BSC009NE2LSATMA1 vs BSC009NE2LS5IATMA1 Comparación
Comparación detallada lado a lado de BSC009NE2LSATMA1 por Infineon y BSC009NE2LS5IATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC009NE2LSATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,38 | $1,02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 25V | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS™ 5 (25V/30V family) |
| Drain-Source Voltage (V_DS) | 25 V | — |
| Continuous Drain Current (I_D) at T_a | 41 A | — |
| Continuous Drain Current (I_D) at T_c | 100 A (Mouser listing), 255 A pulsed (DigiKey) | — |
| Pulsed Drain Current (I_DM) | 255 A | — |
| R_DS(on) Max @ V_GS=10V | 0.9 mOhm | — |
| Power Dissipation (T_a) | 2.5 W | — |
| Power Dissipation (T_c) | 96 W | — |
| Gate Threshold Voltage V_GS(th) Typ | [DATA_NEEDED: V_GS(th) typical value] | — |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | -55°C to +150°C |
| Encapsulado / Carcasa | PG-TDSON-8-7 (TDSON-8 FL) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant | Compliant |
| Manufacturer Part Number | — | BSC009NE2LS5IATMA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | — | 25 V |
| Gate-Source Voltage (V_GS) max | — | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | — | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | — | 0.95 mΩ |
| Continuous Drain Current (I_D) @ T_A=25°C | — | 40 A |
| Continuous Drain Current (I_D) @ T_C=25°C | — | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | — | 2.5 W |
| Power Dissipation (P_D) @ T_C | — | 74 W |
| Total Gate Charge (Q_G) typ | — | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | — | 3200 pF |
| Encapsulado | — | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Terminal Finish | — | Matte Tin (e3 per JESD-609) |
| Number of Terminals | — | 8 |