2N7002H6327XTSA2 vs BSS83PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von 2N7002H6327XTSA2 von Infineon und BSS83PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2N7002H6327XTSA2 | BSS83PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,08 | $0,11 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS (Planar) | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 60 V | -60 V |
| Continuous Drain Current (ID) | 300 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 3 ohm max @ VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Betriebstemperaturbereich | -55C to +150C (Tj) | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Channel Mode | Enhancement | — |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Qualification | Industrial / Commercial Grade | Automotive grade per Infineon |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 330 mA |
| Pulsed Drain Current (IDM) | — | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | — | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at TA=25C | — | 360 mW |
| Betriebs-Sperrschichttemperatur | — | -55 C to +150 C |
| Process Technology | — | SIPMOS / OptiMOS |