BSC097N06NSATMA1 vs BSC0921NDIATMA1 비교

다음의 상세 나란히 비교: BSC097N06NSATMA1 제조: Infineon 및 BSC0921NDIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC097N06NSATMA1 BSC0921NDIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.38 $0.68
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Part Status Active —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc=25C 46 A —
Continuous Drain Current (ID) at Ta=25C [DATA_NEEDED: ID at Ta=25C PCB-mounted] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM peak value] 31 A (per channel, package-limited)
RDS(on) max at VGS=10 V 9.7 mOhm —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg typ) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 36 W —
동작 접합 온도 -55C to +150C —
패키지 / 케이스 PG-TDSON-8-6 (SuperSO8 5x6 mm) —
실장 유형 Surface Mount Surface Mount
Technology OptiMOS 5 (Trench) OptiMOS 25V (N-channel)
RoHS 상태 Compliant Compliant
MSL 레벨 1 (Unlimited) 1 (per Infineon OptiMOS family)
Avalanche Rated Yes (EAS per datasheet) —
Configuration — Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 17 A (per channel)
Total Power Dissipation (PD) — 1 W
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V/4.5V]
Gate Charge (Qg) — Ultra-low (OptiMOS 25V family characteristic)
Output Charge (Qoss) — Ultra-low (OptiMOS 25V family characteristic)
패키지 — PG-TISON-8 (8-pin, exposed pad)
동작 온도 — -55C to +150C (junction)
Primary Application — Synchronous buck converters, VRMs, POL regulators

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