BSC016N06NSATMA1 vs IPD135N03LGATMA1 Comparison

Detailed side-by-side comparison of BSC016N06NSATMA1 by Infineon and IPD135N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Active

Specification Comparison

Parameter BSC016N06NSATMA1 IPD135N03LGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.22
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS™ 5 60V
Channel Type N-Channel
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID, Tc) 100 A
Continuous Drain Current (ID, TA) 30 A
On-Resistance RDS(on) max @ VGS=10V 1.6 mΩ
Total Gate Charge (Qg) 71 nC
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: gate threshold voltage]
Power Dissipation (TA) 2.5 W
Power Dissipation (TC) 139 W
Operating Temperature Range -55 °C to +150 °C -55°C to +175°C (TJ max typical for OptiMOS)
Package PG-TDSON-8 FL (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Gate Drive (recommended) 10 V
Technology OptiMOS™ 5
Series OptiMOS™
Transistor Type N-Channel MOSFET
Continuous Drain Current (ID) 30 A (Tc)
Power Dissipation (PD) 31 W (Tc)
Package / Case PG-TO252-3 (DPAK), Surface Mount
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS]
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec)
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec)
Lead-Free Finish Yes
Qualification Industrial (Infineon OptiMOS™ standard grade)

Datasheets & Resources

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