatible with traditional opto-isolated gate drivers while delivering superior reliability and temperature performance. Key features include 4.5 A source / 5.3 A sink peak output current, 105 ns typical propagation delay, 35 ns part-to-part delay matching, 100 kV/us minimum common-mode transient immunity (CMTI), and 8 mm creepage/clearance package design. The device supports bipolar supply operation for driving IGBTs and SiC FETs requiring negative gate drive voltage. Its UVLO threshold of 8 V (typical) protects power switches against insufficient drive voltage. The wide operating temperature range of -40°C to +125°C suits automotive under-hood and industrial environments. Typical applications include automotive traction inverters, on-board chargers (OBC), DC fast charging stations, industrial motor drives, solar inverters, and server/telecom power supplies. Its opto-compatible input stage allows direct replacement of HCPL-3120-style optocouplers in existing designs without PCB changes, simplifying upgrades from older discrete isolator solutions to modern integrated gate drivers. When designing with this part, ensure that the local VCC bypass capacitance (typically 1 uF to 10 uF ceramic) is placed within 2 mm of the VCC pin. Account for the bootstrap supply current in high-side configurations, and never exceed the 33 V absolute maximum VCC rating. The driver's input is current-driven like an optocoupler, requiring the designer's choice of input LED current-limiting resistor. This page synthesizes distributor inventory, AEC-Q100 grade variants, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select the right isolated gate driver for automotive and industrial applications.
UCC23513DWY - 4.5A/5.3A 5.7kVrms Isolated Gate Driver | TI
The Texas Instruments UCC23513DWY is a single-channel opto-compatible reinforced isolated gate driver delivering 4.5 A source and 5.3 A sink peak output current with 5.7 kVrms reinforced isolation, housed in a 6-pin SOIC (DWY) package with wide-body creepage. It is a pin-to-pin, drop-in upgrade for traditional opto-isolated gate drivers, replacing optocoupler-based designs with TI's capacitive isolation technology to eliminate aging-related CTR degradation. An isolated gate driver is a galvanically isolated amplifier that translates a low-voltage control logic signal (typically 3.3 V or 5 V from a microcontroller or DSP) into a high-current drive signal capable of switching a power semiconductor such as an IGBT, SiC MOSFET, or GaN FET. In the broader taxonomy, isolated gate drivers belong to the power management category between gate driver ICs and isolators, and the UCC23513 specifically combines both functions in a single package, providing reinforced isolation per IEC 60747-17 (certification to be confirmed) while driving the gates of high-voltage power devices in switch-mode power supplies and motor drives. Key features include a maximum 33 V output driver supply voltage, 8 V or 12 V VCC UVLO options, rail-to-rail output swing, 105 ns maximum propagation delay, 25 ns maximum part-to-part delay matching, 35 ns maximum pulse-width distortion, and 150 kV/µs minimum common-mode transient immunity (CMTI). The single-channel 6-SOIC package provides minimum 8.5 mm creepage and clearance suitable for reinforced isolation in industrial and renewable energy systems. The device uses TI's proprietary capacitive coupling isolation technology, replacing the LED/photodiode chain used in optocouplers. Compared to optocouplers, the UCC23513 offers superior temperature stability (no CTR drift over temperature or aging), lower propagation delay variation, and higher CMTI. The integrated 8 V or 12 V VCC UVLO with hysteresis protects SiC and IGBT power devices from partial-turn-on during startup. Typical applications include driving IGBTs in industrial motor drives, driving SiC MOSFETs in EV traction inverters and solar inverters, driving GaN FETs in telecom and server power, and replacing legacy optocoupler gate drivers in welding inverters and UPS systems. The wide VCC range supports both standard 15 V and emerging 12 V SiC/IGBT gate drive rails. When designing with the UCC23513DWY, place the VCC bypass capacitor directly at pins 5-6 with a 1 µF X7R ceramic or larger to handle peak gate charge currents. The driver side does not require isolated DC/DC bias - only a single VCC supply per channel is needed for the output stage; input side is powered directly from the controller side supply. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from TI's UCC23513 datasheet and reference designs, providing engineering context not duplicated in the manufacturer documentation alone.