BSC100N10NSFGATMA1 vs BSC093N15NS5ATMA1 对比
详细并排对比 BSC100N10NSFGATMA1 出自 Infineon 和 BSC093N15NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ 量产中
规格对比
| 参数 | BSC100N10NSFGATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.49 | $1.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 150V |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typical] |
| 封装 | PG-TDSON-8-1 (SuperSO8 5x6) | SuperSO8 5x6 (PG-TDSON-8-7) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (junction) | [DATA_NEEDED: operating temperature range] |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| RoHS 状态 | Compliant | Compliant |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| 无卤 | — | [DATA_NEEDED: halogen free status] |