1EDN7511BXUSA1 - 4A/8A Low-Side Gate Driver, SOT-23-6 | Infineon
料号： 1EDN7511BXUSA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.35 | $135.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.95 | $950.00 |
1EDN7511BXUSA1 概述
A low-side gate driver IC is a specialized power-management semiconductor that sits between a low-power control IC (such as a PWM controller or microcontroller) and the gate of a power switch, typically a MOSFET or GaN FET. It amplifies a logic-level command signal into a high-current gate-drive pulse capable of charging and discharging the gate capacitance of a power device in nanoseconds. Low-side drivers are the simplest gate-driver topology, referencing the gate return path to the switch's source pin (typically ground), and they are widely used in non-isolated synchronous-rectifier, buck-converter, motor-drive, and Class-D audio amplifier designs. Within the broader taxonomy, a low-side gate driver falls under gate driver IC → power management IC → semiconductor.
Key features of the 1EDN7511BXUSA1 include a wide operating voltage range, support for both TTL and CMOS input logic thresholds, sub-10 ns rise and fall times into a 1 nF load, and separate source/sink outputs that allow tuning of turn-on and turn-off dI/dt via an external gate resistor. The rugged output stage handles Miller-platform induced negative transients at the switch node, and integrated under-voltage lockout (UVLO) protects the power switch from insufficient gate drive.
The 1EDN7511B family uses a true low-impedance complementary output buffer with matched pull-up and pull-down transistors, achieving short propagation delays that support high-frequency operation above 1 MHz in advanced GaN-based designs. Per Infineon's product brief, the device's design enables both hard-switched and resonant topologies where switching losses directly constrain system efficiency. The pinout and packages are fully compatible to the industry standard, allowing the 1EDN75x/1EDN85x Gate Driver ICs to serve drop-in replacements for existing designs.
Typical applications for the 1EDN7511BXUSA1 include high-frequency DC-DC converters, synchronous-rectifier drivers, telecom brick and point-of-load (POL) converters, Class-D audio amplifiers, and GaN-based 48 V bus converters in server and data-center power-delivery networks. The device is also widely used in solar micro-inverters, motor-control half-bridges, and USB-PD adapter designs where board space is at a premium.
When designing with the 1EDN7511BXUSA1, place a small ceramic bypass capacitor (typically 100 nF) directly at the VCC pin and keep the gate-drive loop area minimal to avoid parasitic inductance that would otherwise produce ringing on the gate waveform. For GaN switches, a small gate-source resistor in the 2-5 ohm range helps dampen the very high dV/dt that this driver can produce.
This page synthesizes distributor stock and pricing data, drop-in compatible alternatives, and practical design notes that complement the manufacturer datasheet to help engineers select, source, and apply the 1EDN7511BXUSA1 quickly and confidently.
直接替换替代料： 1EDN7511BXUSA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： 1EDN7511BXUSA1 （相同外形与封装尺寸） ——差异在于 Package, Function, Input Type, Input Logic Compatibility, Operating Temperature Range.
