BSC340N08NS3GATMA1 vs ISC028N03LF2SATMA1 对比

详细并排对比 BSC340N08NS3GATMA1 出自 Infineon 和 ISC028N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon

BSC340N08NS3GATMA1 - 80V 23A N-Ch OptiMOS 3 MOSFET | Infineon

BSC340N08NS3GATMA1 ✓ 量产中
Infineon
ISC028N03LF2SATMA1 ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 ✓ 量产中

规格对比

参数 BSC340N08NS3GATMA1 ISC028N03LF2SATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.81 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC340N08NS3GATMA1 —
Technology OptiMOS 3 (N-Channel Trench) —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc) 23 A —
Continuous Drain Current (ID, Ta) 7 A —
Pulsed Drain Current (IDM) 92 A [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) max @ VGS=10V 34 mOhm —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] 2.35 V
Gate-Source Voltage VGS max +/- 20 V —
Power Dissipation (Tc) 32 W —
Power Dissipation (Ta) 2.5 W —
工作温度范围 -55C to +150C —
封装 PG-TDSON-8-5 (SuperSO8 5x6) PG-TDSON-8-62 (5x6 mm) with exposed pad
安装类型 Surface Mount Surface Mount
MSL 等级 1 1 (per JEDEC J-STD-020)
RoHS / Lead-Free RoHS compliant, lead-free Yes (RoHS compliant)
Channel Type Single N-Channel —
Total Gate Charge Qg typ [DATA_NEEDED: Qg typical] —
Avalanche Rating Repetitive avalanche rated —
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
工作结温 — -55 C to +175 C

数据手册与资源

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