BSC016N06NSATMA1 vs IPD135N03LGATMA1 对比

详细并排对比 BSC016N06NSATMA1 出自 Infineon 和 IPD135N03LGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC016N06NSATMA1 BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 ✓ 量产中
Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ 量产中

规格对比

参数 BSC016N06NSATMA1 IPD135N03LGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.65 $0.22
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS™ 5 60V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID, Tc) 100 A —
Continuous Drain Current (ID, TA) 30 A —
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ —
Total Gate Charge (Qg) 71 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: gate threshold voltage]
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 139 W —
工作温度范围 -55 °C to +150 °C -55°C to +175°C (TJ max typical for OptiMOS)
封装 PG-TDSON-8 FL (SuperSO8 5x6) —
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Gate Drive (recommended) 10 V —
Technology OptiMOS™ 5 —
Series — OptiMOS™
晶体管类型 — N-Channel MOSFET
Continuous Drain Current (ID) — 30 A (Tc)
Power Dissipation (PD) — 31 W (Tc)
封装 / 外壳 — PG-TO252-3 (DPAK), Surface Mount
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at 10V VGS]
Gate Charge (Qg) — Ultra-low (per OptiMOS™ family spec)
Output Charge (Qoss) — Ultra-low (per OptiMOS™ family spec)
Lead-Free Finish — Yes
Qualification — Industrial (Infineon OptiMOS™ standard grade)

数据手册与资源

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