快速对比工具——选择替代料号进行并排对比：
1EDN7512GXTMA1
✅ 直接替换✓ 有现货
$0.82 / 个
查看数据手册 →1EDN7550BXTSA1
✅ 直接替换✓ 有现货
$0.59 / 个
查看数据手册 →2EDN7533BXTSA1
✅ 直接替换✓ 有现货
$0.51 / 个
查看数据手册 →2EDN7533RXTMA1
✅ 直接替换✓ 有现货
$0.55 / 个
查看数据手册 →2EDN7534RXTMA1
✅ 直接替换✓ 有现货
$0.4 / 个
查看数据手册 →2EDN8523RXTMA1
✅ 直接替换📋 参考替代料（不在目录中）
1EDN7511BXUSA1 最大额定值与电气特性
| Driver Type | Low-Side, Single Channel |
| Number of Drivers | 1 |
| 输出数量 | 1 |
| Configuration | Inverting, Non-Inverting |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| 下降时间 | 4.5 ns |
| Propagation Delay | ±5 ns (matched) |
| Input Logic Compatibility | TTL / CMOS |
| UVLO Protection | Yes (integrated) |
| Output Stage | True low-impedance complementary rail-to-rail |
| 工作温度范围 | -40 C to +150 C |
| 封装 | PG-SOT23-6-2 (6-pin SOT-23) |
| 安装类型 | Surface Mount (SMD/SMT) |
| Packaging | Cut Tape (Tape & Reel available) |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
1EDN7511BXUSA1 引脚配置
| 引脚 1 | VCC — Supply voltage input; decouple with 100 nF ceramic capacitor to GND |
| 引脚 2 | IN+ — Non-inverting logic input (TTL/CMOS compatible) |
| 引脚 3 | IN- — Inverting logic input (TTL/CMOS compatible); tie to VCC if not used |
| 引脚 4 | GND — Ground return for logic and gate-drive loop |
| 引脚 5 | OUT — Gate drive output to power MOSFET or GaN switch gate |
| 引脚 6 | NC — Not connected (per datasheet) |
典型应用
1EDN7511BXUSA1 适用于 6 应用s: High-Frequency Synchronous Buck Converter, GaN-Based 48 V Bus Converter (Server / Data Center), Class-D Audio Amplifier Output Stage, Synchronous Rectifier Driver in Telecom Brick Converter, Solar Micro-Inverter Power Stage, USB-PD Adapter Power Stage.
High-Frequency Synchronous Buck Converter
The 1EDN7511BXUSA1's 4 A source / 8 A sink drive and ±5 ns matched propagation delay make it an excellent low-side switch driver in high-frequency synchronous buck converters. In a typical 12 V-to-1 V buck running at 1 MHz, the driver rapidly charges and discharges the low-side MOSFET gate (typically 5-15 nC Qg) within nanoseconds, minimizing switching losses that would otherwise dominate efficiency at high frequency. Its sub-10 ns rise/fall into a 1 nF load per Infineon's product brief keeps the MOSFET in the linear region for only picoseconds, directly improving overall system efficiency above 95%. The SOT-23-6 footprint enables compact point-of-load designs on space-constrained motherboards.
推荐
GaN-Based 48 V Bus Converter (Server / Data Center)
For GaN-based 48 V bus converters in server and data-center power-delivery networks, the 1EDN7511BXUSA1's 8 A sink current and ultra-fast switching capability are critical. GaN FETs have very low gate charge (typically 1-5 nC) but require very high dV/dt transients that expose gate drivers to Miller-induced negative voltage spikes. The driver's rugged complementary output stage handles these transients per Infineon's product page, while the matched ±5 ns propagation delay ensures precise timing in half-bridge topologies. A 2-5 ohm gate-source resistor is recommended to dampen ringing. The SOT-23-6 footprint allows the driver to be placed within 5 mm of the GaN switch, minimizing parasitic gate-loop inductance.
推荐
Class-D Audio Amplifier Output Stage
In Class-D audio amplifier output stages, the 1EDN7511BXUSA1 drives the low-side MOSFET of the half-bridge PWM output. Audio Class-D amplifiers switch at 250 kHz to 1 MHz and require low propagation delay to minimize dead-time distortion that would degrade THD+N. Per the Infineon product brief, the driver's ±5 ns matched delay and true rail-to-rail output maintain symmetric dead-time regardless of duty cycle, supporting THD+N below 0.01%. The SOT-23-6 small footprint also enables compact amplifier modules where multiple driver channels must fit on a small PCB.
推荐
Synchronous Rectifier Driver in Telecom Brick Converter
The 1EDN7511BXUSA1 drives the synchronous rectifier MOSFET in isolated telecom brick DC-DC converters (e.g., 48 V to 12 V, 48 V to 5 V). Its 8 A sink current rapidly discharges the SR MOSFET gate to minimize body-diode conduction, improving efficiency by 1-2% compared to passive rectification. The driver's TTL/CMOS-compatible inputs accept logic-level signals directly from the secondary-side SR controller, simplifying the SR timing circuit. Wide operating temperature range (-40 C to +150 C) supports the harsh thermal environment inside sealed telecom bricks.
