2ED21064S06JXUMA1 vs 2ED2103S06FXUMA1 Vergleich

Detaillierter Direktvergleich von 2ED21064S06JXUMA1 von Infineon und 2ED2103S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 2ED21064S06JXUMA1 2ED2103S06FXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,85 $0,94
Funktion High-Side and Low-Side Gate Driver Half-Bridge Gate Driver
Configuration Half-Bridge (2 outputs, non-inverting) Non-Inverting
Topologie High-Side, Low-Side with integrated bootstrap diode —
Maximum Offset / Boot Voltage 650 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Source Current (typical) 0.29 A —
Sink Current (typical) 0.7 A —
Rise Time (typical) [DATA_NEEDED: rise time] —
Fall Time (typical) [DATA_NEEDED: fall time] —
Propagation Delay (typical) 100 ns —
Channel-to-Channel Delay Match [DATA_NEEDED: channel-to-channel delay match] —
Under-Voltage Lockout Yes (both channels) —
Bootstrap Diode Integrated Integrated
Input Logic Compatibility 3.3 V / 5 V CMOS —
Betriebstemperatur -40C to +125C —
Gehäuse PG-DSO-14 (14-pin SOIC) PG-DSO-8-69 (DSO-8 with exposed pad)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS-Status ROHS3 Compliant Compliant
Negative Gate Drive Robustness -0.7 V —
Technology — High-Voltage Level Shift (SOI)
Number of Drivers — 2 (high-side + low-side)
Driven Device Type — IGBT, N-Channel MOSFET
High-Side Offset Voltage (Max) — 650 V
Bootstrap Voltage (Max) — 675 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Logic Input Compatibility — 3.3 V / 5 V
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Betriebstemperaturbereich — -40C to +125C

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