BSC009NE2LSATMA1 vs BSC009NE2LS5IATMA1 对比

详细并排对比 BSC009NE2LSATMA1 出自 Infineon 和 BSC009NE2LS5IATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC009NE2LSATMA1 BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon

BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon

BSC009NE2LSATMA1 ✓ 量产中

规格对比

参数 BSC009NE2LSATMA1 BSC009NE2LS5IATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.38 $1.02
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 25V —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS™ 5 (25V/30V family)
Drain-Source Voltage (V_DS) 25 V —
Continuous Drain Current (I_D) at T_a 41 A —
Continuous Drain Current (I_D) at T_c 100 A (Mouser listing), 255 A pulsed (DigiKey) —
Pulsed Drain Current (I_DM) 255 A —
R_DS(on) Max @ V_GS=10V 0.9 mOhm —
Power Dissipation (T_a) 2.5 W —
Power Dissipation (T_c) 96 W —
Gate Threshold Voltage V_GS(th) Typ [DATA_NEEDED: V_GS(th) typical value] —
工作温度范围 -55C to +150C (TJ) -55°C to +150°C
封装 / 外壳 PG-TDSON-8-7 (TDSON-8 FL) —
安装类型 Surface Mount Surface Mount
引脚数量 8 —
MSL 等级 1 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Manufacturer Part Number — BSC009NE2LS5IATMA1
晶体管类型 — N-Channel MOSFET
Configuration — Single with built-in diode
Drain-Source Voltage (V_DS) max — 25 V
Gate-Source Voltage (V_GS) max — 20 V
Gate-Threshold Voltage V_GS(th) typ — 1.7 V (range 1.0-2.0 V)
R_DS(on) max @ V_GS=10V — 0.95 mΩ
Continuous Drain Current (I_D) @ T_A=25°C — 40 A
Continuous Drain Current (I_D) @ T_C=25°C — 217 A (pulsed, datasheet rating)
Power Dissipation (P_D) @ T_A — 2.5 W
Power Dissipation (P_D) @ T_C — 74 W
Total Gate Charge (Q_G) typ — 23 nC @ V_GS=0-4.5V
Input Capacitance (C_iss) typ — 3200 pF
封装 — PG-TDSON-8-7 (SuperSO8 5x6 mm)
Terminal Finish — Matte Tin (e3 per JESD-609)
Number of Terminals — 8

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