推荐
Solar Micro-Inverter Power Stage
In solar micro-inverter designs converting per-panel DC (typically 25-40 V) to AC grid power, the 1EDN7511BXUSA1 drives the low-side switch of the high-frequency inversion stage. The driver's 4 A source capability easily handles the gate charge of 100-200 V MOSFETs at switching frequencies of 50-100 kHz. The wide input voltage range and -40 C to +150 C operating temperature support outdoor solar installations where ambient temperatures can exceed 70 C in direct sun. The SOT-23-6 miniature footprint fits inside the compact micro-inverter housing mandated for residential PV installations.
推荐
USB-PD Adapter Power Stage
In USB Power Delivery (USB-PD) adapters that negotiate 5 V to 20 V output at up to 100 W, the 1EDN7511BXUSA1 drives the synchronous rectifier MOSFET in the secondary-side rectification stage. Modern USB-PD adapters use quasi-resonant flyback or active-clamp topologies switching at 100-200 kHz, where the driver's ±5 ns matched delay and 8 A sink current minimize SR body-diode conduction and improve adapter efficiency above 93%. The SOT-23-6 footprint fits easily alongside the SR controller IC in the densely-packed adapter PCB typical of GaN-based 65 W and 100 W USB-PD designs.
推荐
推荐产品汇总
工程参考数据： 1EDN7511BXUSA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 1EDN7512GXTMA1 | 1EDN7550BXTSA1 | 2EDN7533BXTSA1 | 2EDN7533RXTMA1 | 2EDN7534RXTMA1 | 2EDN8523RXTMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-SOT23-6-2 | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same | PG-SOT23-6-2 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Driver Type | Low-side, single channel | Low-side, single channel | Low-side, single channel | Low-side, dual channel | Low-side, dual channel | Low-side, dual channel | Low-side, dual channel |
| Operating Temperature Range | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C | -40 C to +150 C |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
关键差异点
- Industry-standard SOT-23-6 pinout enabling drop-in replacement （对比 Texas Instruments UCC27614 (SON-6 / WSON-6))
- Asymmetrical source/sink current optimized for GaN and MOSFET switching （对比 Texas Instruments UCC27517 (1.8 A/2.5 A low-side driver))
- Higher peak source current option in same footprint （对比 Infineon 1EDN7512GXTMA1 (5 A/9 A))
设计说明
Place a 100 nF ceramic bypass capacitor as close as possible to the VCC pin (Pin 1) and GND (Pin 4) to provide a low-inductance supply loop. For high-frequency switching above 500 kHz, add a bulk 1-10 uF capacitor on the VCC rail near the driver. Keep the gate-drive loop area (OUT pin → gate → source → GND → back to driver GND) minimal - aim for loop area below 5 mm² to avoid parasitic inductance that causes gate-voltage ringing and overshoot. The PG-SOT23-6-2 thermal pad should be soldered to a small copper pour to aid heat spreading.
Do not leave the IN+ or IN- input floating - both inputs must be driven to a defined logic state (tie unused input to VCC or GND per the datasheet truth table) to prevent the output stage from going into a half-on state that would cause shoot-through. For GaN switches, add a 2-5 ohm gate-source resistor to dampen the very high dV/dt this driver can produce and protect the gate from over-voltage transients. Avoid long PCB traces between the driver OUT pin and the MOSFET gate - every 10 mm of trace adds approximately 10 nH of parasitic inductance.
When driving GaN FETs, the 1EDN7511BXUSA1's high dV/dt (>50 V/ns) can inject common-mode current into the input logic traces via the driver's input-to-output capacitance. To prevent logic-side noise, add a small ferrite bead or 10-100 ohm resistor in series with the IN pin, and keep the input traces short and away from the OUT trace. If using both IN+ and IN- for differential drive, ensure the input traces are routed as a tightly-coupled differential pair. For Miller-plateau-induced negative transients at the switch node, a -2 V gate-source TVS or Schottky clamp may be required when driving very fast GaN switches.
合规信息
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - choose automotive-grade gate driver variant if required.
