BSC097N06NSATMA1 vs BSC0921NDIATMA1 Comparison
Detailed side-by-side comparison of BSC097N06NSATMA1 by Infineon and BSC0921NDIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0921NDIATMA1
BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
BSC0921NDIATMA1 β ActiveSpecification Comparison
| Parameter | BSC097N06NSATMA1 | BSC0921NDIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc=25C | 46 A | β |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | 31 A (per channel, package-limited) |
| RDS(on) max at VGS=10 V | 9.7 mOhm | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | β |
| Power Dissipation at Ta=25C | 2.5 W | β |
| Power Dissipation at Tc=25C | 36 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package / Case | PG-TDSON-8-6 (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 25V (N-channel) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (Unlimited) | 1 (per Infineon OptiMOS family) |
| Avalanche Rated | Yes (EAS per datasheet) | β |
| Configuration | β | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) | β | 17 A (per channel) |
| Total Power Dissipation (PD) | β | 1 W |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] |
| Gate Charge (Qg) | β | Ultra-low (OptiMOS 25V family characteristic) |
| Output Charge (Qoss) | β | Ultra-low (OptiMOS 25V family characteristic) |
| Package | β | PG-TISON-8 (8-pin, exposed pad) |
| Operating Temperature | β | -55C to +150C (junction) |
| Primary Application | β | Synchronous buck converters, VRMs, POL regulators |