2N7002H6327XTSA2 vs BSS83PH6327XTSA1 对比
详细并排对比 2N7002H6327XTSA2 出自 Infineon 和 BSS83PH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2N7002H6327XTSA2 | BSS83PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.08 | $0.11 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS (Planar) | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| 工作温度范围 | -55C to +150C (Tj) | — |
| 封装 | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| 安装类型 | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | Automotive grade per Infineon |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 330 mA |
| Pulsed Drain Current (IDM) | — | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | — | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at TA=25C | — | 360 mW |
| 工作结温 | — | -55 C to +150 C |
| Process Technology | — | SIPMOS / OptiMOS |