2ED2106S06FXUMA1 vs IR2114SSPBF 对比

详细并排对比 2ED2106S06FXUMA1 出自 Infineon 和 IR2114SSPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 量产中

规格对比

参数 2ED2106S06FXUMA1 IR2114SSPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $3.70
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) Half-bridge gate driver
Source Current (typ.) 0.29 A 2 A
Sink Current (typ.) 0.7 A 3 A
Input Logic Compatibility CMOS, TTL 3.3 V / 5 V CMOS/LSTTL
Propagation Delay (typ.) 100 ns 50 ns
输出数量 2 (1 high-side, 1 low-side) 2 (high-side + low-side)
Number of Drivers 2 —
引脚数 8 —
封装 PG-DSO-8-69 (DSO-8) 24-SSOP (7.80 mm wide, 1.75 mm height)
安装类型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作温度范围 -40C to +125C —
Packaging Tape & Reel —
输出类型 Half-Bridge, Non-Inverting —
拓扑 — Non-inverting
Offset (high-side) Voltage (max) — 600 V
Gate Drive Supply (VCC) — 10 V to 20 V
Logic Supply (VDD) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 25 V (with respect to VS)
Rise / Fall Time (typ.) — [DATA_NEEDED: rise/fall time]
UVLO Thresholds — VCC and VBS, internally set
Integrated Bootstrap Diode — Yes
Over-Current Shutdown — Yes (programmable, with FAULT output)
工作温度 — -40 C to +125 C
RoHS 状态 — Compliant

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