1ED3124MC12HXUMA1 vs 2ED2106S06FXUMA1 对比

详细并排对比 1ED3124MC12HXUMA1 出自 Infineon 和 2ED2106S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中
Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 量产中

规格对比

参数 1ED3124MC12HXUMA1 2ED2106S06FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.45 $0.78
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) High-Side and Low-Side (Half-Bridge)
Number of Drivers 1 2
输出数量 1 2 (1 high-side, 1 low-side)
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
上升时间 15 ns —
下降时间 30 ns —
工作温度 -40 C to +125 C —
封装 PG-DSO-8 (DSO-8) PG-DSO-8-69 (DSO-8)
安装类型 Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
RoHS 状态 Compliant —
Offset Voltage (Voffset max) — 650 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Input Logic Compatibility — CMOS, TTL
Propagation Delay (typ.) — 100 ns
引脚数 — 8
Bootstrap Diode — Integrated
工作温度范围 — -40C to +125C
Packaging — Tape & Reel
输出类型 — Half-Bridge, Non-Inverting

数据手册与资源

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