2ED2106S06FXUMA1 vs IRS2104STRPBF 对比

详细并排对比 2ED2106S06FXUMA1 出自 Infineon 和 IRS2104STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 量产中
Infineon
IRS2104STRPBF IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF ✓ 量产中

规格对比

参数 2ED2106S06FXUMA1 IRS2104STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.45
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) —
Source Current (typ.) 0.29 A 0.29 A
Sink Current (typ.) 0.7 A 0.6 A
Input Logic Compatibility CMOS, TTL —
Propagation Delay (typ.) 100 ns 150 ns
输出数量 2 (1 high-side, 1 low-side) —
Number of Drivers 2 —
引脚数 8 —
封装 PG-DSO-8-69 (DSO-8) 8-Lead SOIC (SOIC-8)
安装类型 Surface Mount Surface Mount
Bootstrap Diode Integrated —
工作温度范围 -40C to +125C —
Packaging Tape & Reel —
输出类型 Half-Bridge, Non-Inverting —
Product Type — Half-Bridge Gate Driver IC
拓扑 — Half-Bridge (High-Side + Low-Side)
Number of Channels — 2 (HS + LS, dependent)
High-Side Offset Voltage (VS) — -5 V to +600 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Rise Time (typ.) — 35 ns
Fall Time (typ.) — 70 ns
Quiescent Current (typ.) — 150 uA
Undervoltage Protection — Yes (VCC and VBS UVLO)
Shutdown Pin — Yes (SD, active-low per typical usage)
Logic Input Compatibility — Standard CMOS / LSTTL
工作结温 — -40C to +150C
MSL 等级 — 2 (1 year floor life per datasheet)
Qualification Level — Industrial
RoHS 状态 — Compliant (PbF suffix)

数据手册与资源

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