2N7002H6327XTSA2 vs BSS119NH6327XTSA1 对比
详细并排对比 2N7002H6327XTSA2 出自 Infineon 和 BSS119NH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2N7002H6327XTSA2 | BSS119NH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.08 | $0.12 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS (Planar) | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 工作温度范围 | -55C to +150C (Tj) | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] |
| 封装 | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| 安装类型 | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 [DATA_NEEDED: confirm from datasheet] |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Qualification | Industrial / Commercial Grade | AEC-Q101 (automotive grade) |
| FET Technology | — | Enhancement-mode, planar N-channel |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TA=25°C | — | 190 mA |
| Power Dissipation (PD) at TA=25°C | — | 500 mW |
| Drain-Source On-Resistance (RDS(on)) max | — | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] |
| Gate Drive Voltage (VGS) | — | ±20 V max |
| Packaging | — | Tape & Reel (3,000 pcs/reel) |