BSC009NE2LSATMA1 vs BSC009NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSC009NE2LSATMA1 by Infineon and BSC009NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC009NE2LSATMA1
BSC009NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 0.9mOhm | Infineon
BSC009NE2LSATMA1 β ActiveInfineon
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - 25V 0.95mΞ© 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSC009NE2LSATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 25V | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOSβ’ 5 (25V/30V family) |
| Drain-Source Voltage (V_DS) | 25 V | β |
| Continuous Drain Current (I_D) at T_a | 41 A | β |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) | β |
| Pulsed Drain Current (I_DM) | 255 A | β |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | β |
| Power Dissipation (T_a) | 2.5 W | β |
| Power Dissipation (T_c) | 96 W | β |
| Gate Threshold Voltage V_GS(th) Typ | [DATA_NEEDED: V_GS(th) typical value] | β |
| Operating Temperature Range | -55C to +150C (TJ) | -55Β°C to +150Β°C |
| Package / Case | PG-TDSON-8-7 (TDSON-8 FL) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Manufacturer Part Number | β | BSC009NE2LS5IATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | β | 25 V |
| Gate-Source Voltage (V_GS) max | β | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | β | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | β | 0.95 mΞ© |
| Continuous Drain Current (I_D) @ T_A=25Β°C | β | 40 A |
| Continuous Drain Current (I_D) @ T_C=25Β°C | β | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | β | 2.5 W |
| Power Dissipation (P_D) @ T_C | β | 74 W |
| Total Gate Charge (Q_G) typ | β | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | β | 3200 pF |
| Package | β | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Terminal Finish | β | Matte Tin (e3 per JESD-609) |
| Number of Terminals | β | 8 |