2ED21064S06JXUMA1 vs 2ED2103S06FXUMA1 对比

详细并排对比 2ED21064S06JXUMA1 出自 Infineon 和 2ED2103S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ 量产中
Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 量产中

规格对比

参数 2ED21064S06JXUMA1 2ED2103S06FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.85 $0.94
功能 High-Side and Low-Side Gate Driver Half-Bridge Gate Driver
Configuration Half-Bridge (2 outputs, non-inverting) Non-Inverting
拓扑 High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated Integrated
Input Logic Compatibility 3.3 V / 5 V CMOS —
工作温度 -40C to +125C —
封装 PG-DSO-14 (14-pin SOIC) PG-DSO-8-69 (DSO-8 with exposed pad)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS 状态 ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
工作温度范围 — -40C to +125C

数据手册与资源

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