BSC097N06NSATMA1 vs BSC0921NDIATMA1 Comparaison
Comparaison détaillée côte à côte de BSC097N06NSATMA1 par Infineon et BSC0921NDIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSC097N06NSATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,38 | $0,68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | 31 A (per channel, package-limited) |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| Température de jonction en fonctionnement | -55C to +150C | — |
| Boîtier / Format | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| Type de montage | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 25V (N-channel) |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 (Unlimited) | 1 (per Infineon OptiMOS family) |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 17 A (per channel) |
| Total Power Dissipation (PD) | — | 1 W |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | — | Ultra-low (OptiMOS 25V family characteristic) |
| Boîtier | — | PG-TISON-8 (8-pin, exposed pad) |
| Température de fonctionnement | — | -55C to +150C (junction) |
| Primary Application | — | Synchronous buck converters, VRMs, POL regulators |