BSC027N04LSGATMA1 vs BSC059N04LS6ATMA1 对比

详细并排对比 BSC027N04LSGATMA1 出自 Infineon 和 BSC059N04LS6ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ 量产中

规格对比

参数 BSC027N04LSGATMA1 BSC059N04LS6ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $0.74
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) max ±20 V +/-20 V
Continuous Drain Current (ID) at Ta=25°C 24 A —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ —
Power Dissipation (Ta=25°C) 2.5 W —
功耗(TC=25°C) 83 W —
工作温度范围 -55°C to +150°C -55C to +150C
封装 PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-6 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
Technology OptiMOS 3 (Trench) OptiMOS 6 (N-channel MOSFET)
MSL 等级 1 —
RoHS 状态 Compliant Compliant
无卤 Yes —
Continuous Drain Current (ID) at TA=25C — 17 A
Continuous Drain Current (ID) at TC=25C — 49 A
Pulsed Drain Current (ID,pulse) at TC=25C — 59 A
On-Resistance RDS(on) max — 5.9 mOhm at VGS=10 V
Total Power Dissipation at TA=25C — 3 W
Total Power Dissipation at TC=25C — 38 W
Diode Continuous Forward Current (IS) — 38 A at TC=25C
Diode Pulse Current (IS,pulse) — 236 A at TC=25C
Lead-Free — Yes

数据手册与资源

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