BSC097N06NSATMA1 vs BSC0921NDIATMA1 对比
详细并排对比 BSC097N06NSATMA1 出自 Infineon 和 BSC0921NDIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC097N06NSATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.38 | $0.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | 31 A (per channel, package-limited) |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| 工作结温 | -55C to +150C | — |
| 封装 / 外壳 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 25V (N-channel) |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (Unlimited) | 1 (per Infineon OptiMOS family) |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| 封装 | — | PG-TISON-8 (8-pin, exposed pad) |
| 工作温度 | — | -55C to +150C (junction) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |