2EDN7533RXTMA1 vs 1EDN7511BXUSA1 对比

详细并排对比 2EDN7533RXTMA1 出自 Infineon 和 1EDN7511BXUSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDN7533RXTMA1 2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon

2EDN7533RXTMA1 ✓ 量产中

规格对比

参数 2EDN7533RXTMA1 1EDN7511BXUSA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.55 $0.95
功能 Dual-channel low-side gate driver —
Number of Channels 2 —
Input Polarity Inverting —
Peak Source/Sink Output Current 5 A —
Output Resistance (Pull-up, typ.) 0.5 ohm —
Output Resistance (Pull-down, typ.) 0.3 ohm —
Propagation Delay (typ.) 19 ns —
Channel-to-Channel Delay Matching 1.3 ns (typ.) —
Rise/Fall Time 1.7 ns / 1.5 ns (typ., 1 nF load) —
Input Logic Compatibility LV-TTL TTL / CMOS
Input Voltage Tolerance -12 V to +22 V —
Supply Voltage VDD (recommended) 4.5 V to 20 V —
Supply Voltage VDD (absolute max) 25 V —
Under-Voltage Lockout Yes (per channel) —
工作结温 -40 C to +150 C —
封装 PG-TSSOP-8 (HTSSOP) with exposed pad PG-SOT23-6-2 (6-pin SOT-23)
安装类型 Surface Mount Surface Mount (SMD/SMT)
RoHS 状态 Compliant Compliant
Driver Type — Low-Side, Single Channel
Number of Drivers — 1
输出数量 — 1
Configuration — Inverting, Non-Inverting
Peak Source Current — 4 A
Peak Sink Current — 8 A
上升时间 — [DATA_NEEDED: rise time ns]
下降时间 — 4.5 ns
Propagation Delay — ±5 ns (matched)
工作电源电压 — [DATA_NEEDED: VCC range V]
UVLO Protection — Yes (integrated)
Output Stage — True low-impedance complementary rail-to-rail
工作温度范围 — -40 C to +150 C
Packaging — Cut Tape (Tape & Reel available)
Lead-Free — Yes

数据手册与资源

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